IRLD110PBF

Mfr. #:: IRLD110PBF
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET N-CH 100V HEXFET MOSFET HEXDI
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IRLD110PBF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: Durchgangsloch

Paket / Koffer:: HVMDIP-4

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 1 A

Rds On - Drain-Source-Widerstand:: 540 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 5 V

Qg - Gate-Ladung:: 6.1 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 1.3 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Rohr

Transistortyp:: 1 N-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 1.3 S

Abfallzeit:: 17 ns

Produktart:: MOSFET

Anstiegszeit:: 4.7 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 16 ns

Typische Einschaltverzögerungszeit:: 9.3 ns

Tags: IRLD11, IRLD1, IRLD, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRLD110PBF Beschreibung

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4

***et: Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP

***ment14 APAC: MOSFET, N, LOGIC, HEXDIP; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:1A; Package / Case:HEXDIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V

***ure Electronics: Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4

***et: Trans MOSFET N-CH 100V 1.3A 4-Pin HVMDIP

***ark: N Channel Mosfet, 100V, 1.3A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:1.3A; Current Temperature:25°C; Device Marking:IRLD120PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V

***ure Electronics: Single N-Channel 60 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4

*** electronic: Transistor MOSFET N-Ch. 1A/100V DIP4

***et: Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP

***nell: MOSFET, N, DIL; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:1A; Resistance, Rds On:0.54ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:DIP; Termination Type:Through Hole; Current, Idm Pulse:8A; Device Marking:IRFD110PBF; Lead Spacing:2.54mm; No. of Pins:4; Power Dissipation:1.3W; Power, Pd:1.3W; Row Pitch:7.62mm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:100V

***ure Electronics: Single P-Channel 60 V 0.5 Ohms Through Hole Power Mosfet - HVMDIP-4

***(Formerly Allied Electronics): MOSFET, Power,P-Ch,VDSS -60V,RDS(ON) 0.5Ohm,ID -1.1A,HD-1,PD 1.3W,VGS+/-20V,-55C

***ical: Trans MOSFET P-CH 60V 1.1A 4-Pin HVMDIP

***ark: P CHANNEL MOSFET, -60V, 1.1A, HD-1; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:1.1A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, P, DIL; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.5ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 1.3W; Transistor Case Style: DIP; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: -1.1A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Spacing: 2.54mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Pin Format: 4; Pulse Current Idm: 8.8A; Row Pitch: 7.62mm; Voltage Vds Typ: -60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: -10V

***Yang: PFC IC Critical Conduction (CRM), Discontinuous (Transition) 8-DIP - Rail/Tube

*** Electronic Components: Power Factor Correction - PFC Critical Conduction Mode PFC Controller

***i-Key: IC PFC CTRLR CRM/TRANSITION 8DIP

***nell: IC, CONTROLLER, PFC CRM, DIP8, 7530; UVLO: 3.5V; Supply Voltage Min: 14V; Supply Voltage Max: 24V; Startup Current: 40µA; Operating Supply Current: 1.5mA; Controller IC Case Style: DIP; No. of Pins: 8Pins; Duty Cycle (%): -; Frequency: -; Operating Temperature Min: -40°C; Operating Temperature Max: 125°C; MSL: -; SVHC: No SVHC (15-Jan-2018); Base Number: 7530; Input Voltage Max: 6V; No. of Outputs: 1Outputs; Operating Temperature Range: -40°C to +125°C; Output Current Max: 500mA; Output Voltage: 13V; Output Voltage Max: 14.5V; Primary Input Voltage: 14V; Termination Type: Through Hole

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IRLD110PBF DISTI # V36:1790_09218585	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2666	25000:$0.4273 10000:$0.4343 5000:$0.4419 2500:$0.4510
IRLD110PBF DISTI # V99:2348_09218585	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2219	25000:$0.4273 10000:$0.4343 5000:$0.4419 2500:$0.4510
IRLD110PBF DISTI # IRLD110PBF-ND	Vishay Siliconix	MOSFET N-CH 100V 1A 4-DIP RoHS: Compliant Min Qty: 1 Container: Tube	6003In Stock	1000:$0.4602 500:$0.5829 100:$0.7516 10:$0.9510 1:$1.0700
IRLD110PBF DISTI # 27471618	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2500	2500:$0.4510
IRLD110PBF DISTI # 27061118	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2219	18:$0.3655
IRLD110PBF DISTI # 26415619	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	1820	1000:$0.3167 500:$0.3340 100:$0.3714
IRLD110PBF DISTI # 30269327	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	1200	100:$0.4973
IRLD110PBF DISTI # IRLD110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP (Alt: IRLD110PBF) RoHS: Compliant Min Qty: 1	Europe - 1540	1:€0.4809 10:€0.3279 25:€0.2819 50:€0.2609 100:€0.2509 500:€0.2469 1000:€0.2419
IRLD110PBF DISTI # IRLD110PBF	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP - Bulk (Alt: IRLD110PBF) RoHS: Not Compliant Min Qty: 1 Container: Bulk	Americas - 83	1:$0.4649 10:$0.4339 25:$0.4329 50:$0.4319 100:$0.3869 500:$0.3479 1000:$0.3299
IRLD110PBF. DISTI # 26AC0668	Vishay Intertechnologies	Transistor Polarity:N Channel,Continuous Drain Current Id:1A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.54ohm,Rds(on) Test Voltage Vgs:5V,Threshold Voltage Vgs:2V,Power Dissipation Pd:1.3W,No. of Pins:4Pins,MSL:- RoHS Compliant: No	83	1:$0.9500 10:$0.7810 100:$0.6450 500:$0.6370 1000:$0.6290 5000:$0.6220 10000:$0.6140
IRLD110PBF DISTI # 70078982	Vishay Intertechnologies	MOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 0.54Ohm,ID 1A,HD-1,PD 1.3W,VGS +/-10V,VF 2. RoHS: Compliant	38	1:$1.0500 25:$1.0100 100:$0.9400 250:$0.8600 500:$0.8000
IRLD110PBF DISTI # 70459629	Vishay Siliconix	MOSFET N-CH 100V 1A 4-DIP RoHS: Compliant	0	2500:$2.0050
IRLD110PBF DISTI # 844-IRLD110PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 1.0 Amp RoHS: Compliant	6204	1:$1.0700 10:$0.9510 100:$0.7520 500:$0.5830 1000:$0.4610 2500:$0.3800 5000:$0.3610 10000:$0.3480
IRLD110 DISTI # 844-IRLD110	Vishay Intertechnologies	MOSFET N-Chan 100V 1.0 Amp RoHS: Not compliant	0
IRLD110PBF	Vishay Intertechnologies	Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 RoHS: Compliant	1950Tube	50:$0.5300 250:$0.3900 500:$0.3750 1000:$0.3600 2000:$0.3450
IRLD110PBF DISTI # 301338P	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 1A HVMDIP4, TU	90	50:£0.5240 100:£0.4800 250:£0.4640 500:£0.4300
IRLD110PBF DISTI # 301338	Vishay Intertechnologies	MOSFET N-CHANNEL 100V 1A HVMDIP4, PK	460	5:£0.6380 50:£0.5240 100:£0.4800 250:£0.4640 500:£0.4300
IRLD110PBF DISTI # IRLD110PBF	Vishay Intertechnologies	Transistor: N-MOSFET,unipolar,100V,0.7A,1.3W,DIP4	575	1:$0.5895 5:$0.3806 25:$0.3411 100:$0.2947 500:$0.2688
IRLD110PBF DISTI # IRLD110PBF	Vishay Intertechnologies	N-LogL 100V 1A 1,3W 0,54R DIP4 RoHS: Compliant	400	50:€0.2730 100:€0.2330 300:€0.2130 500:€0.2060
IRLD110PBF	International Rectifier	RoHS: Compliant	Europe - 19700
IRLD110PBF DISTI # 1013423	Vishay Intertechnologies	MOSFET, N, LOGIC, HEXDIP RoHS: Compliant	2148	5:£0.6510 25:£0.5340 100:£0.4630 250:£0.4310 500:£0.3990
IRLD110PBF DISTI # XSFP00000147621	Vishay Siliconix	Power Field-EffectTransistor,42AI(D),100V,0.018ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-252AA RoHS: Compliant	3869	200:$0.7067 3869:$0.6625
IRLD110PBF DISTI # C1S803600787331	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	1825	1000:$0.3310 500:$0.3600 100:$0.4380 50:$0.4920 25:$0.5410 5:$1.3500
IRLD110PBF DISTI # C1S806000516376	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2219	2500:$0.3655
IRLD110PBF DISTI # C1S803600837177	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP RoHS: Compliant	2666	2500:$0.3655
IRLD110PBF DISTI # 1013423	Vishay Intertechnologies	MOSFET, N, LOGIC, HEXDIP RoHS: Compliant	2088	1:$1.5100 10:$1.2400 100:$0.9500 500:$0.8170 1000:$0.6440 2500:$0.6020 5000:$0.5720 10000:$0.5510
IRLD110PBF	Vishay Intertechnologies	MOSFET N-Chan 100V 1.0 Amp RoHS: Compliant	Americas - 32150	50:$0.4450 100:$0.4260 250:$0.4150 500:$0.3760 1000:$0.3560

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von IRLD110PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,97 $~~; ~~0,97 $~~

10: ~~0,82 $~~; ~~8,20 $~~

100: ~~0,67 $~~; ~~67,30 $~~

500: ~~0,56 $~~; ~~278,00 $~~

1000: ~~0,46 $~~; ~~460,00 $~~

2500: ~~0,41 $~~; ~~1 022,50 $~~

5000: ~~0,39 $~~; ~~1 950,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IRLD110PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes