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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| 2SK1567-E | Renesas Electronics Corporation | Power Field-Effect Transistor, 7A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 228 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 2SK1068 OMO.#: OMO-2SK1068-1190 |
Neu und Original |
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Mfr.#: 2SK1155 OMO.#: OMO-2SK1155-1190 |
Neu und Original |
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Mfr.#: 2SK1519-E OMO.#: OMO-2SK1519-E-1190 |
Power Field-Effect Transistor, 30A I(D), 450V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: 2SK1582 / G15 OMO.#: OMO-2SK1582-G15-1190 |
Neu und Original |
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Mfr.#: 2SK1603,K1603, OMO.#: OMO-2SK1603-K1603--1190 |
Neu und Original |
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Mfr.#: 2SK1733-AZ OMO.#: OMO-2SK1733-AZ-1190 |
Neu und Original |
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Mfr.#: 2SK1745 OMO.#: OMO-2SK1745-1190 |
Neu und Original |
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|
Mfr.#: 2SK1847-TB-E OMO.#: OMO-2SK1847-TB-E-1190 |
Neu und Original |
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Mfr.#: 2SK1875-BL OMO.#: OMO-2SK1875-BL-1190 |
Neu und Original |
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Mfr.#: 2SK1971-E OMO.#: OMO-2SK1971-E-1190 |
Power Field-Effect Transistor, 35A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
