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R6004JNXC7G

R6004JNXC7G
Mfr. #:
R6004JNXC7G
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET NCH 600V 4A POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
R6004JNXC7G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
R6004JNXC7G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220FM-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
1.43 Ohms
Vgs th - Gate-Source-Schwellenspannung:
5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
10.5 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
35 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
PrestoMOS
Verpackung:
Rohr
Serie:
BM14270MUV-LB
Transistortyp:
1 N-Channel
Marke:
ROHM Halbleiter
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
24 ns
Typische Einschaltverzögerungszeit:
13 ns
Tags
R6004J, R6004, R600, R60
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
R60xx PrestoMOS™ High-Voltage MOSFETs
ROHM Semiconductor R60xx PrestoMOS™ High-Voltage MOSFETs incorporate fast recovery diodes to optimize board space while providing 600V in five package types. These third-generation metal-oxide semiconductor field-effect transistors are ideal for power supplies with integrated inverters. The devices' high-speed switching combined with an internal diode with high Reverse Recovery Time (trr) characteristics optimize efficiency and lower loss while contributing to smaller designs.
Teil # Mfg. Beschreibung Aktie Preis
R6004JNXC7G
DISTI # 32373964		ROHM SemiconductorR6004JNXC7G100
  • 100:$1.1845
  • 50:$1.4280
  • 11:$1.5555
R6004JNXC7G
DISTI # R6004JNXC7G-ND		ROHM SemiconductorR6004JNX IS A POWER MOSFET WITH
RoHS: Compliant
Min Qty: 1
Container: Tube		50In Stock
  • 2000:$0.9590
  • 100:$1.4591
  • 25:$1.7124
  • 10:$1.8150
  • 1:$2.0200
R6004JNXC7G
DISTI # C1S625901816343		ROHM SemiconductorMOSFETs
RoHS: Compliant		100
  • 100:$0.9290
  • 50:$1.1200
  • 10:$1.2200
  • 1:$1.9400
R6004JNXC7G
DISTI # 01AH7801		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-220FM,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:15V,Threshold Voltage Vgs:6V,Power Dissipation RoHS Compliant: Yes100
  • 5000:$0.8990
  • 2500:$0.9330
  • 1000:$1.0000
  • 500:$1.2000
  • 100:$1.3800
  • 10:$1.7300
  • 1:$2.0300
R6004JNXC7G
DISTI # 755-R6004JNXC7G		ROHM SemiconductorMOSFET NCH 600V 4A POWER
RoHS: Compliant		50
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.1900
  • 1000:$0.9930
  • 2500:$0.9240
  • 5000:$0.8900
R6004JNXC7GROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***80
  • 39:$1.7160
  • 12:$1.9500
  • 1:$3.1200
R6004JNXC7GROHM SemiconductorRoHS(ship within 1day)50
  • 1:$2.1700
  • 10:$1.6300
  • 50:$1.0800
  • 100:$0.8700
  • 500:$0.8100
  • 1000:$0.7800
R6004JNXC7G
DISTI # 3018852		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-220FM100
  • 500:£0.8420
  • 250:£0.9010
  • 100:£0.9570
  • 25:£1.1100
  • 5:£1.2400
R6004JNXC7G
DISTI # 3018852		ROHM SemiconductorMOSFET, N-CH, 4A, 600V, TO-220FM
RoHS: Compliant		100
  • 1000:$1.1800
  • 500:$1.4700
  • 250:$1.5900
  • 100:$1.7000
  • 25:$2.1800
  • 5:$2.3900
R6004JNXC7GROHM SemiconductorMOSFET NCH 600V 4A POWER
RoHS: Compliant		Americas -
    Bild Teil # Beschreibung
    R6004KNX

    Mfr.#: R6004KNX

    OMO.#: OMO-R6004KNX

    		 MOSFET Nch 600V 4A Si MOSFET
    R6004ENJTL

    Mfr.#: R6004ENJTL

    OMO.#: OMO-R6004ENJTL

    		 MOSFET 10V Drive Nch MOSFET
    R6004

    Mfr.#: R6004

    OMO.#: OMO-R6004-1190

    		 R6004 HALOGEN FREE 5.12 IN X 984 FT
    R6004JNJGTL

    Mfr.#: R6004JNJGTL

    OMO.#: OMO-R6004JNJGTL-1190

    		 R6004JNJ IS A POWER MOSFET WITH
    R6004JNXC7G

    Mfr.#: R6004JNXC7G

    OMO.#: OMO-R6004JNXC7G-1190

    		 R6004JNX IS A POWER MOSFET WITH
    R6004KNX

    Mfr.#: R6004KNX

    OMO.#: OMO-R6004KNX-ROHM-SEMI

    		 MOSFET N-CH 600V 4A TO220FM
    R6004CND

    Mfr.#: R6004CND

    OMO.#: OMO-R6004CND-1190

    		 Neu und Original
    R6004ENJ

    Mfr.#: R6004ENJ

    OMO.#: OMO-R6004ENJ-1190

    		 Neu und Original
    R6004JND3

    Mfr.#: R6004JND3

    OMO.#: OMO-R6004JND3-1190

    		 Neu und Original
    R6004PNDFRATL

    Mfr.#: R6004PNDFRATL

    OMO.#: OMO-R6004PNDFRATL-1190

    		 Neu und Original
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1985
    Menge eingeben:
    Der aktuelle Preis von R6004JNXC7G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,01 $
    2,01 $
    10
    1,71 $
    17,10 $
    100
    1,37 $
    137,00 $
    500
    1,19 $
    595,00 $
    1000
    0,99 $
    993,00 $
    2500
    0,92 $
    2 310,00 $
    5000
    0,89 $
    4 450,00 $
    10000
    0,86 $
    8 560,00 $
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