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F3L150R07W2E3B11BOMA1

F3L150R07W2E3B11BOMA1
Mfr. #:
F3L150R07W2E3B11BOMA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT MODULE VCES 600V 150A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
F3L150R07W2E3B11BOMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
F3L150R0, F3L150, F3L15, F3L1, F3L
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Module N-CH 650V 150A 335000mW 20-Pin EASY2B-2 Tray
***ure Electronics
650 V, 150 A EasyPACK™ 2B 3-level phase leg IGBT module
***et Europe
Trans IGBT Module N-CH 650V 150A 14-pin EASY2B-2
***ronik
IGBT-modul 650V 150A EasyPack2B
***i-Key
IGBT MODULE VCES 600V 150A
***omponent
Infineon power module
***et
LOW POWER EASY
***ark
Igbt, Module, N-Ch, 650V, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, MODULE, N-CH, 650V, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.45V; Power Dissipation Pd:335W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:Module; No. of Pins:-; Operating Temperature Max:150°C; Product Range:-; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, MODULO, CA-N, 650V, 150A; Polarità Transistor:Canale N; Corrente di Collettore CC:150A; Tensione Saturaz Collettore-Emettitore Vce(on):1.45V; Dissipazione di Potenza Pd:335W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:Module; No. di Pin:-; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
EasyPACK 2B 650V 3-level phase leg IGBT module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode, NTC and PressFIT Contact Technology | Summary of Features: Increased blocking voltage capability to 650V; Low inductive design; Low Switching Losses; Low V(CEsat); Al(2)O(3) Substrate with Low Thermal Resistance; Compact Design; PressFIT Contact Technology; Rugged mounting due to integrated mounting clamps | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility | Target Applications: drives; solar; ups
Teil # Mfg. Beschreibung Aktie Preis
F3L150R07W2E3B11BOMA1
DISTI # V99:2348_17558352		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 100:$59.1100
  • 25:$64.0000
  • 10:$71.1100
  • 1:$79.0100
F3L150R07W2E3B11BOMA1
DISTI # F3L150R07W2E3B11BOMA1-ND		Infineon Technologies AGIGBT MODULE VCES 600V 150A
RoHS: Not compliant
Min Qty: 15
Container: Bulk		Temporarily Out of Stock
  • 15:$65.2260
F3L150R07W2E3B11BOMA1
DISTI # 30177381		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 15:$56.3880
F3L150R07W2E3B11BOMA1
DISTI # 32347530		Infineon Technologies AGTrans IGBT Module N-CH 650V 150A 335000mW 20-Pin Tray
RoHS: Compliant		15
  • 100:$59.1100
  • 25:$64.0000
  • 10:$71.1100
  • 1:$79.0100
F3L150R07W2E3B11BOMA1
DISTI # F3L150R07W2E3B11BOMA1		Infineon Technologies AGLOW POWER EASY - Trays (Alt: F3L150R07W2E3B11BOMA1)
RoHS: Compliant
Min Qty: 15
Container: Tray		Americas - 0
    F3L150R07W2E3_B11
    DISTI # 641-F3L150R07W2E3B11    		Infineon Technologies AGIGBT Modules IGBT MODULES 650V 150A54
    • 1:$68.6600
    • 5:$67.3900
    • 10:$65.6500
    • 25:$64.3600
    F3L150R07W2E3B11BOMA1
    DISTI # 2709947    		Infineon Technologies AGIGBT, MODULE, N-CH, 650V, 150A0
    • 50:£49.2700
    • 10:£50.3200
    • 5:£51.3700
    • 1:£52.4200
    F3L150R07W2E3B11BOMA1
    DISTI # 2709947    		Infineon Technologies AGIGBT, MODULE, N-CH, 650V, 150A
    RoHS: Compliant    		0
    • 5:$92.3200
    • 2:$95.6200
    • 1:$99.1700
    Bild Teil # Beschreibung
    F3L150R07W2E3_B11

    Mfr.#: F3L150R07W2E3_B11

    OMO.#: OMO-F3L150R07W2E3-B11

    		 IGBT Modules IGBT MODULES 650V 150A
    F3L150R07W2E3B11BOMA1

    Mfr.#: F3L150R07W2E3B11BOMA1

    OMO.#: OMO-F3L150R07W2E3B11BOMA1-INFINEON-TECHNOLOGIES

    		 IGBT MODULE VCES 600V 150A
    F3L150R07W2E3-B11

    Mfr.#: F3L150R07W2E3-B11

    OMO.#: OMO-F3L150R07W2E3-B11-1190

    		 Neu und Original
    F3L150R07W2E3_B11 , 1KSM

    Mfr.#: F3L150R07W2E3_B11 , 1KSM

    OMO.#: OMO-F3L150R07W2E3-B11-1KSM-1190

    		 Neu und Original
    F3L150R07W2E3_B11-ENG

    Mfr.#: F3L150R07W2E3_B11-ENG

    OMO.#: OMO-F3L150R07W2E3-B11-ENG-1190

    		 Neu und Original
    F3L150R07W2E3_B11

    Mfr.#: F3L150R07W2E3_B11

    OMO.#: OMO-F3L150R07W2E3-B11-125

    		 IGBT Modules IGBT MODULES 650V 150A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von F3L150R07W2E3B11BOMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    77,56 $
    77,56 $
    10
    73,68 $
    736,79 $
    100
    69,80 $
    6 980,08 $
    500
    65,92 $
    32 961,50 $
    1000
    62,05 $
    62 045,20 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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