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RN4907,LF(CT

RN4907,LF(CT
Mfr. #:
RN4907,LF(CT
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN4907,LF(CT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Polarität des Transistors:
NPN, PNP
Typischer Eingangswiderstand:
10 kOhms
Typisches Widerstandsverhältnis:
0.213
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
100 mA
Pd - Verlustleistung:
200 mW
Serie:
RN4907
Verpackung:
Spule
Emitter- Basisspannung VEBO:
6 V
Marke:
Toshiba
Anzahl der Kanäle:
2 Channel
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000212 oz
Tags
RN4907, RN490, RN49, RN4
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS PREBIAS NPN/PNP 50V US6
***
US6-PLN ACTIVE
***ical
Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***
TRANS US6 PLN (LF) 200MW
***et
Trans Digital BJT NPN/PNP 50V 0.1A 6-Pin US Embossed T/R
***el Electronic
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS NPN/PNP PREBIAS 0.2W US6
***et
Trans Digital BJT NPN 50V 0.1A 6-Pin US Embossed T/R
*** Electronics
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
***i-Key
TRANS 2NPN PREBIAS 0.2W US6
***el Electronic
IC OPAMP GP 2 CIRCUIT 10UMAX
***
TRANS US6 PLN (LF) 200MW
***icontronic
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon
***ure Electronics
MMDT5551 Series Dual NPN 160 V 200 mW Small Signal Transistor SMT - SOT-363
***(Formerly Allied Electronics)
Transistor Dual NPN 160V 0.2A SOT363-6 | Diodes Inc MMDT5551-7-F
***ical
Trans GP BJT NPN 160V 0.2A 200mW 6-Pin SOT-363 T/R
***eco
MMDT5551-7-F,BIPOLAR TRANSISTO R DUAL NPN SOT-363 ROHS 3K
***ment14 APAC
Transistor, NPN/NPN, SOT363; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Power Dissipation Pd:200mW; DC
***nell
TRANSISTOR, NPN/NPN, SOT363; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
***ure Electronics
UMB10N Series 50 V 100 mA Surface Mount Dual PNP Digital Transistor - SC-88
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 6-Pin UMT T/R
***ment14 APAC
Transistor DUAL UM6 PNP/PNP; Digital Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:50V; Continuous Current Ic:-100mA;
***ark
TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
***nell
TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
***p One Stop Global
Trans Digital BJT PNP 50V 100mA 200mW Automotive 6-Pin SOT-363 T/R
***ca Corp
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
***ure Electronics
DDA Series 50 V 100 mA Dual PNP Pre-Biased Small Signal Transistor - SOT-363
***(Formerly Allied Electronics)
Trans Digital BJT PNP 100mA 6Pin SOT363 | Diodes Inc DDA123JU-7-F
***ark
Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DDA123JU-7-F
Teil # Mfg. Beschreibung Aktie Preis
RN4907,LF
DISTI # RN4907LFCT-ND		Toshiba America Electronic ComponentsTRANS NPN/PNP PREBIAS 0.2W US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    RN4907,LF(CT
    DISTI # 757-RN4907LF(CT    		Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
    RoHS: Compliant    		0
    • 1:$0.4200
    • 10:$0.2310
    • 100:$0.0990
    • 1000:$0.0760
    • 3000:$0.0580
    • 9000:$0.0520
    • 24000:$0.0480
    • 45000:$0.0430
    • 99000:$0.0410
    Bild Teil # Beschreibung
    RN4907FE,LF(CT

    Mfr.#: RN4907FE,LF(CT

    OMO.#: OMO-RN4907FE-LF-CT

    		 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
    RN4907,LF

    Mfr.#: RN4907,LF

    OMO.#: OMO-RN4907-LF

    		 Bipolar Transistors - Pre-Biased US6-PLN
    RN4907,LF(CT

    Mfr.#: RN4907,LF(CT

    OMO.#: OMO-RN4907-LF-CT-123

    		 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
    RN4907(T5LFT)CT-ND

    Mfr.#: RN4907(T5LFT)CT-ND

    OMO.#: OMO-RN4907-T5LFT-CT-ND-1190

    		 Neu und Original
    RN4907(T5LFT)DKR-ND

    Mfr.#: RN4907(T5LFT)DKR-ND

    OMO.#: OMO-RN4907-T5LFT-DKR-ND-1190

    		 Neu und Original
    RN4907(T5LFT)TR-ND

    Mfr.#: RN4907(T5LFT)TR-ND

    OMO.#: OMO-RN4907-T5LFT-TR-ND-1190

    		 Neu und Original
    RN4907FELF(CTDKR-ND

    Mfr.#: RN4907FELF(CTDKR-ND

    OMO.#: OMO-RN4907FELF-CTDKR-ND-1190

    		 Neu und Original
    RN4907LFCT-ND

    Mfr.#: RN4907LFCT-ND

    OMO.#: OMO-RN4907LFCT-ND-1190

    		 Neu und Original
    RN4907FELF(CT

    Mfr.#: RN4907FELF(CT

    OMO.#: OMO-RN4907FELF-CT-1190

    		 Bipolar Transistors - Pre-Biased ES6 PLN (LF) TRAN 200MW/ 1MH
    RN4907

    Mfr.#: RN4907

    OMO.#: OMO-RN4907-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2000
    Menge eingeben:
    Der aktuelle Preis von RN4907,LF(CT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,42 $
    0,42 $
    10
    0,23 $
    2,31 $
    100
    0,10 $
    9,90 $
    1000
    0,08 $
    76,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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