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2SK3490-TD-E

2SK3490-TD-E
Mfr. #:
2SK3490-TD-E
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK3490-TD-E Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
2SK349, 2SK34, 2SK3, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount
***i-Key Marketplace
N-CHANNEL SILICON MOSFET FOR GEN
***nell
MOSFET, N CH 30V 8A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:8A; On State Resistance:0.039ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:2.6V; Case Style:PCP; Termination Type:SMD; Power Dissipation:3.5W; Transistor Case Style:PCP
***(Formerly Allied Electronics)
MOSFET, Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -7A,SO-8,PD 1.5W,VGS+/-20V,-55C
***ure Electronics
Si4435DDY Series 30 V 0.024 Ohm Surface Mount P-Channel Mosfet - SOIC-8
***enic
30V 11.4A 2.5W 24m´Î@10V9.1A 3V@250Ã×A P Channel SOIC-8_150mil MOSFETs ROHS
***el Electronic
MICROCHIP - 24AA025E48-I/SN - EEPROM, einzigartige EUI-48™-Node-Adresse, 2 Kbit, 2 Blöcke (128 x 8 Bit), Seriell I2C (2-Draht)
***ark
P Channel Mosfet,-30V,-8.1A, Soic-8; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0195Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
***ark
Mosfet Transistor, P Channel, -10 A, -30 V, 20 Mohm, 10 V, -1 V
***itex
Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8
***ure Electronics
Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***nell
MOSFET, P, -30V, -10A, SO-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.02ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -1V; Power D
*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ure Electronics
Single P-Channel 30 V 13.3 mOhm 38 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -30V, -9.2A, 19.4 MOHM, 25VGS, SO-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-9.2A; Source Voltage Vds:-30V; On Resistance
***ineon
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
***roFlash
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, P-CH, -30V, -9.2A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -9.2A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.0133ohm; Rds(on) Test Voltage Vgs: -20V; Threshold Voltage Vgs: -1.8V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 30 V 0.022 Ohm 57 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC Tube
***roFlash
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
N CHANNEL MOSFET, 30V, 8.5A, SOIC; Trans; N CHANNEL MOSFET, 30V, 8.5A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:8.5A; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; No. of Pins:8
***ure Electronics
N-Channel 30 V 14 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
***emi
N-Channel PowerTrench® MOSFET 30V, 10.2A, 14mΩ
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
***Yang
Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled
***emi
P-Channel PowerTrench® MOSFET -30V, -8.8A, 20mΩ
***ure Electronics
P-Channel 30 V 20 mO Surface Mount PowerTrench Mosfet - SOIC-8
***-Wing Technology
ON SEMICONDUCTOR - FDS4435BZ - P CHANNEL MOSFET, -30V, 8.8A, SOIC
***rchild Semiconductor
This P–Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Teil # Mfg. Beschreibung Aktie Preis
2SK3490-TD-E
DISTI # 2SK3490-TD-E		ON SemiconductorSilicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E)
RoHS: Not Compliant
Min Qty: 834
Container: Bulk		Americas - 0
  • 8340:$0.3699
  • 4170:$0.3789
  • 2502:$0.3839
  • 1668:$0.3889
  • 834:$0.3919
2SK3490-TD-ESANYO Semiconductor Co Ltd 
RoHS: Not Compliant		126
  • 1000:$0.4000
  • 500:$0.4200
  • 100:$0.4300
  • 25:$0.4500
  • 1:$0.4900
Bild Teil # Beschreibung
2SK3490-TD-E

Mfr.#: 2SK3490-TD-E

OMO.#: OMO-2SK3490-TD-E-1190

 Silicon MOSFET N Channel Enhancement 30V 8A 3-Pin Surface Mount - Bulk (Alt: 2SK3490-TD-E)
2SK3491

Mfr.#: 2SK3491

OMO.#: OMO-2SK3491-1190

 Neu und Original
2SK3491,K3491

Mfr.#: 2SK3491,K3491

OMO.#: OMO-2SK3491-K3491-1190

 Neu und Original
2SK3491-E

Mfr.#: 2SK3491-E

OMO.#: OMO-2SK3491-E-1190

 - Bulk (Alt: 2SK3491-E)
2SK3491-TL-E

Mfr.#: 2SK3491-TL-E

OMO.#: OMO-2SK3491-TL-E-1190

 - Bulk (Alt: 2SK3491-TL-E)
2SK3491-TLD

Mfr.#: 2SK3491-TLD

OMO.#: OMO-2SK3491-TLD-1190

 Neu und Original
2SK3495-AZ

Mfr.#: 2SK3495-AZ

OMO.#: OMO-2SK3495-AZ-1190

 - Bulk (Alt: 2SK3495-AZ)
2SK3497(F)

Mfr.#: 2SK3497(F)

OMO.#: OMO-2SK3497-F--1190

 Neu und Original
2SK3498

Mfr.#: 2SK3498

OMO.#: OMO-2SK3498-1190

 Neu und Original
2SK3499

Mfr.#: 2SK3499

OMO.#: OMO-2SK3499-1190

 Neu und Original
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von 2SK3490-TD-E dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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