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IRFB7540PBF

IRFB7540PBF
Mfr. #:
IRFB7540PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N CH 60V 110A TO-220AB
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFB7540PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFB7540PBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IR
Produktkategorie
FETs - Einzeln
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
160 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
56 ns
Anstiegszeit
76 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
110 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Vgs-th-Gate-Source-Threshold-Voltage
3.7 V
Rds-On-Drain-Source-Widerstand
4.2 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
58 ns
Typische-Einschaltverzögerungszeit
12 ns
Qg-Gate-Ladung
88 nC
Vorwärts-Transkonduktanz-Min
110 S
Tags
IRFB754, IRFB75, IRFB7, IRFB, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop Japan
Trans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
***et
MOSFET, 60V, 110A, 5.1 MOHM, 88 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Infineon Automatic Opening Systems
Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Teil # Mfg. Beschreibung Aktie Preis
IRFB7540PBF
DISTI # V99:2348_13890771		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		45
  • 10000:$0.4935
  • 2500:$0.5484
  • 1000:$0.6092
  • 500:$0.7826
  • 100:$0.8312
  • 10:$1.0294
  • 1:$1.1685
IRFB7540PBF
DISTI # IRFB7540PBF-ND		Infineon Technologies AGMOSFET N CH 60V 110A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		3000In Stock
  • 1000:$0.8648
  • 500:$1.0716
  • 100:$1.3560
  • 10:$1.6920
  • 1:$1.9000
IRFB7540PBF
DISTI # 21006250		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		1155
  • 1250:$0.4944
  • 500:$0.5088
  • 250:$0.5328
  • 100:$0.5472
  • 50:$0.7056
IRFB7540PBF
DISTI # 30228375		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
RoHS: Compliant		45
  • 13:$1.0294
IRFB7540PBF
DISTI # SP001563988		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube (Alt: SP001563988)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 3850
  • 1:€0.7899
  • 10:€0.7019
  • 25:€0.6319
  • 50:€0.5739
  • 100:€0.5259
  • 500:€0.4859
  • 1000:€0.4509
IRFB7540PBF
DISTI # IRFB7540PBF		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin TO-220AB Tube - Rail/Tube (Alt: IRFB7540PBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.5409
  • 2000:$0.5219
  • 4000:$0.5029
  • 6000:$0.4859
  • 10000:$0.4769
IRFB7540PBF.
DISTI # 29AC7042		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:110A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.7V,Power Dissipation Pd:160W,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8940
  • 1000:$0.7050
  • 5000:$0.6260
  • 10000:$0.6020
IRFB7540PBFInfineon Technologies AGSingle N-Channel 60 V 5.1 mOhm 88 nC HEXFET Power Mosfet - TO-220-3
RoHS: Compliant		50Tube
  • 50:$0.8950
  • 100:$0.7450
  • 250:$0.7150
  • 500:$0.6950
  • 1250:$0.6700
IRFB7540PBF
DISTI # 942-IRFB7540PBF		Infineon Technologies AGMOSFET MOSFET N CH 60V 110A TO-220AB
RoHS: Compliant		1994
  • 1:$1.5500
  • 10:$1.3200
  • 100:$1.0200
  • 500:$0.8940
  • 1000:$0.7050
IRFB7540PBF
DISTI # 8208849P		Infineon Technologies AGMOSFET 60V 110A STRONGIRFET TO220AB, TU2400
  • 15:£1.0540
  • 50:£0.9980
  • 150:£0.7800
  • 800:£0.6940
IRFB7540PBF
DISTI # IRFB7540PBF		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,80A,160W,TO220AB145
  • 1:$1.0400
  • 3:$0.9200
  • 10:$0.7700
  • 50:$0.6800
IRFB7540PBFInternational Rectifier 
RoHS: Compliant		Europe - 600
    IRFB7540PBF
    DISTI # IRFB7540PBF    		Infineon Technologies AGN-Ch 60V 110A 160W 0,0051R TO220AB
    RoHS: Compliant    		100
    • 10:€0.8840
    • 50:€0.5840
    • 200:€0.4840
    • 500:€0.4660
    IRFB7540PBF
    DISTI # C1S327401067280    		Infineon Technologies AGTrans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube
    RoHS: Compliant    		1000
    • 1000:$0.6850
    • 200:$0.7520
    • 100:$0.8530
    • 50:$1.0000
    • 10:$1.2300
    • 1:$2.4100
    IRFB7540PBF
    DISTI # C1S322000489190    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		45
    • 10:$1.0294
    IRFB7540PBF
    DISTI # 2406517    		Infineon Technologies AGMOSFET, N CH, 60V, 110A, TO-220AB-3
    RoHS: Compliant    		0
    • 1:$2.4600
    • 10:$2.0900
    • 100:$1.6200
    • 500:$1.4200
    • 1000:$1.1200
    • 2000:$0.9910
    • 10000:$0.9690
    IRFB7540PBF
    DISTI # 2406517    		Infineon Technologies AGMOSFET, N CH, 60V, 110A, TO-220AB-3
    RoHS: Compliant    		0
    • 5:£1.0600
    • 25:£0.9820
    • 100:£0.7800
    • 250:£0.7320
    • 500:£0.6830
    IRFB7540PBF
    DISTI # XSKDRABS0006803    		Infineon Technologies AG 
    RoHS: Compliant    		2160
    • 1000:$0.8721
    • 2160:$0.8140
    Bild Teil # Beschreibung
    IRFB7437GPBF

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    IRFB7434PBF

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    OMO.#: OMO-IRFB7434PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N CH 40V 195A TO220
    IRFB7446GPBF

    Mfr.#: IRFB7446GPBF

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    		 MOSFET N CH 40V 120A TO220AB
    IRFB7530PBF

    Mfr.#: IRFB7530PBF

    OMO.#: OMO-IRFB7530PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N CH 60V 195A TO-220AB
    IRFB7540PBF

    Mfr.#: IRFB7540PBF

    OMO.#: OMO-IRFB7540PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N CH 60V 110A TO-220AB
    IRFB7740/SL7590

    Mfr.#: IRFB7740/SL7590

    OMO.#: OMO-IRFB7740-SL7590-1190

    		 Neu und Original
    IRFB7787PBF

    Mfr.#: IRFB7787PBF

    OMO.#: OMO-IRFB7787PBF-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 75V 83A TO220
    IRFB7537PBF

    Mfr.#: IRFB7537PBF

    OMO.#: OMO-IRFB7537PBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET MOSFET N CH 60V 173A TO-220AB
    IRFB7437PBF

    Mfr.#: IRFB7437PBF

    OMO.#: OMO-IRFB7437PBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC
    IRFB7730PBF

    Mfr.#: IRFB7730PBF

    OMO.#: OMO-IRFB7730PBF-INFINEON-TECHNOLOGIES

    		 IGBT Transistors MOSFET 75V Single N-Channel HEXFET Powe
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    5000
    Menge eingeben:
    Der aktuelle Preis von IRFB7540PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,72 $
    0,72 $
    10
    0,68 $
    6,80 $
    100
    0,64 $
    64,38 $
    500
    0,61 $
    304,00 $
    1000
    0,57 $
    572,30 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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