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STGB20NB41LZT4

STGB20NB41LZT4
Mfr. #:
STGB20NB41LZT4
Hersteller:
STMicroelectronics
Beschreibung:
IGBT Transistors N-Ch Clamped 20 Amp
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STGB20NB41LZT4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
STGB20NB41LZT4 DatasheetSTGB20NB41LZT4 Datasheet (P4-P6)STGB20NB41LZT4 Datasheet (P7-P9)
ECAD Model:
Mehr Informationen:
STGB20NB41LZT4 Mehr Informationen STGB20NB41LZT4 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
D2PAK-3
Montageart:
SMD/SMT
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
20 V
Kollektor-Emitter-Sättigungsspannung:
2 V
Maximale Gate-Emitter-Spannung:
12 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
200 W
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
STGB20NB41LZ
Qualifikation:
AEC-Q101
Verpackung:
Spule
Kontinuierlicher Kollektorstrom Ic Max:
40 A
Höhe:
4.6 mm
Länge:
10.4 mm
Breite:
9.35 mm
Marke:
STMicroelectronics
Kontinuierlicher Kollektorstrom:
20 A
Gate-Emitter-Leckstrom:
+/- 660 uA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
1000
Unterkategorie:
IGBTs
Handelsname:
PowerMESH
Gewichtseinheit:
0.079014 oz
Tags
STGB20NB4, STGB20NB, STGB20N, STGB20, STGB2, STGB, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 442 V 20 A Surface Mount Internally Clamped PowerMESH IGBT-D2PAK
***nell
IGBT, SINGLE, 412KV, 40A, TO-263-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.3V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 412V; Transistor Case Style: TO-263; No. of Pi
***ark
N CHANNEL IGBT, PowerMESH, CLAMPED, 40A, D2PAK, FULL REEL; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:1.3V; Power Dissipation:200W; Collector Emitter Voltage Max:412V; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 375V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STGB Series 425 Vce 40 A 2.3 us t(on) N-Channel PowerMESH™ IGBT - TO-263
***icroelectronics
20 A, 400 V internally clamped IGBT
***ser
IGBTs Insulated Gate Bipolar Transistor N-Ch Clamped 20 Amp
*** Electronic Components
IGBT Transistors N-Ch Clamped 20 Amp
***ronik
IGBT CLAMP 400V 20A 1,8V TO263
***et
STMICROELECTRONICS STGB20NB37LZT4
***el Electronic
DIODE ARRAY GP 300V 15A TO247-3
***nell
IGBT, SMD, 400V, 20A, D2-PAK; Transistor type:PowerMESH; Voltage, Vces:400V; Current, Ic continuous a max:40A; Voltage, Vce sat max:2V; Power dissipation:200W; Case style:D2-PAK; Current, Icm pulsed:80A; Pins, No. of:3; Termination Type:SMD; Time, fall:11500ns; Time, rise:600ns; Transistor polarity:N
***p One Stop Global
Trans IGBT Chip N-CH 380V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
***icroelectronics
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 380V V(BR)CES, N-Channel, TO-263AA
*** Electronic Components
IGBT Transistors EAS 350 mJ 350 V Int clamped IGBT
***et
STMICROELECTRONICS STGB35N35LZT4 IGBTS
***ical
Trans IGBT Chip N-CH 390V 25A 150000mW Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
STGB20N40LZ Series 390 V 25 A Automotive-Grade Internally Clamped IGBT -D2PAK-3
***icroelectronics
Automotive-grade 390 V internally clamped IGBT ESCIS 300 mJ
***icroelectronics SCT
Automotive-grade internally clamped IGBT, D2PAK, Tape and Reel
***(Formerly Allied Electronics)
IGBT N-Ch 390V 25A PowerMESH 300mJ D2PAK
***ical
Trans IGBT Chip N=-CH 600V 40A 208000mW 3-Pin(2+Tab) D2PAK T/R
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***nell
IGBT,N CH,600V,20A,D2PAK; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:208W
***et
Trans IGBT Chip N-CH 600V 40A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB
***ark
TAPE REEL/N-ch / 20A 600V IGBT
***nell
FAST & ULTRAFAST RECOVERY RECTIFIERS;
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
HGT1S10N120BN Series 1200 V 35 A 298 W SMT NPT N-Channel IGBT - TO-263AB
***nell
IGBT, SINGLE, 1.2KV, 35A, TO-263AB-3; DC Collector Current: 35A; Collector Emitter Saturation Voltage Vce(on): 2.45V; Power Dissipation Pd: 298W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***rchild Semiconductor
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Teil # Mfg. Beschreibung Aktie Preis
STGB20NB41LZT4
DISTI # V72:2272_17691836		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 1:$3.7200
STGB20NB41LZT4
DISTI # 497-4351-1-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-6-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2146In Stock
  • 500:$2.7827
  • 100:$3.2688
  • 10:$3.9900
  • 1:$4.4400
STGB20NB41LZT4
DISTI # 497-4351-2-ND		STMicroelectronicsIGBT 442V 40A 200W D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		2000In Stock
  • 2000:$2.1700
  • 1000:$2.2785
STGB20NB41LZT4
DISTI # 26199322		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 2000:$2.1874
  • 1000:$2.2968
STGB20NB41LZT4
DISTI # 25929241		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		994
  • 500:$2.2340
  • 250:$2.8080
  • 100:$2.8390
  • 25:$3.3520
  • 10:$3.3910
  • 4:$3.7200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 6000
  • 1:€5.3500
  • 25:€4.0600
  • 100:€3.5400
  • 250:€3.0900
  • 500:€2.0200
STGB20NB41LZT4
DISTI # STGB20NB41LZT4		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STGB20NB41LZT4)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.2900
  • 2000:$2.1900
  • 4000:$2.0900
  • 6000:$1.9900
  • 10000:$1.8900
STGB20NB41LZT4
DISTI # 33X1197		STMicroelectronicsIGBT Single Transistor, 40 A, 1.3 V, 200 W, 412 V, TO-263, 3 , RoHS Compliant: Yes437
  • 1:$4.4400
  • 10:$3.9900
  • 100:$3.2700
  • 500:$2.7800
STGB20NB41LZT4
DISTI # 511-STGB20NB41LZ		STMicroelectronicsIGBT Transistors N-Ch Clamped 20 Amp
RoHS: Compliant		0
  • 1000:$2.1700
STGB20NB41LZT4
DISTI # STGB20NB41LZ		STMicroelectronics382V 40A 200W DPak
RoHS: Compliant		970
  • 10:€1.5600
  • 50:€1.3600
  • 200:€1.2600
  • 500:€1.2000
STGB20NB41LZT4STMicroelectronicsINSTOCK1000
    STGB20NB41LZT4
    DISTI # 2353662    		STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant    		437
    • 1:$7.0300
    • 10:$6.3200
    • 100:$5.1800
    • 500:$4.4100
    STGB20NB41LZT4
    DISTI # C1S730200220417    		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		1000
    • 1000:$1.5800
    STGB20NB41LZT4
    DISTI # C1S730200437080    		STMicroelectronicsTrans IGBT Chip N-CH 382V 40A 200000mW Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		994
    • 250:$2.8010
    • 100:$2.8310
    • 25:$3.3380
    • 10:$3.3770
    • 1:$3.6980
    STGB20NB41LZT4
    DISTI # 2353662    		STMicroelectronicsIGBT, SINGLE, 412KV, 40A, TO-263-3
    RoHS: Compliant    		437
    • 1:£3.1400
    • 10:£2.0300
    • 100:£1.8500
    • 250:£1.6700
    • 500:£1.4900
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    Mfr.#: ISL9V5045S3ST-F085

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    OMO.#: OMO-STGB30H60DLFB-STMICROELECTRONICS

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    Mfr.#: B32932A3104K000

    OMO.#: OMO-B32932A3104K000-EPCOS

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    Verfügbarkeit
    Aktie:
    960
    Auf Bestellung:
    2943
    Menge eingeben:
    Der aktuelle Preis von STGB20NB41LZT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,11 $
    4,11 $
    10
    3,49 $
    34,90 $
    100
    3,03 $
    303,00 $
    250
    2,87 $
    717,50 $
    500
    2,58 $
    1 290,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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