RGTV60TK65GVC11

RGTV60TK65GVC11
Mfr. #:
RGTV60TK65GVC11
Hersteller:
Rohm Semiconductor
Beschreibung:
IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RGTV60TK65GVC11 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RGTV60TK65GVC11 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-3PFM
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Maximale Gate-Emitter-Spannung:
30 V
Kontinuierlicher Kollektorstrom bei 25 C:
33 A
Pd - Verlustleistung:
76 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
33 A
Marke:
ROHM Halbleiter
Gate-Emitter-Leckstrom:
200 nA
Produktart:
IGBT-Transistoren
Unterkategorie:
IGBTs
Tags
RGTV6, RGTV, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Teil # Mfg. Beschreibung Aktie Preis
RGTV60TK65GVC11
DISTI # RGTV60TK65GVC11-ND
ROHM Semiconductor650V 30A FIELD STOP TRENCH IGBT
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 2700:$2.4542
  • 900:$2.9100
  • 450:$3.2430
  • 25:$3.9444
  • 10:$4.1720
  • 1:$4.6500
RGTV60TK65GVC11
DISTI # RGTV60TK65GVC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 33A 3-Pin TO-3PFM Tube - Rail/Tube (Alt: RGTV60TK65GVC11)
Min Qty: 450
Container: Tube
Americas - 0
    RGTV60TK65GVC11
    DISTI # 69AC6514
    ROHM SemiconductorIGBT, 650V, 33A, 76W, TO-3PFM,DC Collector Current:33A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:76W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-3PFM,No. of Pins:3Pins,RoHS Compliant: Yes60
    • 500:$3.2300
    • 250:$3.6100
    • 100:$3.8000
    • 50:$3.9900
    • 25:$4.1900
    • 10:$4.3800
    • 1:$5.1500
    RGTV60TK65GVC11
    DISTI # 755-RGTV60TK65GVC11
    ROHM SemiconductorIGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
    RoHS: Compliant
    450
    • 1:$4.6400
    • 10:$3.9400
    • 100:$3.4100
    • 250:$3.2400
    • 500:$2.9100
    • 1000:$2.4500
    • 2500:$2.3300
    RGTV60TK65GVC11ROHM Semiconductor 24
    • 19:$3.8600
    • 6:$4.2460
    • 1:$5.7900
    RGTV60TK65GVC11
    DISTI # 2913835
    ROHM SemiconductorIGBT, 650V, 33A, 76W, TO-3PFM60
    • 500:£2.3200
    • 250:£2.5900
    • 100:£2.7300
    • 10:£3.1400
    • 1:£4.1000
    RGTV60TK65GVC11ROHM SemiconductorIGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
    RoHS: Compliant
    Americas -
      RGTV60TK65GVC11ROHM SemiconductorRoHS(ship within 1day)30
      • 1:$3.8000
      • 10:$2.8500
      • 50:$2.5100
      • 100:$2.1400
      • 500:$1.9900
      • 1000:$1.9300
      RGTV60TK65GVC11
      DISTI # 2913835
      ROHM SemiconductorIGBT, 650V, 33A, 76W, TO-3PFM
      RoHS: Compliant
      60
      • 1000:$3.8300
      • 500:$3.8700
      • 250:$4.0800
      • 100:$4.3200
      • 10:$4.8800
      • 1:$5.2200
      Bild Teil # Beschreibung
      RGTV60TS65DGC11

      Mfr.#: RGTV60TS65DGC11

      OMO.#: OMO-RGTV60TS65DGC11

      IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
      RGTV60TS65GC11

      Mfr.#: RGTV60TS65GC11

      OMO.#: OMO-RGTV60TS65GC11

      IGBT Transistors 650V 30A TO-247N Field Stp Trnch IGBT
      RGTV60TK65GVC11

      Mfr.#: RGTV60TK65GVC11

      OMO.#: OMO-RGTV60TK65GVC11

      IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
      RGTV60TK65DGVC11

      Mfr.#: RGTV60TK65DGVC11

      OMO.#: OMO-RGTV60TK65DGVC11

      IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
      RGTV60TK65DGVC11

      Mfr.#: RGTV60TK65DGVC11

      OMO.#: OMO-RGTV60TK65DGVC11-ROHM-SEMI

      650V 30A FIELD STOP TRENCH IGBT
      RGTV60TK65GVC11

      Mfr.#: RGTV60TK65GVC11

      OMO.#: OMO-RGTV60TK65GVC11-ROHM-SEMI

      650V 30A FIELD STOP TRENCH IGBT
      RGTV60TS65DGC11

      Mfr.#: RGTV60TS65DGC11

      OMO.#: OMO-RGTV60TS65DGC11-ROHM-SEMI

      650V 30A FIELD STOP TRENCH IGBT
      RGTV60TS65GC11

      Mfr.#: RGTV60TS65GC11

      OMO.#: OMO-RGTV60TS65GC11-ROHM-SEMI

      650V 30A FIELD STOP TRENCH IGBT
      Verfügbarkeit
      Aktie:
      450
      Auf Bestellung:
      2433
      Menge eingeben:
      Der aktuelle Preis von RGTV60TK65GVC11 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,64 $
      4,64 $
      10
      3,94 $
      39,40 $
      100
      3,41 $
      341,00 $
      250
      3,24 $
      810,00 $
      500
      2,91 $
      1 455,00 $
      1000
      2,45 $
      2 450,00 $
      2500
      2,33 $
      5 825,00 $
      5000
      2,24 $
      11 200,00 $
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