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S25FL128SAGMFIR03

S25FL128SAGMFIR03
Mfr. #:
S25FL128SAGMFIR03
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S25FL128SAGMFIR03 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S25FL128SAGMFIR03 Mehr Informationen S25FL128SAGMFIR03 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
SOIC-16
Serie:
S25FL128S
Speichergröße:
128 Mbit
Maximale Taktfrequenz:
133 MHz
Oberflächentyp:
SPI
Organisation:
16 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Spule
Speichertyp:
NOCH
Geschwindigkeit:
133 MHz
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Werkspackungsmenge:
1450
Unterkategorie:
Speicher & Datenspeicherung
Handelsname:
SpiegelBit
Tags
S25FL128SAGMFIR0, S25FL128SAGMFIR, S25FL128SAGMFI, S25FL128SAGM, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Serial NOR Flash Memory, 128 Mbit Density, SOIC-16, RoHS
***et
NOR Flash Serial-SPI 3V 128Mbit 128M x 8it 16-Pin SOIC T/R
***ure Electronics
128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory
***ark
Tape And Reel / 128-Mbit Cmos 3.0 Volt 65Nm Flash Memorywith 133-Mhz Spi (Serial Peripheral Interface) And Multi I/o Bus - 64Kb, So3016 In T&r Packing, Reset# + Vio
S25FL128S NOR Flash Memory Devices
Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.
S25FL MirroBit Flash Non-Volatile Memory
Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
S25FLxS FL-S NOR Flash Memory Devices
Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.
Teil # Mfg. Beschreibung Aktie Preis
S25FL128SAGMFIR03
DISTI # S25FL128SAGMFIR03-ND		Cypress SemiconductorIC FLASH 128M SPI 133MHZ 16SOIC
RoHS: Compliant
Min Qty: 1450
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1450:$2.4646
S25FL128SAGMFIR03
DISTI # 51Y1001		Cypress SemiconductorTAPE AND REEL / 128-MBIT CMOS 3.0 VOLT 65NM FLASH MEMORYWITH 133-MHZ SPI (SERIAL PERIPHERAL INTERFACE) AND MULTI I/O BUS - 64KB, SO3016 IN T&R PACKING, RESET# + VIO0
  • 1:$3.2000
S25FL128SAGMFIR03
DISTI # 727-25FL128SAGMFIR03		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$4.4700
  • 10:$4.0000
  • 25:$3.6000
  • 100:$3.2800
  • 250:$2.9600
  • 500:$2.4000
  • 1450:$2.2400
Bild Teil # Beschreibung
CP2102N-A02-GQFN28R

Mfr.#: CP2102N-A02-GQFN28R

OMO.#: OMO-CP2102N-A02-GQFN28R

 USB Interface IC USB to UART bridge - QFN28
CC0603KRX7R8BB104

Mfr.#: CC0603KRX7R8BB104

OMO.#: OMO-CC0603KRX7R8BB104

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 25V X7R 10%
LQH2MPN4R7MGRL

Mfr.#: LQH2MPN4R7MGRL

OMO.#: OMO-LQH2MPN4R7MGRL

 Fixed Inductors 0806 4.7uH 20% 870mA 0.72ohms
1981584-1

Mfr.#: 1981584-1

OMO.#: OMO-1981584-1

 USB Connectors REC TYPE AB Au MICRO
06031A121JAT2A

Mfr.#: 06031A121JAT2A

OMO.#: OMO-06031A121JAT2A-AVX

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100volts 120pF 5% C0G
1981584-1

Mfr.#: 1981584-1

OMO.#: OMO-1981584-1-TE-CONNECTIVITY

 CONN RCPT USB2.0 MICRO AB SMD RA
C2220X104K2RACTU

Mfr.#: C2220X104K2RACTU

OMO.#: OMO-C2220X104K2RACTU-428

 Cap Ceramic 0.1uF 200V X7R 10% Pad SMD 2220 FlexiTerm 125C T/R
CP2102N-A02-GQFN28R

Mfr.#: CP2102N-A02-GQFN28R

OMO.#: OMO-CP2102N-A02-GQFN28R-1190

 USB to UART bridge - QFN28
434153017835

Mfr.#: 434153017835

OMO.#: OMO-434153017835-WURTH-ELECTRONICS

 SWITCH TACTILE SPST-NO 0.05A 12V
CC0603KRX7R8BB104

Mfr.#: CC0603KRX7R8BB104

OMO.#: OMO-CC0603KRX7R8BB104-YAGEO

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 25V X7R 10%
Verfügbarkeit
Aktie:
175
Auf Bestellung:
2158
Menge eingeben:
Der aktuelle Preis von S25FL128SAGMFIR03 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,47 $
4,47 $
10
4,00 $
40,00 $
25
3,60 $
90,00 $
100
3,28 $
328,00 $
250
2,96 $
740,00 $
500
2,40 $
1 200,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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