IKD04N60RATMA1

IKD04N60RATMA1
Mfr. #:
IKD04N60RATMA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT w/ INTG DIODE 600V 8A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKD04N60RATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-252-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kollektor-Emitter-Sättigungsspannung:
1.65 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
8 A
Pd - Verlustleistung:
75 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
RC
Verpackung:
Spule
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
2500
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IKD04N60R SP000964626
Tags
IKD04N60RA, IKD04N60R, IKD04N, IKD04, IKD0, IKD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 8A 75000mW Automotive 3-Pin(2+Tab) DPAK T/R
***ineon SCT
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market, PG-TO252-3, RoHS
***nell
IGBT+ DIODE,600V,4A,TO252; DC Collector Current: 4A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 75W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; O
***ineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives. | Summary of Features: Optimized parameters for up to 20% lower switching losses; Operating range of DC to 30kHz; Max junction temperature 175C; Short circuit capability of 5s; Very tight parameter distribution; Best in class current versus package size performance; Smooth switching performance leading to low EMI levels | Benefits: Excellent cost/performance for hard switching applications; Outstanding temperature stability; Very good EMI behavior; Up to 60% space saving on the PCB; Higher reliability due to monolithically integrated IGBT & diode due to less thermal cycling during switching | Target Applications: Fridge compressors; Pumps & Drives; Fans; Home Appliance; Industrial drives; Air Conditioner
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
*** Electronic Components
IGBT Transistors Dis High Perf IGBT
***inecomponents.com
Discrete, High Performance IGBT
***rchild Semiconductor
Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
***-Wing Technology
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
***i-Key
IGBT 600V 6A 30W DPAK
*** Electronic Components
IGBT Transistors 600V/3A
***ser
IGBTs 600V/3A
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 220pF 100volts C0G +/-5% Hi Rel
***r Electronics
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 3.0 A
*** Electronic Components
IGBT Transistors N-Ch 600 Volt 3.0 A
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
***ical
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
***(Formerly Allied Electronics)
IGBT, N-Channel, 600V, 8.5A, D-Pak TO-252AA | Infineon IRG4RC10KDTRPBF
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
***-Wing Technology
Tape & Reel (TR) Surface Mount ROHS3Compliant IGBT Transistor 2.6V @ 15V 5A 8.5A 38W 28ns
***ical
Trans IGBT Chip N-CH 600V 8.5A 38000mW 3-Pin(2+Tab) DPAK T/R
***(Formerly Allied Electronics)
600V ULTRAFAST 8-60 KHZ COPACK IGBT IN A D-PAK PACKAGE | Infineon IRG4RC10UDPBF
***nell
IGBT, D-PAK; DC Collector Current: 8.5A; Collector Emitter Saturation Voltage Vce(on): 2.6V; Power Dissipation Pd: 38W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Ic Continuous a Max: 5A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Power Dissipation Max: 38W; Pulsed Current Icm: 34A; Rise Time: 16ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V
Teil # Mfg. Beschreibung Aktie Preis
IKD04N60RATMA1
DISTI # V72:2272_06384328
Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2473
  • 1000:$0.4414
  • 500:$0.5326
  • 250:$0.6085
  • 100:$0.6147
  • 25:$0.8064
  • 10:$0.8959
  • 1:$1.0580
IKD04N60RATMA1
DISTI # V36:1790_06384328
Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
0
  • 2500000:$0.4214
  • 1250000:$0.4218
  • 250000:$0.4564
  • 25000:$0.5209
  • 2500:$0.5319
IKD04N60RATMA1
DISTI # IKD04N60RATMA1CT-ND
Infineon Technologies AGIGBT 600V 8A TO252-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    IKD04N60RATMA1
    DISTI # IKD04N60RATMA1DKR-ND
    Infineon Technologies AGIGBT 600V 8A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1TR-ND
      Infineon Technologies AGIGBT 600V 8A TO252-3
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 2500:$0.5319
      IKD04N60RATMA1
      DISTI # 26195432
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A Automotive 3-Pin(2+Tab) DPAK T/R
      RoHS: Compliant
      2473
      • 14:$1.0580
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Bulk (Alt: IKD04N60RATMA1)
      Min Qty: 807
      Container: Bulk
      Americas - 0
      • 8070:$0.3929
      • 4035:$0.4009
      • 2421:$0.4139
      • 1614:$0.4299
      • 807:$0.4459
      IKD04N60RATMA1
      DISTI # IKD04N60RATMA1
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R - Tape and Reel (Alt: IKD04N60RATMA1)
      RoHS: Compliant
      Min Qty: 2500
      Container: Reel
      Americas - 0
      • 25000:$0.4589
      • 15000:$0.4679
      • 10000:$0.4839
      • 5000:$0.5019
      • 2500:$0.5209
      IKD04N60RATMA1
      DISTI # SP000964626
      Infineon Technologies AGTrans IGBT Chip N-CH 600V 8A 3-Pin TO-252 T/R (Alt: SP000964626)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel
      Europe - 0
      • 25000:€0.4049
      • 15000:€0.4359
      • 10000:€0.4729
      • 5000:€0.5159
      • 2500:€0.6299
      IKD04N60RATMA1
      DISTI # 726-IKD04N60RATMA1
      Infineon Technologies AGIGBT Transistors IGBT w/ INTG DIODE 600V 8A
      RoHS: Compliant
      1574
      • 1:$0.9700
      • 10:$0.8280
      • 100:$0.6360
      • 500:$0.5620
      • 1000:$0.4440
      • 2500:$0.3940
      • 10000:$0.3790
      IKD04N60RATMA1Infineon Technologies AGInfineon Discrete IGBT without Anti-Parallel DiodeIKD04N60RA - TO252-3
      RoHS: Not Compliant
      2319
      • 1000:$0.4100
      • 500:$0.4300
      • 100:$0.4500
      • 25:$0.4700
      • 1:$0.5000
      IKD04N60RATMA1
      DISTI # IKD04N60R
      Infineon Technologies AG600V 8A 75W TO252
      RoHS: Compliant
      0
      • 5:€1.3200
      • 50:€0.7200
      • 200:€0.4200
      • 500:€0.4000
      Bild Teil # Beschreibung
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      LED Lighting Drivers LED Linear Driver
      TPS92611QDGNRQ1

      Mfr.#: TPS92611QDGNRQ1

      OMO.#: OMO-TPS92611QDGNRQ1

      LED Lighting Drivers LED DRIVER
      BZG03C150G

      Mfr.#: BZG03C150G

      OMO.#: OMO-BZG03C150G

      Zener Diodes ZR SURF MT OVR TRANS SUPP
      IPN60R3K4CEATMA1

      Mfr.#: IPN60R3K4CEATMA1

      OMO.#: OMO-IPN60R3K4CEATMA1

      MOSFET CONSUMER
      STPS1L40ZF

      Mfr.#: STPS1L40ZF

      OMO.#: OMO-STPS1L40ZF

      Schottky Diodes & Rectifiers Low Drop Power Schottky Rectifier
      TPS92611QDGNRQ1

      Mfr.#: TPS92611QDGNRQ1

      OMO.#: OMO-TPS92611QDGNRQ1-TEXAS-INSTRUMENTS

      Single Channel Linear LED Drive
      L1SP-DRD0002800000

      Mfr.#: L1SP-DRD0002800000

      OMO.#: OMO-L1SP-DRD0002800000-LUMILEDS

      2835 SunPlus Deep Red
      L1SP-FRD0002800000

      Mfr.#: L1SP-FRD0002800000

      OMO.#: OMO-L1SP-FRD0002800000-LUMILEDS

      2835 SunPlus Far Red
      STPS1L40ZF

      Mfr.#: STPS1L40ZF

      OMO.#: OMO-STPS1L40ZF-STMICROELECTRONICS

      DIODE SCHOTTKY 40V 1A SOD123F
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1984
      Menge eingeben:
      Der aktuelle Preis von IKD04N60RATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,97 $
      0,97 $
      10
      0,83 $
      8,28 $
      100
      0,64 $
      63,60 $
      500
      0,56 $
      281,00 $
      1000
      0,44 $
      444,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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