OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

TPWR8503NL,L1Q

TPWR8503NL,L1Q
Mfr. #:
TPWR8503NL,L1Q
Hersteller:
Toshiba
Beschreibung:
MOSFET N-CH Mosfet 30V 150A 8DSOP
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
TPWR8503NL,L1Q Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TPWR8503NL,L1Q DatasheetTPWR8503NL,L1Q Datasheet (P4-P6)TPWR8503NL,L1Q Datasheet (P7-P9)TPWR8503NL,L1Q Datasheet (P10)
ECAD Model:
Mehr Informationen:
TPWR8503NL,L1Q Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
DSOP-Advance-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
150 A
Rds On - Drain-Source-Widerstand:
1 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
74 nC
Minimale Betriebstemperatur:
-
Maximale Betriebstemperatur:
-
Pd - Verlustleistung:
142 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
0.73 mm
Länge:
5 mm
Serie:
TPWR8503NL
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Toshiba
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
9.6 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
89 ns
Typische Einschaltverzögerungszeit:
23 ns
Tags
TPWR8503N, TPWR85, TPWR8, TPWR, TPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 30V 150A 8-Pin DSOP
***enic
30V 150A 0.85m¦¸@10V,50A 800mW 2.3V@1mA N Channel DSOP-8 MOSFETs ROHS
***i-Key
MOSFET N-CH 30V 150A 8DSOP
***
TRANS POWER MOSFET
***(Formerly Allied Electronics)
MOSFET; N Ch.; 30V; 160A; 3.1 MOHM; 39 NC QG; D-PAK; Pb-Free
***ure Electronics
Single N-Channel 30 V 3.1 mOhm 39 nC HEXFET® Power Mosfet - TO-252AA
*** Source Electronics
Trans MOSFET N-CH 30V 160A 3-Pin(2+Tab) DPAK Tube / MOSFET N-CH 30V 160A DPAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***nell
MOSFET, N D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0031ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation
*** Stop Electro
Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***ure Electronics
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***et Europe
Trans MOSFET N-CH 30V 185A 8-Pin PQFN T/R
***ment14 APAC
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:185A; Source Voltage Vds:30V; On Resistance
***r Electronics
Power Field-Effect Transistor, 185A I(D), 30V, 0.00123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N-CH, 185A, 30V, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 185A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00096ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.3V; Power Dissipation Pd: 64W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***emi
PowerTrench® MOSFET, N-Channel, 30V, 160A, 3.9mΩ
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***emi
N-Channel PowerTrench® MOSFET 30V, 174A, 1.3mΩ
***et Europe
Transistor MOSFET N-CH 30V 174A 8-Pin Power 33 T/R
***r Electronics
Power Field-Effect Transistor, 174A I(D), 174V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
***nell
MOSFET, N-CH, 30V, 174A, 65W, POWER 33; Transistor Polarity: N Channel; Continuous Drain Current Id: 174A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 65W; Transistor Case Style: Power 33; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for applications where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions.
TPW MOSFETs
Toshiba's TPW MOSFETs features 8-pin DSOP Advance packages for the U-MOSVIII-H and U-MOSIX-H Series MOSFETs. The are designed for high-efficiency DC-DC converters, switching voltage regulators and motor drivers. They deliver high-speed switching, a small gate charge, and low on-resistance.
Teil # Mfg. Beschreibung Aktie Preis
TPWR8503NL,L1Q(M
DISTI # 30611258		Toshiba America Electronic ComponentsTPWR8503NL,L1Q(M300
  • 100:$2.2567
  • 12:$2.2822
TPWR8503NL,L1Q
DISTI # TPWR8503NLL1QCT-ND		Toshiba America Electronic ComponentsMOSFET N-CH 30V 150A 8DSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1946In Stock
  • 1000:$1.4997
  • 500:$1.7782
  • 100:$2.1960
  • 10:$2.6780
  • 1:$3.0000
TPWR8503NL,L1Q
DISTI # TPWR8503NLL1QDKR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 30V 150A 8DSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1946In Stock
  • 1000:$1.4997
  • 500:$1.7782
  • 100:$2.1960
  • 10:$2.6780
  • 1:$3.0000
TPWR8503NL,L1Q
DISTI # TPWR8503NLL1QTR-ND		Toshiba America Electronic ComponentsMOSFET N-CH 30V 150A 8DSOP
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$1.4560
TPWR8503NL,L1Q
DISTI # V36:1790_13897616		Toshiba America Electronic ComponentsMOSFET N-CH 30V 150A 8DSOP0
    TPWR8503NL,L1Q
    DISTI # TPWR8503NL,L1Q    		Toshiba America Electronic ComponentsTrans MOSFET N-CH 30V 150A 8-Pin DSOP - Tape and Reel (Alt: TPWR8503NL,L1Q)
    RoHS: Compliant
    Min Qty: 5000
    Container: Reel    		Americas - 0
    • 50000:$1.0379
    • 30000:$1.0669
    • 20000:$1.1259
    • 10000:$1.1939
    • 5000:$1.2689
    TPWR8503NL,L1Q
    DISTI # 757-TPWR8503NLL1Q    		Toshiba America Electronic ComponentsMOSFET N-CH Mosfet 30V 150A 8DSOP
    RoHS: Compliant    		2207
    • 1:$3.3500
    • 10:$2.6900
    • 100:$2.4500
    • 250:$2.3500
    • 500:$1.9900
    • 1000:$1.6800
    • 2500:$1.5900
    • 5000:$1.5300
    TPWR8503NL,L1QToshiba America Electronic ComponentsMOSFET N-CH Mosfet 30V 150A 8DSOP
    RoHS: Compliant    		Americas -
      TPWR8503NLL1QToshiba America Electronic ComponentsMOSFET POWER MOSFET TRANSISTOR
      RoHS: Compliant      		Americas -
        Bild Teil # Beschreibung
        DAC7678SPW

        Mfr.#: DAC7678SPW

        OMO.#: OMO-DAC7678SPW

        		 Digital to Analog Converters - DAC 12BOctal ChUltra Low Glitch DAC
        RCLAMP0504PATCT

        Mfr.#: RCLAMP0504PATCT

        OMO.#: OMO-RCLAMP0504PATCT

        		 TVS Diodes / ESD Suppressors Low Capacitance TVS Diode Array
        LTM4622AIV#PBF

        Mfr.#: LTM4622AIV#PBF

        OMO.#: OMO-LTM4622AIV-PBF

        		 Switching Voltage Regulators Dual Ultrathin 2.5A or Single 5A Step-Down DC/DC Module Regulator
        EVB-USB5734

        Mfr.#: EVB-USB5734

        OMO.#: OMO-EVB-USB5734

        		 Interface Development Tools EVB-USB5734 USB3.0 Cont Hub Eval Brd
        ECS-130-12-33Q-JEN-TR

        Mfr.#: ECS-130-12-33Q-JEN-TR

        OMO.#: OMO-ECS-130-12-33Q-JEN-TR

        		 Crystals 13.000MHz 12pF AEC-Q200 -40C +85C
        TMP175AQDRQ1

        Mfr.#: TMP175AQDRQ1

        OMO.#: OMO-TMP175AQDRQ1

        		 Board Mount Temperature Sensors Automotive Temp. Sensor with 27 I2C/SMBus Addresses in Industry Standard LM75 Form Factor & Pinout 8-SOIC -40 to 125
        TMP175AQDRQ1

        Mfr.#: TMP175AQDRQ1

        OMO.#: OMO-TMP175AQDRQ1-TEXAS-INSTRUMENTS

        		 SENSOR DIGITAL -40C-125C
        RCLAMP0504PATCT

        Mfr.#: RCLAMP0504PATCT

        OMO.#: OMO-RCLAMP0504PATCT-SEMTECH

        		 TVS DIODE 5V 18V SLP1616P6
        SN75DP159RGZT

        Mfr.#: SN75DP159RGZT

        OMO.#: OMO-SN75DP159RGZT-TEXAS-INSTRUMENTS

        		 Interface - Signal Buffers, Repeaters 6 Gbps DP++ to HDMI Retimer 48-VQFN 0 to 70
        EVB-USB5734

        Mfr.#: EVB-USB5734

        OMO.#: OMO-EVB-USB5734-MICROCHIP-TECHNOLOGY

        		 BOARD EVAL FOR USB5734
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1985
        Menge eingeben:
        Der aktuelle Preis von TPWR8503NL,L1Q dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        2,89 $
        2,89 $
        10
        2,33 $
        23,30 $
        100
        2,10 $
        210,00 $
        500
        1,63 $
        815,00 $
        1000
        1,35 $
        1 350,00 $
        2500
        1,26 $
        3 150,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Top