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IRF7805PBF

IRF7805PBF
Mfr. #:
IRF7805PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 13A 8-SOIC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7805PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7805PBF DatasheetIRF7805PBF Datasheet (P4-P6)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.019048 oz
Montageart
SMD/SMT
Paket-Koffer
SOIC-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.5 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
16 ns
Anstiegszeit
20 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
13 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Rds-On-Drain-Source-Widerstand
11 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
38 ns
Typische-Einschaltverzögerungszeit
16 ns
Qg-Gate-Ladung
22 nC
Kanal-Modus
Erweiterung
Tags
IRF7805, IRF780, IRF78, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 11 mOhm 31 nC HEXFET® Power Mosfet - SOIC-8
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.2Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-12V
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***p One Stop Global
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
***et Europe
Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R
***Components
MOSFET N-Channel 30V 13A SOIC8
***ponent Sense
N CHANNEL MOSFET, 30V, 13A, SOIC
***i-Key
MOSFET N-CH 30V 13A 8-SOIC
***ark
Mosfet, N-Ch, 30V, 13A, Soic; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0092Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 13A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0092ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:HEXFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, 30V, 13A, SOIC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0092ohm; Tensione Vgs di Misura Rds(on):4.5V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:HEXFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
IRF7805PBF
DISTI # V36:1790_13890700		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
RoHS: Compliant		936
  • 2500:$0.6146
  • 1000:$0.6394
  • 500:$0.7584
  • 100:$0.8126
  • 10:$1.0238
  • 1:$1.1556
IRF7805TRPBF
DISTI # IRF7805PBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 13A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4818In Stock
  • 1000:$0.5965
  • 500:$0.7556
  • 100:$0.9743
  • 10:$1.2330
  • 1:$1.3900
IRF7805TRPBF
DISTI # IRF7805PBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 13A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4818In Stock
  • 1000:$0.5965
  • 500:$0.7556
  • 100:$0.9743
  • 10:$1.2330
  • 1:$1.3900
IRF7805TRPBF
DISTI # IRF7805PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 13A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.5405
IRF7805PBF
DISTI # IRF7805PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 13A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF7805PBF
    DISTI # 31266099    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
    RoHS: Compliant    		936
    • 500:$0.7584
    • 100:$0.8126
    • 14:$1.0238
    IRF7805PBF
    DISTI # 70017593    		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 9.2 Milliohms,ID 13A,SO-8,PD 2.5W,VGS +/-12V
    RoHS: Compliant    		0
    • 3800:$1.4550
    IRF7805PBF
    DISTI # 942-IRF7805PBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 11mOhms 22nC
    RoHS: Compliant    		2988
    • 1:$1.5200
    • 10:$1.3000
    • 100:$0.9940
    • 500:$0.8780
    • 1000:$0.6930
    IRF7805PBFInfineon Technologies AGPower Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
    RoHS: Compliant    		4120
    • 1000:$0.4900
    • 500:$0.5100
    • 100:$0.5300
    • 25:$0.5600
    • 1:$0.6000
    IRF7805PBFInternational Rectifier 
    RoHS: Not Compliant    		2402
    • 1000:$0.6100
    • 500:$0.6400
    • 100:$0.6600
    • 25:$0.6900
    • 1:$0.7500
    IRF7805PBFInternational Rectifier13 A, 30 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA66
      IRF7805PBF
      DISTI # 1013438      		Infineon Technologies AGMOSFET, N, LOGIC, SO-8
      RoHS: Compliant      		0
      • 1:$2.4100
      • 10:$2.0600
      • 100:$1.5800
      • 500:$1.3900
      • 1000:$1.1000
      • 2500:$0.9740
      IRF7805PBF
      DISTI # C1S322000569690      		Infineon Technologies AGTrans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
      RoHS: Compliant      		20
      • 5:$1.5600
      Bild Teil # Beschreibung
      IRF7853TRPBF

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      IRF7832TRPBF-CUT TAPE

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      OMO.#: OMO-IRF7832TRPBF-CUT-TAPE-1190

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      IRF7807VPBF

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      OMO.#: OMO-IRF7807VPBF-INFINEON-TECHNOLOGIES

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      IRF7807ZTRPBF

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      IRF7809AVTRPBF-1

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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von IRF7805PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,74 $
      0,74 $
      10
      0,70 $
      6,98 $
      100
      0,66 $
      66,15 $
      500
      0,62 $
      312,40 $
      1000
      0,59 $
      588,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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