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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK652R0-30C,127 DISTI # 568-7490-5-ND | NXP Semiconductors | MOSFET N-CH 30V 120A TO220AB RoHS: Not compliant Min Qty: 5000 Container: Tube | Limited Supply - Call | |
| BUK652R0-30C,127 DISTI # 771-BUK652R030C127 | Nexperia | MOSFET N-CHAN 30V 120A RoHS: Compliant | 0 | |
| BUK652R0-30C127 | NXP Semiconductors | Now Nexperia BUK652R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 3183 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUK652R0-30C,127 |
MOSFET N-CH 30V 120A TO220AB |
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Mfr.#: BUK652R1-30C,127 |
MOSFET N-CH 30V 120A TO220AB |
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Mfr.#: BUK652R6-40C,127 |
MOSFET N-CH 40V 120A TO220AB |
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Mfr.#: BUK652R7-30C,127 |
MOSFET N-CH 30V 100A TO220AB |
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Mfr.#: BUK652R0-30C OMO.#: OMO-BUK652R0-30C-1190 |
Neu und Original |
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Mfr.#: BUK652R0-30C127 OMO.#: OMO-BUK652R0-30C127-1190 |
Now Nexperia BUK652R0-30C - Power Field-Effect Transistor, 120A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK652R1-30C127 OMO.#: OMO-BUK652R1-30C127-1190 |
Now Nexperia BUK652R1-30C - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK652R3-40C OMO.#: OMO-BUK652R3-40C-1190 |
MOSFET,N CH,40V,120A,SOT78 |
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Mfr.#: BUK652R3-40C127 OMO.#: OMO-BUK652R3-40C127-1190 |
Now Nexperia BUK652R3-40C - Power Field-Effect Transistor, 120A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: BUK652R6-40C127 OMO.#: OMO-BUK652R6-40C127-1190 |
Now Nexperia BUK652R6-40C - Power Field-Effect Transistor, 100A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |