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SI8489EDB-T2-E1

SI8489EDB-T2-E1
Mfr. #:
SI8489EDB-T2-E1
Hersteller:
Vishay
Beschreibung:
IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI8489EDB-T2-E1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI8489EDB-T2-E1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Montageart
SMD/SMT
Handelsname
MICROFOOT TrenchFET
Paket-Koffer
4-UFBGA
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
4-Microfoot
Aufbau
Single
FET-Typ
MOSFET P-Kanal, Metalloxid
Leistung max
780mW
Transistor-Typ
1 P-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
765pF @ 10V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
-
Rds-On-Max-Id-Vgs
44 mOhm @ 1.5A, 10V
Vgs-th-Max-Id
1.2V @ 250μA
Gate-Lade-Qg-Vgs
27nC @ 10V
Pd-Verlustleistung
900 mW
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
25 ns
Anstiegszeit
20 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
- 700 mA
Vds-Drain-Source-Breakdown-Voltage
- 20 V
Vgs-th-Gate-Source-Threshold-Voltage
- 0.5 V to - 1.2 V
Rds-On-Drain-Source-Widerstand
44 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
50 ns
Typische-Einschaltverzögerungszeit
27 ns
Qg-Gate-Ladung
9.5 nC
Vorwärts-Transkonduktanz-Min
10 S
Tags
SI848, SI84, SI8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT
***et
Trans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
***ronik
P-CH 20V 5,4A 36mOhm MICROFOOT
MicroFoot® Power MOSFETs
Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI8489EDB-T2-E1
DISTI # V72:2272_09216538		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
  • 1:$0.3521
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1TR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1749
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1CT-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1DKR-ND		Vishay SiliconixMOSFET P-CH 20V MICROFOOT
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1976
  • 500:$0.2557
  • 100:$0.3487
  • 10:$0.4650
  • 1:$0.5500
SI8489EDB-T2-E1
DISTI # 30195830		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R
RoHS: Compliant		4770
  • 3000:$0.1492
  • 1000:$0.1535
  • 500:$0.1906
  • 250:$0.2240
  • 100:$0.2266
  • 49:$0.2848
SI8489EDB-T2-E1
DISTI # SI8489EDB-T2-E1		Vishay IntertechnologiesTrans MOSFET P-CH 20V 5.4A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8489EDB-T2-E1)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1489
  • 6000:$0.1439
  • 12000:$0.1389
  • 18000:$0.1349
  • 30000:$0.1309
SI8489EDB-T2-E1
DISTI # 70617010		Vishay SiliconixSI8489EDB-T2-E1 P-channel MOSFET Transistor,4.3 A,20 V,4-Pin MICRO FOOT
RoHS: Compliant		0
  • 300:$0.2900
  • 600:$0.2600
  • 1500:$0.2300
  • 3000:$0.2100
SI8489EDB-T2-E1
DISTI # 78-SI8489EDB-T2-E1		Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		12622
  • 1:$0.4900
  • 10:$0.3710
  • 100:$0.2750
  • 500:$0.2260
  • 1000:$0.1750
  • 3000:$0.1710
SI8489EDB-T2-E1
DISTI # 8181438P		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 5.4A, RL2940
  • 60:£0.2550
  • 200:£0.2440
  • 400:£0.2220
  • 800:£0.2010
SI8489EDB-T2-E1
DISTI # C1S803604064229		Vishay IntertechnologiesMOSFETs4770
  • 250:$0.2240
  • 100:$0.2266
  • 25:$0.2848
  • 10:$0.2883
SI8489EDB-T2-E1Vishay IntertechnologiesMOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
RoHS: Compliant		Americas - 6000
    Bild Teil # Beschreibung
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1

    		 MOSFET -20V Vds 12V Vgs MICRO FOOT 1 x 1
    SI8489EDB-T2-E1

    Mfr.#: SI8489EDB-T2-E1

    OMO.#: OMO-SI8489EDB-T2-E1-VISHAY

    		 IGBT Transistors MOSFET -20V 44mOhm@10V 5.4A P-Ch G-III
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5500
    Menge eingeben:
    Der aktuelle Preis von SI8489EDB-T2-E1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,20 $
    0,20 $
    10
    0,19 $
    1,86 $
    100
    0,18 $
    17,67 $
    500
    0,17 $
    83,45 $
    1000
    0,16 $
    157,10 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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