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IRL2203NSTRLPBF

IRL2203NSTRLPBF
Mfr. #:
IRL2203NSTRLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRL2203NSTRLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRL2203NSTRLPBF DatasheetIRL2203NSTRLPBF Datasheet (P4-P6)IRL2203NSTRLPBF Datasheet (P7-P9)IRL2203NSTRLPBF Datasheet (P10)
ECAD Model:
Mehr Informationen:
IRL2203NSTRLPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
116 A
Rds On - Drain-Source-Widerstand:
10 mOhms
Vgs - Gate-Source-Spannung:
16 V
Qg - Gate-Ladung:
40 nC
Pd - Verlustleistung:
170 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001568324
Gewichtseinheit:
0.139332 oz
Tags
IRL2203NSTRL, IRL2203NST, IRL2203NS, IRL2203N, IRL2203, IRL22, IRL2, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 7 Milliohms; ID 116A; D2Pak; PD 180W; VGS +/-16V
***ure Electronics
Single N-Channel 30 V 7 mOhm 60 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Avalanche Rated; Logic Level
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:116A; Package/Case:D2-PAK; Power Dissipation, Pd:170W; Continuous Drain Current - 100 Deg C:82A; Drain Source On Resistance @ 10V:7mohm ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, 116A, D2-PAK ((NW)); Transistor Polarity:N Channel; Continuous Drain Current Id:116A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:116A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:400A; SMD Marking:L2203NS; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRL2203NSTRLPBF
DISTI # V72:2272_13892811		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R77
  • 25:$1.3733
  • 10:$1.5259
  • 1:$1.9786
IRL2203NSTRLPBF
DISTI # V36:1790_13892811		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R0
  • 800000:$0.7208
  • 400000:$0.7229
  • 80000:$0.8659
  • 8000:$1.0990
  • 800:$1.1370
IRL2203NSTRLPBF
DISTI # IRL2203NSTRLPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 116A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		504In Stock
  • 100:$1.4255
  • 10:$1.7730
  • 1:$1.9700
IRL2203NSTRLPBF
DISTI # IRL2203NSTRLPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 116A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		504In Stock
  • 100:$1.4255
  • 10:$1.7730
  • 1:$1.9700
IRL2203NSTRLPBF
DISTI # IRL2203NSTRLPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 116A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5600:$0.8447
  • 2400:$0.8771
  • 1600:$0.9421
  • 800:$1.1370
IRL2203NSTRLPBF
DISTI # 26196556		Infineon Technologies AGTrans MOSFET N-CH Si 30V 116A 3-Pin(2+Tab) D2PAK T/R77
  • 11:$1.9786
IRL2203NSTRLPBF
DISTI # SP001568324		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001568324)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 1600
  • 8000:€0.5139
  • 4800:€0.5529
  • 3200:€0.5999
  • 1600:€0.6539
  • 800:€0.7999
IRL2203NSTRLPBF
DISTI # IRL2203NSTRLPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 116A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRL2203NSTRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.6279
  • 4800:$0.6399
  • 3200:$0.6619
  • 1600:$0.6869
  • 800:$0.7129
IRL2203NSTRLPBF
DISTI # 13AC9253		Infineon Technologies AGMOSFET, N-CH, 30V, 116A, TO-263AB,Transistor Polarity:N Channel,Continuous Drain Current Id:116A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.007ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes0
  • 500:$1.1600
  • 250:$1.2400
  • 100:$1.3000
  • 50:$1.4000
  • 25:$1.5000
  • 10:$1.6000
  • 1:$1.8700
IRL2203NSTRLPBF
DISTI # 70017803		Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 30V,RDS(ON) 7 Milliohms,ID 116A,D2Pak,PD 180W,VGS +/-16V
RoHS: Compliant		0
  • 800:$1.2250
  • 1600:$1.2010
  • 4000:$1.1640
IRL2203NSTRLPBF
DISTI # 942-IRL2203NSTRLPBF		Infineon Technologies AGMOSFET MOSFT 30V 116A 7mOhm 40nC Log Lvl
RoHS: Compliant		1062
  • 1:$1.8200
  • 10:$1.5400
  • 100:$1.2300
  • 500:$1.0800
  • 800:$0.8980
IRL2203NSTRLPBFInternational Rectifier75 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB288
  • 268:$1.0406
  • 121:$1.1239
  • 1:$2.4975
IRL2203NSTRLPBF
DISTI # IRL2203NSPBF-GURT		Infineon Technologies AGN-LogL 30V 75A 180W 0,007R DPak
RoHS: Compliant		0
  • 10:€0.8140
  • 50:€0.5890
  • 200:€0.5140
  • 500:€0.4950
IRL2203NSTRLPBF
DISTI # XSKDRABS0033153		Infineon Technologies AG 
RoHS: Compliant		1600 in Stock0 on Order
  • 1600:$0.7880
  • 800:$0.8443
IRL2203NSTRLPBF
DISTI # 2725997		Infineon Technologies AGMOSFET, N-CH, 30V, 116A, TO-263AB799
  • 500:£0.6920
  • 250:£0.8180
  • 100:£0.9440
  • 10:£1.2200
  • 1:£1.6000
IRL2203NSTRLPBF
DISTI # 2725997		Infineon Technologies AGMOSFET, N-CH, 30V, 116A, TO-263AB
RoHS: Compliant		73
  • 800:$1.3500
  • 500:$1.6300
  • 100:$1.8500
  • 10:$2.3200
  • 1:$2.7400
Bild Teil # Beschreibung
S1M-13-F

Mfr.#: S1M-13-F

OMO.#: OMO-S1M-13-F

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ATMEGA328P-AUR

Mfr.#: ATMEGA328P-AUR

OMO.#: OMO-ATMEGA328P-AUR

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BCAP0005 P270 S01

Mfr.#: BCAP0005 P270 S01

OMO.#: OMO-BCAP0005-P270-S01

 Supercapacitors / Ultracapacitors 2.7V, 5F, wire lead ESHSR-0005C0-002R7
RC0805FR-0710KL

Mfr.#: RC0805FR-0710KL

OMO.#: OMO-RC0805FR-0710KL

 Thick Film Resistors - SMD 10K OHM 1%
282837-2

Mfr.#: 282837-2

OMO.#: OMO-282837-2-TE-CONNECTIVITY

 TERM BLK 2P SIDE ENT 5.08MM PCB
ATMEGA328P-AUR

Mfr.#: ATMEGA328P-AUR

OMO.#: OMO-ATMEGA328P-AUR-MICROCHIP-TECHNOLOGY

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GRT31CR61H106ME01L

Mfr.#: GRT31CR61H106ME01L

OMO.#: OMO-GRT31CR61H106ME01L-MURATA-ELECTRONICS

 Cap Ceramic 10uF 50V X5R 20% Pad SMD 1206 85C Automotive T/R
BCAP0005 P270 S01

Mfr.#: BCAP0005 P270 S01

OMO.#: OMO-BCAP0005-P270-S01-MAXWELL-TECHNOLOGIES

 CAP 5F -10% +20% 2.7V T/H
RC0805FR-0710KL

Mfr.#: RC0805FR-0710KL

OMO.#: OMO-RC0805FR-0710KL-YAGEO

 Thick Film Resistors - SMD 10K OHM 1%
S1M-13-F

Mfr.#: S1M-13-F

OMO.#: OMO-S1M-13-F-DIODES

 DIODE GEN PURP 1KV 1A SMA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRL2203NSTRLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,82 $
1,82 $
10
1,54 $
15,40 $
100
1,23 $
123,00 $
500
1,08 $
540,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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