RN2101MFV(TPL3)

RN2101MFV(TPL3)
Mfr. #:
RN2101MFV(TPL3)
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN2101MFV(TPL3) Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Aufbau:
Single
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
4.7 kOhms
Typisches Widerstandsverhältnis:
1
Montageart:
SMD/SMT
DC-Kollektor/Basisverstärkung hfe Min:
30
Kollektor- Emitterspannung VCEO Max:
50 V
Kontinuierlicher Kollektorstrom:
- 100 mA
Spitzen-DC-Kollektorstrom:
100 mA
Pd - Verlustleistung:
150 mW
Maximale Betriebstemperatur:
+ 150 C
Serie:
RN2101MFV
Verpackung:
Spule
DC-Stromverstärkung hFE Max:
30
Marke:
Toshiba
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
8000
Unterkategorie:
Transistoren
Tags
RN2101M, RN2101, RN210, RN21, RN2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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TRANSISTOR; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF
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Teil # Mfg. Beschreibung Aktie Preis
RN2101MFV(TPL3)
DISTI # RN2101MFV(TPL3)
Toshiba America Electronic ComponentsTrans Digital BJT PNP 50V 100mA 3-Pin VESM T/R - Tape and Reel (Alt: RN2101MFV(TPL3))
RoHS: Compliant
Min Qty: 8000
Container: Reel
Americas - 0
    RN2101MFV(TPL3)
    DISTI # 757-RN2101MFV(TPL3)
    Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
    RoHS: Compliant
    0
      Bild Teil # Beschreibung
      RN2101MFV,L3F

      Mfr.#: RN2101MFV,L3F

      OMO.#: OMO-RN2101MFV-L3F

      Bipolar Transistors - Pre-Biased Bias Resistor PNP -.1A -50V 4.7kohm
      RN2101MFV(TPL3)

      Mfr.#: RN2101MFV(TPL3)

      OMO.#: OMO-RN2101MFV-TPL3-

      Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
      RN2101MFV(TPL3)

      Mfr.#: RN2101MFV(TPL3)

      OMO.#: OMO-RN2101MFV-TPL3--123

      Bipolar Transistors - Pre-Biased 100mA -50volts 3Pin 4.7K x 4.7Kohms
      RN2101MFVL3XGF

      Mfr.#: RN2101MFVL3XGF

      OMO.#: OMO-RN2101MFVL3XGF-1190

      Neu und Original
      RN2101MFV(TL3PAV)

      Mfr.#: RN2101MFV(TL3PAV)

      OMO.#: OMO-RN2101MFV-TL3PAV--1190

      Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3500
      Menge eingeben:
      Der aktuelle Preis von RN2101MFV(TPL3) dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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