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SISH410DN-T1-GE3

SISH410DN-T1-GE3
Mfr. #:
SISH410DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 20V Vds; +/-20V Vgs PowerPAK 1212-8SH
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISH410DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SISH410DN-T1-GE3 DatasheetSISH410DN-T1-GE3 Datasheet (P4-P6)SISH410DN-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SISH410DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
35 A
Rds On - Drain-Source-Widerstand:
4.8 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
41 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
70 A
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
30 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SISH4, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISH410DN-T1-GE3
DISTI # V99:2348_22587810		Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V6000
  • 3000:$0.4211
  • 1000:$0.4662
  • 500:$0.5716
  • 100:$0.6715
  • 10:$0.9777
  • 1:$1.1862
SISH410DN-T1-GE3
DISTI # V36:1790_22587810		Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V0
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		6000In Stock
    • 6000:$0.4354
    • 3000:$0.4572
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		6000In Stock
    • 1000:$0.5045
    • 500:$0.6391
    • 100:$0.7736
    • 10:$0.9920
    • 1:$1.1100
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN PPAK 1212-8SH
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		6000In Stock
    • 1000:$0.5045
    • 500:$0.6391
    • 100:$0.7736
    • 10:$0.9920
    • 1:$1.1100
    SISH410DN-T1-GE3
    DISTI # 30744711    		Vishay IntertechnologiesN-Chanel 20 V (D-S) MOSFET PowerPAK 1212-8SH 300M sh ch , 4.8 m @ 10V m @ 7.5V 6.3 m @ 4.5V6000
    • 6000:$0.4211
    • 3000:$0.4354
    • 1000:$0.4662
    • 500:$0.5716
    • 100:$0.6715
    • 15:$0.9777
    SISH410DN-T1-GE3
    DISTI # SISH410DN-T1-GE3    		Vishay Intertechnologies- Tape and Reel (Alt: SISH410DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.3979
    • 30000:$0.4089
    • 18000:$0.4209
    • 12000:$0.4389
    • 6000:$0.4519
    SISH410DN-T1-GE3
    DISTI # 81AC3495    		Vishay IntertechnologiesN-CHANNEL 20-V (D-S) MOSFET0
    • 10000:$0.3950
    • 6000:$0.4050
    • 4000:$0.4200
    • 2000:$0.4670
    • 1000:$0.5140
    • 1:$0.5350
    SISH410DN-T1-GE3
    DISTI # 99AC9583    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power RoHS Compliant: Yes25
    • 500:$0.5970
    • 250:$0.6460
    • 100:$0.6950
    • 50:$0.7650
    • 25:$0.8350
    • 10:$0.9050
    • 1:$1.1000
    SISH410DN-T1-GE3
    DISTI # 78-SISH410DN-T1-GE3    		Vishay IntertechnologiesMOSFET 20V Vds,+/-20V Vgs PowerPAK 1212-8SH
    RoHS: Compliant    		5246
    • 1:$1.0800
    • 10:$0.8950
    • 100:$0.6870
    • 500:$0.5900
    • 1000:$0.4660
    • 3000:$0.4350
    • 6000:$0.4130
    • 9000:$0.3980
    SISH410DN-T1-GE3
    DISTI # 3019131    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W
    RoHS: Compliant    		25
    • 5000:$0.5800
    • 1000:$0.5920
    • 500:$0.7510
    • 250:$0.8400
    • 100:$0.9260
    • 25:$1.2500
    • 5:$1.3700
    SISH410DN-T1-GE3
    DISTI # 3019131    		Vishay IntertechnologiesMOSFET, N-CH, 20V, 35A, 150DEG C, 52W25
    • 500:£0.4320
    • 250:£0.4690
    • 100:£0.5040
    • 25:£0.6570
    • 5:£0.7320
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von SISH410DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,08 $
    1,08 $
    10
    0,89 $
    8,95 $
    100
    0,69 $
    68,70 $
    500
    0,59 $
    295,00 $
    1000
    0,47 $
    466,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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