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IXXH80N65B4H1

IXXH80N65B4H1
Mfr. #:
IXXH80N65B4H1
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXH80N65B4H1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXXH80N65B4H1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX4, XPT
Verpackung
Rohr
Gewichtseinheit
0.158733 oz
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-247 (IXXH)
Aufbau
Single
Leistung max
625W
Reverse-Recovery-Time-trr
150ns
Strom-Kollektor-Ic-Max
160A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
430A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
Schaltenergie
3.77mJ (on), 1.2mJ (off)
Gate-Gebühr
120nC
Td-ein-aus-25°C
38ns/120ns
Testbedingung
400V, 80A, 3 Ohm, 15V
Pd-Verlustleistung
625 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kollektor-Emitter-Sättigungsspannung
1.65 V
Kontinuierlicher Kollektorstrom-bei-25-C
160 A
Gate-Emitter-Leckstrom
100 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
80 A
Tags
IXXH8, IXXH, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXH80N65B4H1
DISTI # 30706002		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		69
  • 1000:$4.7616
  • 500:$5.4720
  • 250:$5.9520
  • 100:$6.5280
  • 50:$6.6048
  • 25:$7.2288
  • 10:$7.9392
  • 3:$8.8128
IXXH80N65B4H1
DISTI # 30292435		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 2:$8.5220
IXXH80N65B4H1
DISTI # IXXH80N65B4H1-ND		IXYS CorporationIGBT 650V 160A 625W TO247AD
RoHS: Compliant
Min Qty: 1
Container: Tube		3446In Stock
  • 1020:$4.9612
  • 510:$5.6963
  • 270:$6.2475
  • 120:$6.7988
  • 30:$7.5337
  • 10:$8.2690
  • 1:$9.1900
IXXH80N65B4H1
DISTI # V99:2348_15876179		IXYS CorporationTrans IGBT Chip N-CH 650V 160A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant		30
  • 1000:$4.5570
  • 500:$5.2280
  • 250:$5.7240
  • 100:$6.2660
  • 50:$6.5760
  • 25:$7.0130
  • 10:$7.7040
  • 1:$8.5399
IXXH80N65B4H1
DISTI # 747-IXXH80N65B4H1		IXYS CorporationIGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
RoHS: Compliant		533
  • 1:$9.1800
  • 10:$8.2700
  • 25:$7.5300
  • 50:$6.8800
  • 100:$6.8000
  • 250:$6.2000
  • 500:$5.7000
  • 1000:$4.9600
IXXH80N65B4H1
DISTI # 1258049		IXYS CorporationIGBT 80A 650V TO247AD, EA169
  • 60:£5.0900
  • 30:£5.1900
  • 10:£5.4400
  • 5:£5.7300
  • 1:£6.4600
IXXH80N65B4H1
DISTI # IXXH80N65B4H1		IXYS CorporationTransistor: IGBT,GenX4™,650V,80A,625W,TO247-346
  • 1:$7.2900
  • 3:$6.5600
  • 10:$5.8000
  • 30:$5.2100
IXXH80N65B4H1  9448
    Bild Teil # Beschreibung
    IXXH80N65B4D1

    Mfr.#: IXXH80N65B4D1

    OMO.#: OMO-IXXH80N65B4D1

    		 Discrete Semiconductor Modules Disc IGBT XPT-GenX4 TO-247AD
    IXXH80N65B4H1

    Mfr.#: IXXH80N65B4H1

    OMO.#: OMO-IXXH80N65B4H1

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4

    Mfr.#: IXXH80N65B4

    OMO.#: OMO-IXXH80N65B4

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4D1

    Mfr.#: IXXH80N65B4D1

    OMO.#: OMO-IXXH80N65B4D1-1190

    		 Neu und Original
    IXXH80N65B4D1/SGL160N60U

    Mfr.#: IXXH80N65B4D1/SGL160N60U

    OMO.#: OMO-IXXH80N65B4D1-SGL160N60U-1190

    		 Neu und Original
    IXXH80N65B4D1/SGL160N60UFD

    Mfr.#: IXXH80N65B4D1/SGL160N60UFD

    OMO.#: OMO-IXXH80N65B4D1-SGL160N60UFD-1190

    		 Neu und Original
    IXXH80N65B4H1

    Mfr.#: IXXH80N65B4H1

    OMO.#: OMO-IXXH80N65B4H1-IXYS-CORPORATION

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    IXXH80N65B4

    Mfr.#: IXXH80N65B4

    OMO.#: OMO-IXXH80N65B4-IXYS-CORPORATION

    		 IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    3000
    Menge eingeben:
    Der aktuelle Preis von IXXH80N65B4H1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,74 $
    6,74 $
    10
    6,40 $
    64,00 $
    100
    6,06 $
    606,29 $
    500
    5,73 $
    2 863,00 $
    1000
    5,39 $
    5 389,20 $
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