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SCT3030ALGC11

SCT3030ALGC11
Mfr. #:
SCT3030ALGC11
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SCT3030ALGC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SCT3030ALGC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
SiC
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247N-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
70 A
Rds On - Drain-Source-Widerstand:
30 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.7 V
Vgs - Gate-Source-Spannung:
- 4 V, 22 V
Qg - Gate-Ladung:
104 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
262 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
SCT3x
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
9.4 S
Abfallzeit:
27 ns
Produktart:
MOSFET
Anstiegszeit:
41 ns
Werkspackungsmenge:
450
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
22 ns
Teil # Aliase:
SCT3030AL
Gewichtseinheit:
0.211644 oz
Tags
SCT303, SCT30, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
***ical
Trans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube
***ark
Mosfet, N-Ch, 650V, 70A, To-247N-3; Transistor Polarity:n Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:18V; Threshold Voltage Vgs:5.6V Rohs Compliant: Yes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
Industrial Product Solutions
ROHM Industrial Product Solutions supply a quality lineup of products from passive devices and discretes to ICs and modules, providing total solutions at the system level. The Industrial Product Solutions have achieved high quality, technological capability, and a stable supply of products (over 10 years) creating innovative solutions in a highly integrated production system. These products meet the rapidly evolving needs of the industrial equipment market. ROHM continues to leverage its strengths providing optimized solutions tailored to customer sets.
Teil # Mfg. Beschreibung Aktie Preis
SCT3030ALGC11
DISTI # 32733236		ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube806
  • 1:$30.7500
SCT3030ALGC11
DISTI # 32370958		ROHM SemiconductorTrans MOSFET N-CH SiC 650V 70A 3-Pin(3+Tab) TO-247N Tube60
  • 30:$27.5312
SCT3030ALGC11
DISTI # SCT3030ALGC11-ND		ROHM SemiconductorMOSFET NCH 650V 70A TO247N
RoHS: Compliant
Min Qty: 1
Container: Tube		2706In Stock
  • 510:$17.6640
  • 120:$19.4560
  • 30:$21.7600
  • 10:$22.7840
  • 1:$24.7000
SCT3030ALGC11
DISTI # C1S625901667552		ROHM SemiconductorMOSFETs806
  • 200:$15.4000
  • 100:$15.8000
  • 50:$16.3000
  • 10:$18.4000
  • 5:$19.9000
  • 1:$24.6000
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€22.8900
  • 500:€24.4900
  • 100:€25.3900
  • 50:€26.3900
  • 25:€27.4900
  • 10:€28.5900
  • 1:€31.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube - Rail/Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$16.3900
  • 2700:$16.7900
  • 1800:$17.7900
  • 900:$18.8900
  • 450:$20.1900
SCT3030ALGC11
DISTI # SCT3030ALGC11		ROHM SemiconductorTrans MOSFET N 650V 70A 3-Pin TO-247N Tube (Alt: SCT3030ALGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Asia - 0
    SCT3030ALGC11
    DISTI # 05AC9460    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N-3,Transistor Polarity:N Channel,Continuous Drain Current Id:70A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V RoHS Compliant: Yes20
    • 250:$23.8100
    • 100:$24.2400
    • 50:$24.7100
    • 25:$25.5200
    • 10:$26.4200
    • 5:$27.4300
    • 1:$28.4700
    SCT3030ALGC11ROHM SemiconductorSCT3030AL Series 650 V 70 A 39 mOhm N-Channel SiC Power Mosfet - TO-247N
    RoHS: Compliant    		90Tube
    • 30:$19.5800
    SCT3030ALGC11
    DISTI # 755-SCT3030ALGC11    		ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant    		568
    • 1:$24.7100
    • 5:$24.4500
    • 10:$22.7900
    • 25:$21.7700
    • 100:$19.4600
    • 250:$18.5600
    SCT3030ALGC11ROHM Semiconductor 58
    • 35:$27.4210
    • 17:$29.0340
    • 1:$32.2600
    SCT3030ALGC11
    DISTI # TMOSP11652    		ROHM SemiconductorSiC-N 650V 70A 39mOhmTO247-3
    RoHS: Compliant    		Stock DE - 4080Stock HK - 0Stock US - 0
    • 30:$38.5000
    • 60:$36.3000
    • 90:$34.1000
    • 120:$29.7000
    SCT3030ALGC11
    DISTI # 2678783    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N6
    • 100:£21.0200
    • 50:£22.5200
    • 10:£24.4000
    • 5:£27.2100
    • 1:£32.8400
    SCT3030ALGC11
    DISTI # 2678783    		ROHM SemiconductorMOSFET, N-CH, 650V, 70A, TO-247N
    RoHS: Compliant    		10
    • 1:$44.8500
    SCT3030ALGC11ROHM SemiconductorRoHS(ship within 1day)73
    • 1:$18.7500
    • 10:$17.2500
    • 50:$16.8800
    • 100:$16.6300
    • 500:$16.2500
    • 1000:$16.1300
    SCT3030ALGC11ROHM SemiconductorMOSFET N-Ch 650V SiC 70A 30mOhm TrenchMOS
    RoHS: Compliant    		Americas - 180
    • 30:$21.4600
    • 60:$21.1200
    • 90:$20.6300
    • 120:$19.3800
    SCT3030ALGC11
    DISTI # XSFP00000114818    		ROHM SEMICONDUCTOR 
    RoHS: Compliant    		60 in Stock0 on Order
    • 60:$26.1100
    • 30:$27.9700
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    Verfügbarkeit
    Aktie:
    514
    Auf Bestellung:
    2497
    Menge eingeben:
    Der aktuelle Preis von SCT3030ALGC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    24,71 $
    24,71 $
    5
    24,45 $
    122,25 $
    10
    22,79 $
    227,90 $
    25
    21,77 $
    544,25 $
    100
    19,46 $
    1 946,00 $
    250
    18,56 $
    4 640,00 $
    500
    17,67 $
    8 835,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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