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SI3424BDV-T1-GE3

SI3424BDV-T1-GE3
Mfr. #:
SI3424BDV-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 8.0A 2.98W 28mohm @ 10V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI3424BDV-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3424BDV-T1-GE3 DatasheetSI3424BDV-T1-GE3 Datasheet (P4-P6)SI3424BDV-T1-GE3 Datasheet (P7-P9)SI3424BDV-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SI3424BDV-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TSOP-6
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI3
Marke:
Vishay / Siliconix
Produktart:
MOSFET
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Teil # Aliase:
SI3424BDV-GE3
Gewichtseinheit:
0.000705 oz
Tags
SI3424B, SI3424, SI342, SI34, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si3424BDV Series N-Channel 30 V 28 mOhms Surface Mount Power Mosfet - TSOP-6
***et
Trans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
***ark
N CH MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.1W ;RoHS Compliant: Yes
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Teil # Mfg. Beschreibung Aktie Preis
SI3424BDV-T1-GE3
DISTI # V72:2272_09216619		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 25:$0.3975
  • 10:$0.4416
  • 1:$0.5288
SI3424BDV-T1-GE3
DISTI # V36:1790_09216619		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		0
  • 3000000:$0.1841
  • 1500000:$0.1842
  • 300000:$0.1933
  • 30000:$0.2071
  • 3000:$0.2093
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1795
  • 15000:$0.1822
  • 6000:$0.1958
  • 3000:$0.2092
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 8A 6TSOP
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.2364
  • 500:$0.3059
  • 100:$0.3893
  • 10:$0.5210
  • 1:$0.6100
SI3424BDV-T1-GE3
DISTI # 31658403		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R
RoHS: Compliant		3000
  • 3000:$0.1916
  • 1000:$0.2170
  • 500:$0.2703
  • 250:$0.2977
  • 100:$0.3308
  • 34:$0.3975
SI3424BDV-T1-GE3
DISTI # SI3424BDV-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3424BDV-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1731
  • 18000:$0.1779
  • 12000:$0.1829
  • 6000:$0.1907
  • 3000:$0.1965
SI3424BDV-T1-GE3
DISTI # 84R8033		Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:2.1W RoHS Compliant: Yes
RoHS: Compliant		0
    SI3424BDV-T1-GE3
    DISTI # 781-SI3424BDV-GE3    		Vishay IntertechnologiesMOSFET 30V 8.0A 2.98W 28mohm @ 10V
    RoHS: Compliant    		2945
    • 1:$0.6100
    • 10:$0.4920
    • 100:$0.3640
    • 500:$0.2970
    • 1000:$0.2310
    • 3000:$0.2090
    • 6000:$0.1950
    • 9000:$0.1820
    • 24000:$0.1760
    SI3424BDV-T1-GE3Vishay Intertechnologies 620
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1985
      Menge eingeben:
      Der aktuelle Preis von SI3424BDV-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,63 $
      0,63 $
      10
      0,49 $
      4,87 $
      100
      0,36 $
      36,10 $
      500
      0,30 $
      148,50 $
      1000
      0,23 $
      229,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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