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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUZ74A | Siemens | 2.1 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 | 580 | |
| BUZ74A | Siemens | 150 | ||
| BUZ74A | Siemens | Power Field-Effect Transistor, 2.1A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | Europe - 302 |
| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: BUZ30AHXKSA1 OMO.#: OMO-BUZ30AHXKSA1 |
MOSFET N-Ch 200V 21A TO220FP-3 |
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Mfr.#: BUZ102SL-4 OMO.#: OMO-BUZ102SL-4-1190 |
Neu und Original |
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Mfr.#: BUZ103S-4 OMO.#: OMO-BUZ103S-4-1190 |
Neu und Original |
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Mfr.#: BUZ104S OMO.#: OMO-BUZ104S-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
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Mfr.#: BUZ111 OMO.#: OMO-BUZ111-1190 |
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: BUZ15 OMO.#: OMO-BUZ15-1190 |
MOSFET Transistor, N-Channel, TO-204AE |
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Mfr.#: BUZ21L OMO.#: OMO-BUZ21L-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
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Mfr.#: BUZ311 OMO.#: OMO-BUZ311-1190 |
Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA |
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Mfr.#: BUZ31H3046 OMO.#: OMO-BUZ31H3046-1190 |
Power Transistor N Channel Enhancement 200V 14.5A 3-Pin TO-262 Through Hole - Bulk (Alt: BUZ31H3046) |
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Mfr.#: BUZ81 OMO.#: OMO-BUZ81-1190 |
INSTOCK |