OMO ElectronicOMO Electronic
Expand menu
0 Wagen

SI7716ADN-T1-GE3

SI7716ADN-T1-GE3
Mfr. #:
SI7716ADN-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 30V 16A 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7716ADN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI7716ADN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SI7716ADN-GE3
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR 1212-8
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR 1212-8
Aufbau
Single Quad Drain Triple Source
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
27.7W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
846pF @ 15V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
16A (Tc)
Rds-On-Max-Id-Vgs
13.5 mOhm @ 10A, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Lade-Qg-Vgs
23nC @ 10V
Pd-Verlustleistung
3.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
10 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
16 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
13.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
14 ns
Typische-Einschaltverzögerungszeit
15 ns
Vorwärts-Transkonduktanz-Min
24 S
Kanal-Modus
Erweiterung
Tags
SI7716ADN-T1-G, SI7716ADN-T1, SI7716ADN-T, SI7716AD, SI7716A, SI7716, SI771, SI77, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 0.0135 Ohms Surface Mount Power Mosfet - PowerPAK-1212-8
***ark
Mosfet, N Channel, 30V, 16A, Powerpak 1212-8; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:16A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:surface Mount; No. Of Pins:8Pins Rohs Compliant: No
***ment14 APAC
MOSFET,N CH,30V,16A,POWERPAK8; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Power Dissipation Pd:3.5W; Voltage Vgs Max:20V
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Teil # Mfg. Beschreibung Aktie Preis
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3000In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3000In Stock
  • 1000:$0.4966
  • 500:$0.6290
  • 100:$0.8111
  • 10:$1.0260
  • 1:$1.1600
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 16A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.4500
SI7716ADN-T1-GE3
DISTI # SI7716ADN-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI7716ADN-T1-GE3
    DISTI # SI7716ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7716ADN-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.4399
    • 6000:$0.4389
    • 12000:$0.4369
    • 18000:$0.4359
    • 30000:$0.4349
    SI7716ADN-T1-GE3
    DISTI # SI7716ADN-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 3000:€0.8369
    • 6000:€0.6009
    • 12000:€0.4869
    • 18000:€0.4309
    • 30000:€0.4119
    SI7716ADN-T1-GE3
    DISTI # 18X0024    		Vishay IntertechnologiesMOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V , RoHS Compliant: Yes0
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9580
    • 50:$0.8760
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    SI7716ADN-T1-GE3.
    DISTI # 28AC2175    		Vishay IntertechnologiesN-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO0
    • 1:$0.5060
    • 3000:$0.5030
    SI7716ADN-T1-GE3
    DISTI # 781-SI7716ADN-T1-GE3    		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant    		3564
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    • 3000:$0.5030
    • 6000:$0.4780
    • 9000:$0.4670
    SI7716ADN-T1-GE3Vishay Siliconix 6012
      SI7716ADN-T1-GE3Vishay Intertechnologies 50
        SI7716ADNT1GE3Vishay Intertechnologies 
        RoHS: Compliant        		Europe - 3000
          SI7716ADN-T1-GE3
          DISTI # C1S803601064529          		Vishay IntertechnologiesTrans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 EP T/R
          RoHS: Compliant          		2998
          • 3000:$0.4952
          SI7716ADN-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs PowerPAK 1212-8
          RoHS: Compliant          		Americas -
            SI7716ADN-T1-GE3
            DISTI # 2478976            		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 16A POWERPAK, FULL REEL
            RoHS: Compliant            		0
            • 3000:$0.7370
            SI7716ADN-T1-GE3
            DISTI # 1840425            		Vishay IntertechnologiesMOSFET,N CH,30V,16A,POWERPAK8
            RoHS: Compliant            		0
            • 5:£0.5780
            • 25:£0.5690
            • 100:£0.5610
            • 250:£0.5490
            • 500:£0.5290
            Bild Teil # Beschreibung
            SI7716ADN-T1-GE3

            Mfr.#: SI7716ADN-T1-GE3

            OMO.#: OMO-SI7716ADN-T1-GE3

            		 MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
            SI7716ADN

            Mfr.#: SI7716ADN

            OMO.#: OMO-SI7716ADN-1190

            		 Neu und Original
            SI7716ADN-T1-E3

            Mfr.#: SI7716ADN-T1-E3

            OMO.#: OMO-SI7716ADN-T1-E3-1190

            		 Neu und Original
            SI7716ADN-T1-GE3

            Mfr.#: SI7716ADN-T1-GE3

            OMO.#: OMO-SI7716ADN-T1-GE3-VISHAY

            		 MOSFET N-CH 30V 16A 1212-8
            SI7716ADN-T1-GE3..

            Mfr.#: SI7716ADN-T1-GE3..

            OMO.#: OMO-SI7716ADN-T1-GE3--1190

            		 Neu und Original
            SI7716ADN-T1-GE3CT

            Mfr.#: SI7716ADN-T1-GE3CT

            OMO.#: OMO-SI7716ADN-T1-GE3CT-1190

            		 Neu und Original
            SI7716ADN-TI-GE3

            Mfr.#: SI7716ADN-TI-GE3

            OMO.#: OMO-SI7716ADN-TI-GE3-1190

            		 Neu und Original
            SI7716ADNT1GE3

            Mfr.#: SI7716ADNT1GE3

            OMO.#: OMO-SI7716ADNT1GE3-1190

            		 Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
            Verfügbarkeit
            Aktie:
            Available
            Auf Bestellung:
            3000
            Menge eingeben:
            Der aktuelle Preis von SI7716ADN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
            Referenzpreis (USD)
            Menge
            Stückpreis
            ext. Preis
            1
            0,59 $
            0,59 $
            10
            0,56 $
            5,60 $
            100
            0,53 $
            53,02 $
            500
            0,50 $
            250,35 $
            1000
            0,47 $
            471,30 $
            Beginnen mit
            Top