OMO ElectronicOMO Electronic
Expand menu
0 Wagen

SDTC124EET1G

SDTC124EET1G
Mfr. #:
SDTC124EET1G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT SS SC75 BR XSTR NPN 50V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SDTC124EET1G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SDTC124EET1G DatasheetSDTC124EET1G Datasheet (P4-P6)SDTC124EET1G Datasheet (P7-P9)SDTC124EET1G Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SC-75-3
Polarität des Transistors:
NPN
Kollektor- Emitterspannung VCEO Max:
50 V
Serie:
DTC124EE
Verpackung:
Spule
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
100 mA
Pd - Verlustleistung:
200 mW
Produktart:
BJTs - Bipolartransistoren
Qualifikation:
AEC-Q101
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Tags
SDTC, SDT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***ical
Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R
***emi
NPN Bipolar Digital Transistor (BRT)
***el Electronic
RF Transceiver Modules 3 (168 Hours) Module Surface Mount Bluetooth -40°C ~ 85°C 3V ~ 3.6V SPI, UART, USB CLASS 1 BLTOOTH 2.1+EDR MODULE
***ark
Rf Transistor, Npn, 50V, 0.1A, Sc-75; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
*** Electronics
Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 22kO
***p One Stop Global
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R
***emi
NPN Bipolar Digital Transistor (BRT)
***ment14 APAC
Transistor, NPN, 50V, 0.1A, SC-59; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
***nell
TRANS, NPN, 50V, 0.1A, SC-59; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***th Star Micro
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
***el Electronic
STMICROELECTRONICS 2STC5242 Bipolar (BJT) Single Transistor, NPN, 230 V, 30 MHz, 130 W, 8 A, 80
***(Formerly Allied Electronics)
SMUN5212T1G NPN Digital Transistor; 100mA 50 V 22 kOhm; Ratio Of 1; 3-Pin SC-70
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon
***ical
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R
***emi
NPN Bipolar Digital Transistor (BRT)
***ark
Rf Transistor, Npn, 50V, 0.1A, Sc-70; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:3 Pin
***r Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
***p One Stop Global
Trans Digital BJT NPN 50V 100mA 310mW Automotive 3-Pin SC-70 T/R
***ure Electronics
MUN5212 Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70-3
***emi
NPN Bipolar Digital Transistor (BRT)
***nell
TRANS, AEC-Q101, NPN, 50V, 0.1A, SOT-323; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 22kohm; Resistor Ratio, R1 / R2: 1(Ratio); RF Transistor Case: SOT-323; No. of Pins: 3 Pin; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ark
Brt Transistor, 50V, 22K/22Kohm, Sc70; Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes
***th Star Micro
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
***ical
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SC-75 T/R
***peria
PDTC144W series - NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm
***ark
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:22kohm; Resistor Ratio, R1/R2:0.47 ;RoHS Compliant: Yes
***nell
TRANS NPN W/RES SOT-416; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 60hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 150mV; Current Ic Continuous a Max: 10mA; Hfe Min: 60; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: General Purpose
***ical
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
***et
Trans GP BJT NPN 50V 0.1A 3-Pin USM Embossed T/R
***ark
X34 Pb-F Usm Pln (Lf) Transistor Pd=100Mw F=1Mhz
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***et
Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R
***i-Key
TRANS PREBIAS NPN 50V 0.1A USM
***
TRANS BI-POLAR 50V
Teil # Mfg. Beschreibung Aktie Preis
SDTC124EET1G
DISTI # SDTC124EET1G-ND		ON SemiconductorTRANS PREBIAS NPN 0.2W SC75
RoHS: Compliant
Min Qty: 6000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.0594
SDTC124EET1G
DISTI # SDTC124EET1G		ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-416 T/R (Alt: SDTC124EET1G)
RoHS: Compliant
Min Qty: 12000
Container: Tape and Reel		Asia - 15000
  • 3000:$0.0513
  • 6000:$0.0493
  • 9000:$0.0475
  • 15000:$0.0458
  • 30000:$0.0442
  • 75000:$0.0428
  • 150000:$0.0420
SDTC124EET1G
DISTI # SDTC124EET1G		ON SemiconductorTrans Digital BJT NPN 50V 100mA 3-Pin SOT-416 T/R - Tape and Reel (Alt: SDTC124EET1G)
RoHS: Compliant
Min Qty: 12000
Container: Reel		Americas - 0
  • 12000:$0.0370
  • 18000:$0.0367
  • 30000:$0.0363
  • 60000:$0.0358
  • 120000:$0.0349
SDTC124EET1G
DISTI # 863-SDTC124EET1G		ON SemiconductorBipolar Transistors - BJT SS SC75 BR XSTR NPN 50V
RoHS: Compliant		11000
  • 1:$0.3800
  • 10:$0.2550
  • 100:$0.1070
  • 1000:$0.0730
  • 3000:$0.0570
  • 9000:$0.0490
  • 24000:$0.0460
  • 45000:$0.0430
  • 99000:$0.0370
SDTC124EET1GON Semiconductor 
RoHS: Not Compliant		12000
  • 100:$0.0400
  • 500:$0.0400
  • 1000:$0.0400
  • 1:$0.0500
  • 25:$0.0500
Bild Teil # Beschreibung
SZMMBZ18VALT1G

Mfr.#: SZMMBZ18VALT1G

OMO.#: OMO-SZMMBZ18VALT1G

 TVS Diodes / ESD Suppressors ZEN REG .225W SPCL
BTS50121EKBXUMA1

Mfr.#: BTS50121EKBXUMA1

OMO.#: OMO-BTS50121EKBXUMA1

 Power Switch ICs - Power Distribution PROFET
RK73H1JTTD2211F

Mfr.#: RK73H1JTTD2211F

OMO.#: OMO-RK73H1JTTD2211F-1090

 Thick Film Resistors - SMD 1/10watts 2.21Kohms
RK73H1ETTP1503F

Mfr.#: RK73H1ETTP1503F

OMO.#: OMO-RK73H1ETTP1503F-1090

 Thick Film Resistors - SMD 1/16watt 150Kohms 1%
BTS50121EKBXUMA1

Mfr.#: BTS50121EKBXUMA1

OMO.#: OMO-BTS50121EKBXUMA1-INFINEON-TECHNOLOGIES

 Power Switch ICs - Power Distribution PROFET
SZMMBZ18VALT1G

Mfr.#: SZMMBZ18VALT1G

OMO.#: OMO-SZMMBZ18VALT1G-ON-SEMICONDUCTOR

 TVS Diode Arrays ZEN REG .225W SPCL
Verfügbarkeit
Aktie:
11
Auf Bestellung:
1994
Menge eingeben:
Der aktuelle Preis von SDTC124EET1G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,38 $
0,38 $
10
0,26 $
2,55 $
100
0,11 $
10,70 $
1000
0,07 $
73,00 $
Beginnen mit
Top