BSC670N25NSFDATMA1

Mfr. #:: BSC670N25NSFDATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSC670N25NSFDATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: BSC670N25NSFDATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TDSON-8

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 250 V

Id - Kontinuierlicher Drainstrom:: 24 A

Rds On - Drain-Source-Widerstand:: 59 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 2 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 30 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 150 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: OptiMOS

Verpackung:: Spule

Serie:: OptiMOS Fast Diode

Transistortyp:: 1 N-Channel

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 24 S

Abfallzeit:: 4 ns

Produktart:: MOSFET

Anstiegszeit:: 3.6 ns

Werkspackungsmenge:: 5000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 19 ns

Typische Einschaltverzögerungszeit:: 8 ns

Teil # Aliase:: BSC670N25NSFD SP001107234

Tags: BSC6, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC670N25NSFDATMA1 Mehr Informationen

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSC670N25NSFDATMA1 DISTI # BSC670N25NSFDATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 24A 8TDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$1.4199
BSC670N25NSFDATMA1 DISTI # BSC670N25NSFDATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 24A 8TDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.5749 500:$1.8674 100:$2.3062 10:$2.8120 1:$3.1500
BSC670N25NSFDATMA1 DISTI # BSC670N25NSFDATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 24A 8TDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.5749 500:$1.8674 100:$2.3062 10:$2.8120 1:$3.1500
BSC670N25NSFDATMA1 DISTI # BSC670N25NSFDATMA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 19A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC670N25NSFDATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.3900 10000:$1.2900 20000:$1.2900 30000:$1.1900 50000:$1.1900
BSC670N25NSFDATMA1 DISTI # 24AC4563	Infineon Technologies AG	MOSFET, N-CH, 250V, 24A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.059ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	0	1:$2.9300 10:$2.4900 25:$2.3200 50:$2.1600 100:$1.9900 250:$1.8700 500:$1.7400 1000:$1.4400
BSC670N25NSFDATMA1 DISTI # 726-BSC670N25NSFDATM	Infineon Technologies AG	MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant	0	1:$2.9300 10:$2.4900 100:$1.9900 500:$1.7400 1000:$1.4400 2500:$1.3500 5000:$1.3000
BSC670N25NSFDATMA1 DISTI # 2770034	Infineon Technologies AG	MOSFET, N-CH, 250V, 24A, TDSON RoHS: Compliant	0	1:£2.8300 10:£2.2400 100:£1.8400 250:£1.6700 500:£1.4900
BSC670N25NSFDATMA1 DISTI # 2770034	Infineon Technologies AG	MOSFET, N-CH, 250V, 24A, TDSON RoHS: Compliant	0	1:$5.0200 10:$4.4900 100:$3.6800 500:$2.9800 1000:$2.5200

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	Mfr.#: STPS6M100SF OMO.#: OMO-STPS6M100SF-STMICROELECTRONICS	100V POWER SCHOTTKY RECTIFIER
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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von BSC670N25NSFDATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,92 $~~; ~~2,92 $~~

10: ~~2,48 $~~; ~~24,80 $~~

100: ~~1,98 $~~; ~~198,00 $~~

500: ~~1,73 $~~; ~~865,00 $~~

1000: ~~1,44 $~~; ~~1 440,00 $~~

2500: ~~1,34 $~~; ~~3 350,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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BSC670N25NSFDATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes