STK800

Mfr. #:: STK800
Hersteller:: STMicroelectronics
Beschreibung:: MOSFET Power MOSFET
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: STK800 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: STK800 Mehr Informationen STK800 Product Details

Produkteigenschaft
Attributwert

Hersteller:: STMicroelectronics

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PolarPAK-10

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 30 V

Id - Kontinuierlicher Drainstrom:: 20 A

Rds On - Drain-Source-Widerstand:: 7.8 mOhms

Vgs - Gate-Source-Spannung:: 16 V

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 5.2 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Verpackung:: Spule

Höhe:: 0.8 mm

Länge:: 6.15 mm

Serie:: STK800

Transistortyp:: 1 N-Channel

Typ:: Leistungs-MOSFET

Breite:: 5.16 mm

Marke:: STMicroelectronics

Vorwärtstranskonduktanz - Min:: 44 S

Abfallzeit:: 15 ns

Produktart:: MOSFET

Anstiegszeit:: 50 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 45 ns

Typische Einschaltverzögerungszeit:: 15 ns

Tags: STK80, STK8, STK

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STK800 Beschreibung

***et Europe: Trans MOSFET N-CH 30V 20A 10-Pin PolarPAK T/R

***icroelectronics: N-channel 30V - 0.006Ohm - 20A - PolarPAK®

***ca Corp: Power Field-Effect Transistor, 20A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: Power MOSFET Transistors Power MOSFET

***nell: MOSFET, N CH, 30V, 20A, POLARPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 5.2W; Transistor Case Style: PolarPAK; No. of Pins: -; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***Yang: Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R - Tape and Reel

***ark: MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

***ment14 APAC: MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W

***ure Electronics: N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

***emi: N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ure Electronics: Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ

***r Electronics: Power Field-Effect Transistor, 17A I(D), 30V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N CH, 30V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode

***et Japan: Transistor MOSFET Array Dual N-CH 30V 25A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:30V; On

***nell: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 22W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
STK800 DISTI # 497-5123-1-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-6-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-2-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
STK800 DISTI # 511-STK800	STMicroelectronics	MOSFET Power MOSFET RoHS: Compliant	0
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	496	447:$0.4000 79:$0.4480 1:$1.2800
STK800	Vishay Semiconductors	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	2400	1251:$0.5600 251:$0.6400 1:$1.6000
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	33	7:$3.0000 3:$4.0000 1:$6.0000
STK800	STMicroelectronics		3191
STK800	STMicroelectronics		42	2:$4.4800 7:$2.9120 19:$2.2400
STK800 DISTI # 1752106	STMicroelectronics	MOSFET, N CH, 30V, 20A, POLARPAK RoHS: Compliant	0	10:$3.8600 1:$4.2900

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	Mfr.#: STK14C88B-NF35U OMO.#: OMO-STK14C88B-NF35U	NVRAM
	Mfr.#: STK0460P OMO.#: OMO-STK0460P-1190	Neu und Original
	Mfr.#: STK3310-28 OMO.#: OMO-STK3310-28-1190	Neu und Original
	Mfr.#: STK3311-X OMO.#: OMO-STK3311-X-1190	Neu und Original
	Mfr.#: STK499-240 OMO.#: OMO-STK499-240-1190	Neu und Original
	Mfr.#: STK65041MK3-H OMO.#: OMO-STK65041MK3-H-1190	Neu und Original
	Mfr.#: STK762-71F OMO.#: OMO-STK762-71F-1190	Neu und Original
	Mfr.#: STK672-060-E OMO.#: OMO-STK672-060-E-ON-SEMICONDUCTOR	Motor / Motion / Ignition Controllers & Drivers Unipoler 2PhaseMicro SteppingMotor Drive

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 4500
Menge eingeben:

Der aktuelle Preis von STK800 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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STK800

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes