DMN62D0UWQ-7

DMN62D0UWQ-7
Mfr. #:
DMN62D0UWQ-7
Hersteller:
Diodes Incorporated
Beschreibung:
MOSFET MOSFET BVDSS: 31V-40V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DMN62D0UWQ-7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
DMN62D0UWQ-7 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Eingebaute Dioden
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-323-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
340 mA
Rds On - Drain-Source-Widerstand:
3 Ohms
Vgs th - Gate-Source-Schwellenspannung:
500 mV
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
500 pC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
470 mW
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Eingebaute Dioden
Abfallzeit:
12.5 ns
Produktart:
MOSFET
Anstiegszeit:
2.5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
22.6 ns
Typische Einschaltverzögerungszeit:
2.4 ns
Tags
DMN62D0UW, DMN62D0U, DMN62D0, DMN62, DMN6, DMN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.
Bild Teil # Beschreibung
DMN62D1LFD-7

Mfr.#: DMN62D1LFD-7

OMO.#: OMO-DMN62D1LFD-7

MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFB-7B

Mfr.#: DMN62D1LFB-7B

OMO.#: OMO-DMN62D1LFB-7B

MOSFET MOSFET BVDSS: 41V~60V X1-DFN1006-3 T&R 10K
DMN62D0UDW-7

Mfr.#: DMN62D0UDW-7

OMO.#: OMO-DMN62D0UDW-7

MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN62D0SFD-7

Mfr.#: DMN62D0SFD-7

OMO.#: OMO-DMN62D0SFD-7

MOSFET MOSFET BVDSS
DMN62D0UT-7

Mfr.#: DMN62D0UT-7

OMO.#: OMO-DMN62D0UT-7

MOSFET N-Ch Enh Mode Fet 60V 20Vgss 0.47W
DMN62D0U-13

Mfr.#: DMN62D0U-13

OMO.#: OMO-DMN62D0U-13

MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN62D1LFD-13

Mfr.#: DMN62D1LFD-13

OMO.#: OMO-DMN62D1LFD-13

MOSFET 60V N-Ch Enh FET 20Vgs 0.4A 32pF
DMN62D1LFDQ-7

Mfr.#: DMN62D1LFDQ-7

OMO.#: OMO-DMN62D1LFDQ-7

MOSFET 2N7002 Family
DMN62D0LFB-7B

Mfr.#: DMN62D0LFB-7B

OMO.#: OMO-DMN62D0LFB-7B-DIODES

MOSFET N-CH 60V 100MA 3-DFN
DMN62D0LFD-7

Mfr.#: DMN62D0LFD-7

OMO.#: OMO-DMN62D0LFD-7-DIODES

Trans MOSFET N-CH 60V 0.31A Automotive 3-Pin X1-DFN EP T/R
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5000
Menge eingeben:
Der aktuelle Preis von DMN62D0UWQ-7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,35 $
0,35 $
10
0,23 $
2,29 $
100
0,10 $
9,80 $
1000
0,08 $
75,00 $
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