IKZ75N65EL5XKSA1

IKZ75N65EL5XKSA1
Mfr. #:
IKZ75N65EL5XKSA1
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT PRODUCTS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IKZ75N65EL5XKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IKZ75N65EL5XKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
Technologie:
Si
Paket / Koffer:
TO-247-4
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
650 V
Kollektor-Emitter-Sättigungsspannung:
1.1 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
100 A
Pd - Verlustleistung:
536 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Serie:
TRENCHSTOP 5 L5
Verpackung:
Rohr
Marke:
Infineon-Technologien
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
240
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
IKZ75N65EL5 SP001174456
Tags
IKZ75N65E, IKZ7, IKZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 100A 536000mW 4-Pin(4+Tab) TO-247 Tube
***ark
IGBT, 650V, 100A, 175DEG C, 536W ROHS COMPLIANT: YES
***ineon
Infineons new L5 low saturation voltage (V CE(sat)) TRENCHSTOP IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55m TRENCHSTOP 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level 1.05V for 30A IGBT and 1.10V for 75A IGBT. | Summary of Features: Lowest saturation voltage V CE(sat) of only 1.05V; Low switching losses of 1.6mJ @ 25C for 30A IGBT; High thermal stability of electrical parameters - only 2% drift with T j increase from 25C to 175C; Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package | Benefits: Higher efficiency for 50Hz; Longer lifetime and higher reliability of IGBT; High design reliability due to stable thermal performance | Target Applications: UPS; Solar; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs
Infineon TRENCHSTOP™ 5 L5 (Low Saturation 5) IGBTs are at the other end of the switching frequency range, and are optimized to deliver outstanding performance in designs switching <10kHz. Infineon's L5 have been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. The L5 offer a low VCE(sat) of 1.05V for 30A IGBTs, lowest switching losses in reactive power mode, at cos φ <1 and high thermal stability of electrical parameters. A new efficiency level is reachable with the 1.05V VCE(sat) TRENCHSTOP™ 5 L5 for low speed switching devices.
Teil # Mfg. Beschreibung Aktie Preis
IKZ75N65EL5XKSA1
DISTI # V36:1790_06378866
Infineon Technologies AGTrans IGBT Chip N-CH 650V 100A 536000mW 4-Pin(4+Tab) TO-247 Tube
RoHS: Compliant
0
  • 240000:$4.4930
  • 120000:$4.4980
  • 24000:$5.1500
  • 2400:$6.4860
  • 240:$6.7200
IKZ75N65EL5XKSA1
DISTI # IKZ75N65EL5XKSA1-5-ND
Infineon Technologies AGIGBT 650V 100A TO247-4
RoHS: Compliant
Min Qty: 1
Container: Tube
Temporarily Out of Stock
  • 720:$6.2774
  • 240:$7.2089
  • 25:$8.3024
  • 10:$8.7070
  • 1:$9.6400
IKZ75N65EL5XKSA1
DISTI # IKZ75N65EL5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Bulk (Alt: IKZ75N65EL5XKSA1)
RoHS: Compliant
Min Qty: 76
Container: Bulk
Americas - 0
  • 380:$4.1900
  • 760:$4.1900
  • 228:$4.3900
  • 152:$4.5900
  • 76:$4.6900
IKZ75N65EL5XKSA1
DISTI # IKZ75N65EL5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: IKZ75N65EL5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$4.8900
  • 2400:$4.8900
  • 960:$5.0900
  • 480:$5.2900
  • 240:$5.4900
IKZ75N65EL5XKSA1
DISTI # SP001174456
Infineon Technologies AGTrans IGBT Chip N-CH 650V 100A 3-Pin TO-247 Tube (Alt: SP001174456)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.9900
  • 500:€4.2900
  • 100:€4.3900
  • 50:€4.5900
  • 25:€4.7900
  • 10:€4.9900
  • 1:€5.4900
IKZ75N65EL5XKSA1456
DISTI # IKZ75N65EL5XKSA1456
Infineon Technologies AGTransistor IGBT Chip P-Channel 650V 100A 4-Pin TO-247 Tube - Bulk (Alt: IKZ75N65EL5XKSA1456)
Min Qty: 76
Container: Bulk
Americas - 0
  • 380:$4.1900
  • 760:$4.1900
  • 228:$4.3900
  • 152:$4.5900
  • 76:$4.6900
IKZ75N65EL5XKSA1
DISTI # 726-IKZ75N65EL5XKSA1
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS310
  • 1:$9.1800
  • 10:$8.3000
  • 25:$7.9100
  • 100:$6.8700
  • 250:$6.5600
  • 500:$5.9800
IKZ75N65EL5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
42
  • 1000:$4.3700
  • 500:$4.6000
  • 100:$4.7900
  • 25:$4.9900
  • 1:$5.3800
IKZ75N65EL5XKSA1456Infineon Technologies AG 
RoHS: Not Compliant
240
  • 1000:$4.3700
  • 500:$4.6000
  • 100:$4.7900
  • 25:$4.9900
  • 1:$5.3800
Bild Teil # Beschreibung
TDC-GPX2 FLQM

Mfr.#: TDC-GPX2 FLQM

OMO.#: OMO-TDC-GPX2-FLQM

Data Acquisition ADCs/DACs - Specialized TDC-GPX2 FLQM LQFP64
FSB50550BS

Mfr.#: FSB50550BS

OMO.#: OMO-FSB50550BS

Motor / Motion / Ignition Controllers & Drivers Power Module
IHW30N160R5XKSA1

Mfr.#: IHW30N160R5XKSA1

OMO.#: OMO-IHW30N160R5XKSA1

IGBT Transistors
SKY16602-632LF

Mfr.#: SKY16602-632LF

OMO.#: OMO-SKY16602-632LF

PIN Diodes .2-4.0GHz -40C +85C RL 14dB Pin CW 30dBm
IPZA60R037P7XKSA1

Mfr.#: IPZA60R037P7XKSA1

OMO.#: OMO-IPZA60R037P7XKSA1

MOSFET HIGH POWER_NEW
TPS22810DRVR

Mfr.#: TPS22810DRVR

OMO.#: OMO-TPS22810DRVR

Power Switch ICs - Power Distribution TPS22810 18-V 2-A 72-MOHM ON-RESISTANCE
C1206C106J3RACAUTO

Mfr.#: C1206C106J3RACAUTO

OMO.#: OMO-C1206C106J3RACAUTO

Multilayer Ceramic Capacitors MLCC - SMD/SMT 25V 10uF X7R 1206 5% AEC-Q200
VLS201610CX-220M-1

Mfr.#: VLS201610CX-220M-1

OMO.#: OMO-VLS201610CX-220M-1-TDK

FIXED IND 22UH 480MA 1.582 OHM
1720BL15B0050E

Mfr.#: 1720BL15B0050E

OMO.#: OMO-1720BL15B0050E-JOHANSON-TECHNOLOGY

WIDEBAND BALUN
TDC-GPX2 FLQM

Mfr.#: TDC-GPX2 FLQM

OMO.#: OMO-TDC-GPX2-FLQM-1190

Data Acquisition ADCs/DACs - Specialized TDC-GPX2 FLQM LQFP64
Verfügbarkeit
Aktie:
310
Auf Bestellung:
2293
Menge eingeben:
Der aktuelle Preis von IKZ75N65EL5XKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
9,18 $
9,18 $
10
8,30 $
83,00 $
25
7,91 $
197,75 $
100
6,87 $
687,00 $
250
6,56 $
1 640,00 $
500
5,98 $
2 990,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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