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IRG4BC40W-STRRP

IRG4BC40W-STRRP
Mfr. #:
IRG4BC40W-STRRP
Hersteller:
Infineon / IR
Beschreibung:
IGBT Modules 600V 40AD2PAK
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4BC40W-STRRP Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC40W-STRRP DatasheetIRG4BC40W-STRRP Datasheet (P4-P6)IRG4BC40W-STRRP Datasheet (P7-P9)IRG4BC40W-STRRP Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRG4BC40W-STRRP Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
600 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Paket / Koffer:
D-PAK-3
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Breite:
9.65 mm
Marke:
Infineon / IR
Montageart:
SMD/SMT
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
800
Unterkategorie:
IGBTs
Teil # Aliase:
SP001537010
Gewichtseinheit:
0.009185 oz
Tags
IRG4BC40W-S, IRG4BC40W, IRG4BC4, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***ronik
IGBT 600V 20A 2.05V D2PAK RoHSconf
***el Electronic
Fixed Inductors 0.6x0.3mm 27nH 120mA+/-5%
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Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***or
IGBT FIELD STOP 600V 40A D2PAK
***ure Electronics
IGBT Transistors 600V 20A FSP IGBT
***ment14 APAC
IGBT, 600V, 40A, 150DEG C, 208W;
***rchild Semiconductor
Using novel field-stop IGBT technology, Fairchild’s new series of field-stop IGBTs offer optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 40A 156000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***el Electronic
0402 1.8 pF 50 V ±0.05 pF Tolerance C0G SMT Multilayer Ceramic Capacitor
*** Electronic Components
IGBT Transistors IGBT PRODUCTS
***or
IKB20N60TA - 600V LOW LOSS SWITC
***ineon SCT
Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
***ow.cn
Trans IGBT Chip N-CH 600V 31A 100000mW 3-Pin(2+Tab) D2PAK Tube
***ineon
Target Applications: Air Conditioner; Dryer; Pump; Solar; UPS; Washing Machine
***ment14 APAC
IGBT, D2-PAK; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:17A; Fall Time Max:230ns; Package / Case:D2-PAK; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:27ns; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 30A 130000mW 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.9pF 25volts C0G +/-0.5pF
***ineon SCT
Infineon's 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO263-3, RoHS
***ment14 APAC
IGBT,600V,15A,TO263; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:130W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; Power Dissipation Max:130W
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications
***-Wing Technology
Tube Surface Mount N-CHANNEL SINGLE WITH BUILT-IN DIODE IGBT Transistor 2.7V @ 15V 7A 28A 125W 31ns
***et
TO-263AB, COMP, N-CH, 600V SMPS II IGBT W/STEALTH DIODE
*** Electronic Components
Motor / Motion / Ignition Controllers & Drivers Comp N-Ch 600V
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IC REG LINEAR 1.5V 2A TO220FP-3
300-1200V IGBTs
Infineon Rectifier has an extensive portfolio of IGBTs that ranges from 300V to 1200V and achieves the highest performance for specific application requirements. The Infineon IGBT portfolio includes the new ultra-fast IRG7PH 1200V Trench IGBTs that offer higher system efficiency while cutting switching losses and delivering higher switching frequencies. International Infineon IRG7PH ultra-fast 1200V IGBTs utilize thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP-ND		Infineon Technologies AGIGBT 600V 40A 160W D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Limited Supply - Call
  • 800:$2.6734
IRG4BC40W-STRRP
DISTI # IRG4BC40W-STRRP		Infineon Technologies AGTrans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRG4BC40W-STRRP)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 800:$2.0900
  • 1600:$1.9900
  • 3200:$1.8900
  • 4800:$1.8900
  • 8000:$1.7900
IRG4BC40W-STRRP
DISTI # 942-IRG4BC40W-STRRP		Infineon Technologies AGIGBT Modules 600V 40AD2PAK
RoHS: Compliant		0
    Bild Teil # Beschreibung
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF

    		 IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    IRG4BC40W-SPBF

    Mfr.#: IRG4BC40W-SPBF

    OMO.#: OMO-IRG4BC40W-SPBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors 600V WARP 60-150 KHZ DISCRETE IGBT
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IRG4BC40W-STRRP dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,06 $
    4,06 $
    10
    3,45 $
    34,50 $
    100
    2,99 $
    299,00 $
    250
    2,83 $
    707,50 $
    500
    2,54 $
    1 270,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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