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NXH160T120L2Q2F2SG

NXH160T120L2Q2F2SG
Mfr. #:
NXH160T120L2Q2F2SG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NXH160T120L2Q2F2SG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NXH160T120L2Q2F2SG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Module
RoHS:
Y
Technologie:
Si
Produkt:
IGBT Silizium Module
Aufbau:
Split-T
Kollektor- Emitterspannung VCEO Max:
600 V, 1200 V
Kollektor-Emitter-Sättigungsspannung:
1.47 V, 2.15 V
Kontinuierlicher Kollektorstrom bei 25 C:
100 A, 160 A
Gate-Emitter-Leckstrom:
300 nA, 500 nA
Pd - Verlustleistung:
500 W
Paket / Koffer:
Q2PACK
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 125 C
Verpackung:
Tablett
Marke:
ON Semiconductor
Montageart:
Drücken Sie Fit
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
12
Unterkategorie:
IGBTs
Tags
NXH1, NXH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
Power Integrated Module (PIM), IGBT 1200 V, 160 A and 600 V, 100 A
***ical
Trans IGBT Module N-CH 1200V 181A 500000mW 56-Pin Case 180AK Tray
***et
Transistor IGBT Module N-CH 1.2kV 160A ±20V Screw Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 160A; Transistor Polarity:n Channel; Dc Collector Current:160A; Collector Emitter Saturation Voltage Vce(On):2.15V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
NXH160T120L2Q2F2SG Power Integrated Module
On-Semiconductor NXH160T120L2Q2F2SG Power Integrated Module (PIM) contains a split T-type neutral point clamped three-level inverter. This module consists of two 160A/1200V half-bridge IGBTs with inverse diodes, two 100A/600V neutral point IGBTs with inverse diodes, and two neutral point 120A/600V rectifiers. The NXH160T120L2Q2F2SG module also includes two half-bridge 60A/1200V rectifiers and a Negative Temperature Co-efficient (NTC) thermistor. Typical applications include solar inverters and Uninterruptible Power Supplies (UPS).
Teil # Mfg. Beschreibung Aktie Preis
NXH160T120L2Q2F2SG
DISTI # V99:2348_18980275		ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 12:$124.4000
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SGOS-ND		ON SemiconductorPIM 1200V, 160A SPLIT TNP
RoHS: Compliant
Min Qty: 1
Container: Tray		9In Stock
  • 1:$134.6400
NXH160T120L2Q2F2SG
DISTI # 27057668		ON SemiconductorPIM 1200V, 160A SPLIT TNP12
  • 1:$134.3600
NXH160T120L2Q2F2SG
DISTI # NXH160T120L2Q2F2SG		ON SemiconductorSplit T-Type NPC Power Module 1200 V 160 A IGBT 600 V 100 A IGBT Tray - Trays (Alt: NXH160T120L2Q2F2SG)
RoHS: Compliant
Min Qty: 6000
Container: Tray		Americas - 0
    NXH160T120L2Q2F2SG
    DISTI # 48AC1759    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A,Transistor Polarity:N Channel,DC Collector Current:160A,Collector Emitter Saturation Voltage Vce(on):2.15V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case RoHS Compliant: Yes12
    • 100:$118.2000
    • 50:$121.3100
    • 25:$124.4200
    • 10:$127.1000
    • 5:$133.3100
    • 1:$135.9800
    NXH160T120L2Q2F2SG
    DISTI # 863-NXH160T120Q2F2SG    		ON SemiconductorIGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    RoHS: Compliant    		12
    • 1:$134.6300
    • 5:$131.9900
    • 10:$125.8400
    • 25:$123.1900
    NXH160T120L2Q2F2SG
    DISTI # 1723299    		ON SemiconductorINTELLIGENT POWER MODULE 160A 1200V, PU12
    • 12:£93.9500
    NXH160T120L2Q2F2SG
    DISTI # 2835629    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A
    RoHS: Compliant    		12
    • 1:$202.9000
    NXH160T120L2Q2F2SG
    DISTI # 2835629    		ON SemiconductorIGBT, MODULE, N-CH, 1.2KV, 160A12
    • 10:£89.2900
    • 5:£101.0000
    • 1:£103.0000
    Bild Teil # Beschreibung
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG

    		 IGBT Modules PIM 1200V 160A SPLIT TNP IGBT
    NXH160T120L2Q2F2SG

    Mfr.#: NXH160T120L2Q2F2SG

    OMO.#: OMO-NXH160T120L2Q2F2SG-ON-SEMICONDUCTOR

    		 PIM 1200V, 160A SPLIT TNP
    Verfügbarkeit
    Aktie:
    12
    Auf Bestellung:
    1995
    Menge eingeben:
    Der aktuelle Preis von NXH160T120L2Q2F2SG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    134,63 $
    134,63 $
    5
    131,99 $
    659,95 $
    10
    125,84 $
    1 258,40 $
    25
    123,19 $
    3 079,75 $
    100
    117,03 $
    11 703,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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