FGP5N60LS

Mfr. #:: FGP5N60LS
Hersteller:: ON Semiconductor / Fairchild
Beschreibung:: IGBT Transistors 600V/5A Field Stop Low Vcesat
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FGP5N60LS Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: FGP5N60LS Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: ON Semiconductor

Produktkategorie:: IGBT-Transistoren

RoHS:: Y

Technologie:: Si

Paket / Koffer:: TO-220-3

Montageart:: Durchgangsloch

Kollektor- Emitterspannung VCEO Max:: 600 V

Kollektor-Emitter-Sättigungsspannung:: 1.8 V

Maximale Gate-Emitter-Spannung:: 20 V

Kontinuierlicher Kollektorstrom bei 25 C:: 10 A

Pd - Verlustleistung:: 83 W

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 125 C

Serie:: FGP5N60LS

Verpackung:: Rohr

Marke:: ON Semiconductor / Fairchild

Gate-Emitter-Leckstrom:: 400 nA

Produktart:: IGBT-Transistoren

Werkspackungsmenge:: 800

Unterkategorie:: IGBTs

Gewichtseinheit:: 0.063493 oz

Tags: FGP5N60L, FGP5N, FGP5, FGP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FGP5N60LS Beschreibung

***ark: FIELD STOP IGBT, 600V, 10A, 3-TO-220; Transistor Type:IGBT; DC Collector Current

***Yang: Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube

***r Electronics: Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.

***nell: IGBT,N CH,600V,10A,T220AB; Transistor Type:IGBT; DC Collector Current:10A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:83W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:83W

***p One Stop Global: Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ernational Rectifier: 600V UltraFast 10-30 kHz IGBT in a TO-220AB package

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.8 V Current release time: 13.2 ns Power dissipation: 90 W

***ment14 APAC: IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:90W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Fall Time Max:18ns; Fall Time tf:18ns; Package / Case:TO-220AB; Power Dissipation Max:90W; Power Dissipation Pd:90W; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Pulsed Current Icm:26A; Rise Time:17ns; SMD Marking:IRGB6B60K; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ical: Trans IGBT Chip N-CH 600V 11A 3-Pin(3+Tab) TO-220AB Tube

***S.I.T. Europe - USA - Asia: Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, 600V, 11A, TO-220AB-3; DC Collector Current: 11A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 58W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220AB; No. of Pins: 3P

***p One Stop: Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IRG4BC20KDPBF Series 600 V 9 A N-Channel UltraFast IGBT - TO-220AB

***ineon SCT: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE, TO220COPAK-3, RoHS

***ernational Rectifier: 600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package

*** Stop Electro: Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***trelec: IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.8 V Current release time: 160 ns Power dissipation: 60 W

***ment14 APAC: IGBT, N, 600V, 16A, TO-220AB; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:16A; Package / Case:TO-220AB; Power Dissipation Max:60W; Power Dissipation Pd:60W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 34A 125000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 34A 125W TO220AB

***ure Electronics: HGTP7N60A4 Series 600 V 34 A Flange Mount SMPS N-Channel IGBT-TO-220AB

***r Electronics: Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, TO-220; Transistor Type:IGBT; DC Collector Current:34A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:125W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:34A; Current Temperature:25°C; Fall Time tf:45ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220AB; Pin Format:GCE; Power Dissipation Max:125W; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulsed Current Icm:56A; Rise Time:11ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***rchild Semiconductor: The HGTP7N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

***ical: Trans IGBT Chip N=-CH 390V 21A 150000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: ISL9V3040P3 Series 430 V 21 A Flange Mount N-Channel Ignition IGBT - TO-220AB

***ter Electronics: TO-220AB, SINGLE, N-CH, 400V, 300MJ ECOSPARK IGNITION IGBT

*** Stop Electro: Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, SINGLE, 400V, 21A, TO-220AB-3; DC Collector Current:21A; Emitter Saturation Voltage Vce(on):1.25V; Power Dissipation Pd:150W;

***nell: IGBT N CH IGNTN 400V 21A TO220AB; Transistor Type:IGBT; Max Voltage Vce Sat:1.6V; Operating Temperature Range:-40°C to +175°C; Case Style:TO-220; Max Current Ic Continuous a:10A; Power Dissipation:150W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:420V

***rchild Semiconductor: The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO-220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.

FGP5N60LS Mehr Informationen

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FGP5N60LS DISTI # V99:2348_06359429	ON Semiconductor	600V/5A FIELD STOP IGBT / LOW	781	2500:$0.6054 1000:$0.6482 500:$0.7934 100:$0.8794 10:$1.0851 1:$1.3447
FGP5N60LS DISTI # V36:1790_06359429	ON Semiconductor	600V/5A FIELD STOP IGBT / LOW	0
FGP5N60LS DISTI # FGP5N60LS-ND	ON Semiconductor	IGBT 600V 10A 83W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	774In Stock	5600:$0.6258 3200:$0.6571 800:$0.8918 100:$1.0795 25:$1.3140 10:$1.3850 1:$1.5500
FGP5N60LS DISTI # 25845345	ON Semiconductor	600V/5A FIELD STOP IGBT / LOW	781	2500:$0.6054 1000:$0.6482 500:$0.7934 100:$0.8794 11:$1.0851
FGP5N60LS DISTI # FGP5N60LS	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube (Alt: FGP5N60LS) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.5659 500:€0.6099 100:€0.6599 50:€0.7199 25:€0.7929 10:€0.8809 1:€0.9909
FGP5N60LS DISTI # FGP5N60LS	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FGP5N60LS) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	8000:$0.5509 4800:$0.5649 3200:$0.5729 1600:$0.5799 800:$0.5839
FGP5N60LS DISTI # FGP5N60LS	ON Semiconductor	Trans IGBT Chip N-CH 600V 10A 3-Pin(3+Tab) TO-220AB Tube - Bulk (Alt: FGP5N60LS) Min Qty: 500 Container: Bulk	Americas - 0	5000:$0.6169 2500:$0.6319 1500:$0.6409 1000:$0.6489 500:$0.6529
FGP5N60LS DISTI # 41T0521	ON Semiconductor	IGBT Single Transistor, General Purpose, 10 A, 600 V, 83 W, 600 V, TO-220AB, 3 RoHS Compliant: Yes	261	10000:$0.6870 2500:$0.7090 1000:$0.7860 500:$0.9660 100:$1.0800 10:$1.3800 1:$1.5900
FGP5N60LS DISTI # 512-FGP5N60LS	ON Semiconductor	IGBT Transistors 600V/5A Field Stop Low Vcesat RoHS: Compliant	622	1:$1.4600 10:$1.2500 100:$0.9620 500:$0.8500 1000:$0.6710 2500:$0.5950 10000:$0.5730
FGP5N60LS	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	20047	1000:$0.6600 500:$0.6900 100:$0.7200 25:$0.7500 1:$0.8100
FGP5N60LS DISTI # 1885743	ON Semiconductor	IGBT,N CH,600V,10A,T220AB RoHS: Compliant	261	10000:$0.8820 2500:$0.9150 1000:$1.0400 500:$1.3100 100:$1.4800 10:$1.9200 1:$2.2500
FGP5N60LS DISTI # 1885743	ON Semiconductor	IGBT,N CH,600V,10A,T220AB	296	500:£0.5830 250:£0.6220 100:£0.6610 25:£0.8650 5:£1.0600

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Verfügbarkeit

Aktie:: 621
Auf Bestellung:: 2604
Menge eingeben:

Der aktuelle Preis von FGP5N60LS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~1,46 $~~; ~~1,46 $~~

10: ~~1,25 $~~; ~~12,50 $~~

100: ~~0,96 $~~; ~~96,20 $~~

500: ~~0,85 $~~; ~~425,00 $~~

1000: ~~0,67 $~~; ~~671,00 $~~

2500: ~~0,60 $~~; ~~1 487,50 $~~

10000: ~~0,57 $~~; ~~5 730,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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FGP5N60LS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes