SI2347DS-T1-GE3

Mfr. #:: SI2347DS-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -30V Vds 20V Vgs SOT-23
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI2347DS-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI2347DS-T1-GE3 Datasheet SI2347DS-T1-GE3 Datasheet (P4-P6)SI2347DS-T1-GE3 Datasheet (P7-P9)SI2347DS-T1-GE3 Datasheet (P10)
ECAD Model:
Mehr Informationen:: SI2347DS-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 5 A

Rds On - Drain-Source-Widerstand:: 33 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 22 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 1.7 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 1.45 mm

Länge:: 2.9 mm

Serie:: SI2

Transistortyp:: 1 P-Channel

Breite:: 1.6 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 10 S

Abfallzeit:: 9 ns

Produktart:: MOSFET

Anstiegszeit:: 6 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 19 ns

Typische Einschaltverzögerungszeit:: 6 ns

Gewichtseinheit:: 0.000282 oz

Tags: SI2347, SI234, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2347DS-T1-GE3 Beschreibung

***ure Electronics: P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3

***enic: 30V 5A 1.7W 42m´Î@10V3.8A 2.5V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***roFlash: Small Signal Field-Effect Transistor, 5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P-CH, -30V, -5A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 1.7W; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

SI2347DS-T1-GE3 Mehr Informationen

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI2347DS-T1-GE3 DISTI # V72:2272_09216893	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	1598	1000:$0.0938 500:$0.1226 250:$0.1411 100:$0.1568 25:$0.2662 10:$0.2956 1:$0.4598
SI2347DS-T1-GE3 DISTI # V36:1790_09216893	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	0	1500000:$0.0682 300000:$0.0717 30000:$0.0783 3000:$0.0794
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 1 Container: Cut Tape (CT)	24666In Stock	1000:$0.1030 500:$0.1339 100:$0.1957 10:$0.3140 1:$0.4200
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 1 Container: Digi-Reel®	24666In Stock	1000:$0.1030 500:$0.1339 100:$0.1957 10:$0.3140 1:$0.4200
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 5A SOT-23 Min Qty: 3000 Container: Tape & Reel (TR)	24000In Stock	150000:$0.0665 75000:$0.0683 30000:$0.0761 15000:$0.0814 6000:$0.0892 3000:$0.0945
SI2347DS-T1-GE3 DISTI # 32705357	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000:$0.0805
SI2347DS-T1-GE3 DISTI # 32435739	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin SOT-23 T/R RoHS: Compliant	2198	1000:$0.0939 500:$0.1227 250:$0.1411 101:$0.1568
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2347DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.0639 18000:$0.0649 12000:$0.0669 6000:$0.0699 3000:$0.0719
SI2347DS-T1-GE3 DISTI # SI2347DS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 3.8A 3-Pin TO-236 T/R (Alt: SI2347DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0689 18000:€0.0739 12000:€0.0799 6000:€0.0929 3000:€0.1369
SI2347DS-T1-GE3 DISTI # 99W9603	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET RoHS: Not Compliant	0	50000:$0.0650 30000:$0.0710 20000:$0.0770 10000:$0.0870 5000:$0.0990 1:$0.1050
SI2347DS-T1-GE3 DISTI # 70AC6496	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23,Transistor Polarity:P Channel,Continuous Drain Current Id:-5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.033ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,MSL:- RoHS Compliant: Yes RoHS: Compliant	4252	1000:$0.1030 500:$0.1340 250:$0.1500 100:$0.1650 50:$0.2240 25:$0.2830 1:$0.4800
SI2347DS-T1-GE3 DISTI # 70459513	Vishay Siliconix	-30V .042Ohm@10V 5A P-Ch G-III RoHS: Not Compliant	0	3000:$0.1650 6000:$0.1540 12000:$0.1100 24000:$0.0990
SI2347DS-T1-GE3	Vishay Intertechnologies	P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3 RoHS: Compliant Min Qty: 3000	3000Reel	3000:$0.0610
SI2347DS-T1-GE3 DISTI # 78-SI2347DS-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	71661	1:$0.4800 10:$0.2830 100:$0.1650 500:$0.1340 1000:$0.1030 3000:$0.0890
SI2347DS-T1-GE3 DISTI # 2679678	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23 RoHS: Compliant	0	3000:$0.1200
SI2347DS-T1-GE3 DISTI # 2646368	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23 RoHS: Compliant	0	1000:$0.1630 500:$0.2120 100:$0.3100 10:$0.4970 1:$0.6600
SI2347DS-T1-GE3 DISTI # 2646368	Vishay Intertechnologies	MOSFET, P-CH, -30V, -5A, SOT-23	962	1500:£0.0730 500:£0.0800 100:£0.1300 50:£0.2260 5:£0.2470
SI2347DS-T1-GE3	Vishay	P-Channel 30 V 42 mOhm 22 nC Surface Mount Power Mosfet - SOT-23-3	100	1:¥4.2157 10:¥2.9679 100:¥1.9470 500:¥1.1504 1000:¥0.8849
SI2347DS-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SOT-23 RoHS: Compliant	Americas - 69000	3000:$0.0720 6000:$0.0680 12000:$0.0660 18000:$0.0640

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: IRLML6344TRPBF OMO.#: OMO-IRLML6344TRPBF	MOSFET MOSFT 5.0A 29mOhm 30V 2.5V drv capable
	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU	8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
	Mfr.#: LG R971-KN-1 OMO.#: OMO-LG-R971-KN-1	Standard LEDs - SMD Green, 570nm 26mcd, 20mA
	Mfr.#: BLM21PG221SN1D OMO.#: OMO-BLM21PG221SN1D	Ferrite Beads 0805 220 OHM
	Mfr.#: RC0603FR-071KL OMO.#: OMO-RC0603FR-071KL	Thick Film Resistors - SMD 1K OHM 1%
	Mfr.#: MH2029-300Y OMO.#: OMO-MH2029-300Y	Ferrite Beads 30 ohms 25% HIGH CURRENT
	Mfr.#: IRLML6344TRPBF OMO.#: OMO-IRLML6344TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 5A SOT23
	Mfr.#: MH2029-300Y OMO.#: OMO-MH2029-300Y-BOURNS	EMI Filter Beads, Chips & Arrays Impedance 30ohms IDC 3.0
	Mfr.#: BLM21PG221SN1D OMO.#: OMO-BLM21PG221SN1D-MURATA-ELECTRONICS	EMI Filter Beads, Chips & Arrays 0805 220 OHM
	Mfr.#: ATMEGA328P-AU OMO.#: OMO-ATMEGA328P-AU-MICROCHIP-TECHNOLOGY	Microcontrollers - MCU 8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V

Verfügbarkeit

Aktie:: 39
Auf Bestellung:: 2022
Menge eingeben:

Der aktuelle Preis von SI2347DS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,48 $~~; ~~0,48 $~~

10: ~~0,28 $~~; ~~2,83 $~~

100: ~~0,16 $~~; ~~16,50 $~~

500: ~~0,13 $~~; ~~67,00 $~~

1000: ~~0,10 $~~; ~~103,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SI2347 3
SI234 27
SI23 561
SI2 1125

Neueste Produkte

SIRA20DP TrenchFET® Gen IV MOSFET

Vishay Siliconix's SIRA20DP TrenchFET® Gen IV MOSFET provides the lowest maximum RDS(on) rating at VGS = 10 V.
TrenchFET® Power MOSFET Optimized for Standar

Vishay's 60 V TrenchFET® Gen IV n-channel power MOSFET is optimized for standard gate drives.
Compare SI2347DS-T1-GE3

SI2347DST1E3 vs SI2347DST1GE3 vs SI2347DST1GE3CUTTAPE
650 V Fast Body Diode MOSFETs

Vishay’s 650 V EF series of fast body diode MOSFETs provides a full complement to Vishay's standard E series components by delivering a 10 times lower Qrr.
SiR626DP-T1-RE3 TrenchFET® Gen IV Power MOSFE

Vishay's SiR626DP-T1-RE3 N-Channel 60 V (D-S) TrenchFET® MOSFET features a very low RDS - Qg figure-of-merit (FOM).
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.

More Newest Products

SI2347DS-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes