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RN2906,LF(CT

RN2906,LF(CT
Mfr. #:
RN2906,LF(CT
Hersteller:
Toshiba
Beschreibung:
Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RN2906,LF(CT Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Toshiba
Produktkategorie:
Bipolartransistoren – vorgespannt
RoHS:
Y
Polarität des Transistors:
PNP
Typischer Eingangswiderstand:
4.7 kOhms
Typisches Widerstandsverhältnis:
0.1
Montageart:
SMD/SMT
Paket / Koffer:
SOT-363-6
DC-Kollektor/Basisverstärkung hfe Min:
80
Kollektor- Emitterspannung VCEO Max:
- 50 V
Kontinuierlicher Kollektorstrom:
- 100 mA
Pd - Verlustleistung:
200 mW
Serie:
RN2906
Verpackung:
Spule
Emitter- Basisspannung VEBO:
- 10 V
Marke:
Toshiba
Produktart:
BJTs – Bipolartransistoren – Vorgespannt
Werkspackungsmenge:
3000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.000212 oz
Tags
RN2906, RN290, RN29, RN2
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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
TRANS PREBIAS 2PNP 50V 0.2W US6
***
US6-PLN ACTIVE
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TRANS NPN/PNP PREBIAS 0.2W US6
***i-Key
TRANS NPN/PNP PREBIAS 0.2W US6
***S
French Electronic Distributor since 1988
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***ark
TRANSISTOR DUAL UM6 PNP/PNP; Transistor Type:General Purpose; Transistor Polarity:Dual PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:150mW; Min Hfe:80; ft, Typ:250MHz; Case ;RoHS Compliant: Yes
***nell
TRANSISTOR DUAL UM6 PNP/PNP; Digital Transistor Polarity: Dual PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMB10N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: -100mA; DC Current Gain hFE: 80hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 80; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz
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TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 40V; Power Dissipation Pd: 200mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 100; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal
Teil # Mfg. Beschreibung Aktie Preis
RN2906,LF
DISTI # RN2906LFCT-ND		Toshiba America Electronic ComponentsTRANS 2PNP PREBIAS 0.2W US6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5875In Stock
  • 1000:$0.0579
  • 500:$0.0852
  • 250:$0.0999
  • 100:$0.1590
  • 25:$0.2044
  • 10:$0.2840
  • 1:$0.3100
RN2906,LF(CT
DISTI # 757-RN2906LF(CT		Toshiba America Electronic ComponentsBipolar Transistors - Pre-Biased Bias Resistor Built-in transistor
RoHS: Compliant		0
  • 1:$0.4200
  • 10:$0.2310
  • 100:$0.0990
  • 1000:$0.0760
  • 3000:$0.0580
  • 9000:$0.0520
  • 24000:$0.0480
  • 45000:$0.0430
  • 99000:$0.0410
Bild Teil # Beschreibung
RN2906,LF

Mfr.#: RN2906,LF

OMO.#: OMO-RN2906-LF

 Bipolar Transistors - Pre-Biased US6-PLN
RN2906,LF(CT

Mfr.#: RN2906,LF(CT

OMO.#: OMO-RN2906-LF-CT-123

 Bipolar Transistors - Pre-Biased Bias Resistor Built-in transisto
RN2906,LF

Mfr.#: RN2906,LF

OMO.#: OMO-RN2906-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR

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Mfr.#: RN2906LFCT-ND

OMO.#: OMO-RN2906LFCT-ND-1190

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Mfr.#: RN2906LFTR-ND

OMO.#: OMO-RN2906LFTR-ND-1190

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OMO.#: OMO-RN2906-1190

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von RN2906,LF(CT dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,42 $
0,42 $
10
0,23 $
2,31 $
100
0,10 $
9,90 $
1000
0,08 $
76,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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