OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI7252DP-T1-GE3

SI7252DP-T1-GE3
Mfr. #:
SI7252DP-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET 2N-CH 100V 36.7A PPAK 8SO
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI7252DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI7252DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
Si72, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 100 V 18 mOhm 46 W TrenchFET Mosfet - PowerPAK SO-8
***ical
Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R
***et Europe
Trans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO T/R
***ark
DUAL N-CHANNEL 100-V (D-S) MOSFET
***i-Key
MOSFET 2N-CH 100V 36.7A PPAK 8SO
***ronik
N-CH 100V 36,7A 17mOhm PPSO-8
***
DUAL N-CHAN 100-V
***nell
MOSFET, N-CH, 100V, 36.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:36.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:46W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 36.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:36.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:46W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jun-2015); Operating Temperature Min:-55°C
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
Teil # Mfg. Beschreibung Aktie Preis
SI7252DP-T1-GE3
DISTI # SI7252DP-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 100V 36.7A PPAK 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4In Stock
  • 1000:$1.0977
  • 500:$1.3248
  • 100:$1.6125
  • 10:$2.0060
  • 1:$2.2300
SI7252DP-T1-GE3
DISTI # SI7252DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 100V 36.7A PPAK 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4In Stock
  • 1000:$1.0977
  • 500:$1.3248
  • 100:$1.6125
  • 10:$2.0060
  • 1:$2.2300
SI7252DP-T1-GE3
DISTI # SI7252DP-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 100V 36.7A PPAK 8SO
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 6000:$0.9555
  • 3000:$0.9922
SI7252DP-T1-GE3
DISTI # V36:1790_07433164		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		0
  • 3000:$1.1450
SI7252DP-T1-GE3
DISTI # V72:2272_07433164		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant		0
    SI7252DP-T1-GE3
    DISTI # SI7252DP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO T/R (Alt: SI7252DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Asia - 0
      SI7252DP-T1-GE3
      DISTI # SI7252DP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO T/R (Alt: SI7252DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel      		Europe - 0
      • 30000:€0.7919
      • 18000:€0.8379
      • 12000:€0.9429
      • 6000:€1.1439
      • 3000:€1.6329
      SI7252DP-T1-GE3
      DISTI # SI7252DP-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 100V 10.1A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7252DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.8969
      • 18000:$0.9219
      • 12000:$0.9479
      • 6000:$0.9879
      • 3000:$1.0179
      SI7252DP-T1-GE3
      DISTI # 78-SI7252DP-T1-GE3      		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		0
      • 1:$2.1700
      • 10:$1.8000
      • 100:$1.4000
      • 500:$1.2200
      • 1000:$1.0100
      • 3000:$0.9450
      • 6000:$0.9100
      • 9000:$0.8750
      SI7252DP-T1-GE3
      DISTI # 2364060      		Vishay IntertechnologiesMOSFET, N-CH, 100V, 36.7A, SOIC-8
      RoHS: Compliant      		0
      • 100:$2.1100
      • 10:$2.7300
      • 1:$3.2900
      SI7252DP-T1-GE3
      DISTI # 2364060      		Vishay IntertechnologiesMOSFET, N-CH, 100V, 36.7A, SOIC-851
      • 500:£0.9540
      • 250:£1.0200
      • 100:£1.0900
      • 10:£1.4300
      • 1:£1.9200
      SI7252DP-T1-GE3Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant      		Americas - Stock
        Bild Teil # Beschreibung
        SI7252DP-T1-GE3

        Mfr.#: SI7252DP-T1-GE3

        OMO.#: OMO-SI7252DP-T1-GE3

        		 MOSFET 100V Vds 20V Vgs PowerPAK SO-8
        SI7252DP-T1-GE3

        Mfr.#: SI7252DP-T1-GE3

        OMO.#: OMO-SI7252DP-T1-GE3-VISHAY

        		 MOSFET 2N-CH 100V 36.7A PPAK 8SO
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4500
        Menge eingeben:
        Der aktuelle Preis von SI7252DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        0,00 $
        0,00 $
        10
        0,00 $
        0,00 $
        100
        0,00 $
        0,00 $
        500
        0,00 $
        0,00 $
        1000
        0,00 $
        0,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
        Beginnen mit
        Top