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SI4288DY-T1-GE3
SI4288DY-T1-GE3
Die Zustellung:
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HTML Datasheet:
SI4288DY-T1-GE3 DatasheetSI4288DY-T1-GE3 Datasheet (P4-P6)SI4288DY-T1-GE3 Datasheet (P7-P8)

SI4288DY-T1-GE3

Mfr. #:
SI4288DY-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 40V Vds 20V Vgs SO-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI4288DY-T1-GE3 Datenblatt
ECAD Model:

Verfügbarkeit

Aktie:
Available
Auf Bestellung:
1988
Menge eingeben:
Der aktuelle Preis von SI4288DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Menge
Stückpreis
ext. Preis
1
1,39 $
1,39 $
10
1,15 $
11,50 $
100
0,88 $
88,30 $
500
0,76 $
380,00 $
1000
0,60 $
599,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
9.2 A
Rds On - Drain-Source-Widerstand:
20 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
10 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SI4
Transistortyp:
2 N-Channel
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
35 S
Abfallzeit:
8 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
2500
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
16 ns
Typische Einschaltverzögerungszeit:
7 ns
Teil # Aliase:
SI4288DY-GE3
Gewichtseinheit:
0.017870 oz
Tags
SI4288, SI428, SI42, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET Array Dual N-CH 40V 9.2A 8-Pin SOIC T/R
***ical
Trans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:9.2A; On Resistance Rds(On):0.0165Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.2V Rohs Compliant: Yes
***nell
MOSFET, NN CH, W/D, 40V, 9.2A, SO8; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:40V; Module Configuration:Dual; On Resistance Rds(on):0.0165ohm; Power Dissipation Pd:3.1W
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI4288DY-T1-GE3
DISTI # V72:2272_09215547		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		117
  • 100:$0.8787
  • 25:$1.0268
  • 10:$1.1409
  • 1:$1.5129
SI4288DY-T1-GE3
DISTI # V36:1790_09215547		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		0
  • 2500000:$0.5454
  • 1250000:$0.5456
  • 250000:$0.5602
  • 25000:$0.5841
  • 2500:$0.5880
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		20634In Stock
  • 1000:$0.6489
  • 500:$0.8219
  • 100:$0.9950
  • 10:$1.2760
  • 1:$1.4300
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		20634In Stock
  • 1000:$0.6489
  • 500:$0.8219
  • 100:$0.9950
  • 10:$1.2760
  • 1:$1.4300
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 40V 9.2A 8SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		17500In Stock
  • 12500:$0.5376
  • 5000:$0.5586
  • 2500:$0.5880
SI4288DY-T1-GE3
DISTI # 32655952		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		5000
  • 2500:$0.5569
SI4288DY-T1-GE3
DISTI # 30667634		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R
RoHS: Compliant		117
  • 12:$1.5129
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 5000
  • 25000:€0.4979
  • 15000:€0.5209
  • 10000:€0.5889
  • 5000:€0.7259
  • 2500:€1.0129
SI4288DY-T1-GE3
DISTI # SI4288DY-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R (Alt: SI4288DY-T1-GE3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4288DY-T1-GE3
    DISTI # SI4288DY-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4288DY-T1-GE3)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 25000:$0.5128
    • 15000:$0.5270
    • 10000:$0.5420
    • 5000:$0.5650
    • 2500:$0.5822
    SI4288DY-T1-GE3
    DISTI # 70AC6505    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 7.4A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 70AC6505)
    RoHS: Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 500:$0.9510
    • 250:$1.0300
    • 100:$1.1100
    • 50:$1.2200
    • 25:$1.3400
    • 10:$1.4500
    • 1:$1.7500
    SI4288DY-T1-GE3
    DISTI # 65T1693    		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 9.2 A, 40 V, 0.0165 ohm, 10 V, 1.2 V0
    • 10000:$0.5080
    • 6000:$0.5200
    • 4000:$0.5400
    • 2000:$0.6000
    • 1000:$0.6600
    • 1:$0.6880
    SI4288DY-T1-GE3
    DISTI # 70AC6505    		Vishay IntertechnologiesMOSFET, DUAL N-CH, 40V, 9.2A, 150DEG C,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes2487
    • 500:$0.6160
    • 50:$0.6670
    • 100:$0.6670
    • 250:$0.6670
    • 1:$0.7280
    • 10:$0.7280
    • 25:$0.7280
    SI4288DY-T1-GE3.
    DISTI # 30AC0152    		Vishay IntertechnologiesTransistor Polarity:Dual N Channel,Continuous Drain Current Id:9.2A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0165ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.2V,Power Dissipation Pd:3.1W,Product Range:-RoHS Compliant: Yes0
    • 10000:$0.5080
    • 6000:$0.5200
    • 4000:$0.5400
    • 2000:$0.6000
    • 1000:$0.6600
    • 1:$0.6880
    SI4288DY-T1-GE3
    DISTI # 70459532    		Vishay Siliconix40 Volts 9.2 Amps 3.1 Watts
    RoHS: Compliant    		0
    • 2500:$0.8500
    • 5000:$0.8050
    SI4288DY-T1-GE3
    DISTI # 78-SI4288DY-T1-GE3    		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs SO-8
    RoHS: Compliant    		155
    • 1:$1.3900
    • 10:$1.1500
    • 100:$0.8830
    • 500:$0.7600
    • 1000:$0.5990
    • 2500:$0.5590
    • 5000:$0.5310
    • 10000:$0.5120
    SI4288DY-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs SO-8
    RoHS: Compliant    		Americas - 22500
      SI4288DY-T1-GE3
      DISTI # 2056718      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO82267
      • 500:£0.5870
      • 250:£0.6340
      • 100:£0.6810
      • 10:£0.9380
      • 1:£1.2200
      SI4288DY-T1-GE3
      DISTI # XSKDRABV0045272      		Vishay Intertechnologies 
      RoHS: Compliant      		7500 in Stock0 on Order
      • 7500:$0.6960
      • 2500:$0.7457
      SI4288DY-T1-GE3
      DISTI # 2056718      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO8
      RoHS: Compliant      		1290
      • 2500:$1.1300
      • 500:$1.1500
      • 100:$1.3300
      • 10:$1.7300
      • 1:$2.0900
      SI4288DY-T1-GE3
      DISTI # 2056718RL      		Vishay IntertechnologiesMOSFET, NN CH, W/D, 40V, 9.2A, SO8
      RoHS: Compliant      		0
      • 2500:$1.1300
      • 500:$1.1500
      • 100:$1.3300
      • 10:$1.7300
      • 1:$2.0900
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