IRFR9N20DTRPBF

IRFR9N20DTRPBF
Mfr. #:
IRFR9N20DTRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFR9N20DTRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFR9N20DTRPBF DatasheetIRFR9N20DTRPBF Datasheet (P4-P6)IRFR9N20DTRPBF Datasheet (P7-P9)IRFR9N20DTRPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
9.4 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
18 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
86 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Höhe:
2.3 mm
Länge:
6.5 mm
Transistortyp:
1 N-Channel
Typ:
Smps-MOSFET
Breite:
6.22 mm
Marke:
Infineon / IR
Abfallzeit:
9.3 ns
Produktart:
MOSFET
Anstiegszeit:
16 ns
Werkspackungsmenge:
2000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
13 ns
Typische Einschaltverzögerungszeit:
7.5 ns
Teil # Aliase:
SP001552256
Gewichtseinheit:
0.139332 oz
Tags
IRFR9N20DT, IRFR9N, IRFR9, IRFR, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.38 Ohm 18 nC HEXFET® Power Mosfet - TO-252AA
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
***(Formerly Allied Electronics)
MOSFET, 200V, 9.4A, 380 MOHM, 18 NC QG, D-PAK | Infineon IRFR9N20DTRLPBF
***icontronic
Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***nell
MOSFET, N, 200V, 9.4A, D-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.4A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; Power
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
***i-Key
MOSFET N-CH 200V 11A DPAK
***ser
MOSFETs 200V NCh PowerMOSFET UltraFET
***el Nordic
Contact for details
***et
TRANS MOSFET N-CH 200V 7A 3PIN DPAK
***ser
MOSFETs 200V N-Channel QFET
***emi
Single N-Channel Power MOSFET 250V, 10A, 420mΩ
***ure Electronics
NDDP010N25AZ Series 250 V 10 A 420 mOhm N-Channel Power Mosfet - DPAK(TP-FA)
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.32Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V Rohs Compliant: Yes
*** Stop Electro
Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***roFlash
Trans MOSFET N-CH 150V 8.3A Automotive 3-Pin(2+Tab) DPAK T/R
***ark
Mosfet, N-Ch, 150V, 8.3A, To-252 Rohs Compliant: Yes
***des Inc SCT
150V N-CHANNEL ENHANCEMENT MODE MOSFET, 150 V, RoHS
***et
MOSFET BVDSS: 101V~250V TO252 T&R 2.5K
***i-Key
MOSFET N-CH 150V 11.8A DPAK
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
***ser
MOSFETs 150V N-Channel QFET
Teil # Mfg. Beschreibung Aktie Preis
IRFR9N20DTRPBF
DISTI # V72:2272_13891573
Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
4000
  • 3000:$0.3817
  • 1000:$0.4045
  • 500:$0.4929
  • 250:$0.5476
  • 100:$0.5537
  • 25:$0.6566
  • 10:$0.6879
  • 1:$0.7803
IRFR9N20DTRPBF
DISTI # IRFR9N20DTRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 9.4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3401In Stock
  • 1000:$0.5311
  • 500:$0.6727
  • 100:$0.8675
  • 10:$1.0980
  • 1:$1.2400
IRFR9N20DTRPBF
DISTI # IRFR9N20DTRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 9.4A DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3401In Stock
  • 1000:$0.5311
  • 500:$0.6727
  • 100:$0.8675
  • 10:$1.0980
  • 1:$1.2400
IRFR9N20DTRPBF
DISTI # IRFR9N20DTRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 9.4A DPAK
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
2000In Stock
  • 2000:$0.4813
IRFR9N20DTRPBF
DISTI # 29474750
Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
4000
  • 3000:$0.3817
  • 1000:$0.4045
  • 500:$0.4929
  • 250:$0.5476
  • 100:$0.5537
  • 25:$0.6626
  • 21:$0.6879
IRFR9N20DTRPBF
DISTI # 30719919
Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
RoHS: Compliant
2000
  • 12000:$0.3112
  • 8000:$0.3205
  • 4000:$0.3330
  • 2000:$0.3455
IRFR9N20DTRPBF
DISTI # IRFR9N20DTRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR9N20DTRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 2000
  • 2000:$0.3599
  • 4000:$0.3469
  • 8000:$0.3339
  • 12000:$0.3229
  • 20000:$0.3169
IRFR9N20DTRPBF
DISTI # IRFR9N20DTRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR9N20DTRPBF)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel
Asia - 0
    IRFR9N20DTRPBF
    DISTI # 13AC9146
    Infineon Technologies AGMOSFET, N-CH, 200V, 9.4A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:9.4A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5.5V,Power RoHS Compliant: Yes144
    • 1:$1.0300
    • 10:$0.8750
    • 25:$0.8070
    • 50:$0.7400
    • 100:$0.6720
    • 250:$0.6330
    • 500:$0.5940
    • 1000:$0.4690
    IRFR9N20DTRPBF
    DISTI # 70019021
    Infineon Technologies AGIRFR9N20DTRPBF N-channel MOSFET Transistor,9.4 A,200 V,3+Tab-Pin DPAK
    RoHS: Compliant
    0
    • 2000:$1.1000
    IRFR9N20DTRPBF
    DISTI # 942-IRFR9N20DTRPBF
    Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
    RoHS: Compliant
    5232
    • 1:$1.0300
    • 10:$0.8750
    • 100:$0.6720
    • 500:$0.5940
    • 1000:$0.4690
    IRFR9N20DTRPBF
    DISTI # 9155036P
    Infineon Technologies AGMOSFET N-CHANNEL HEXFET 200V 9.4A D-PAK, RL1860
    • 100:£0.2610
    IRFR9N20DTRPBF
    DISTI # C1S322000494411
    Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    4000
    • 250:$0.5476
    • 100:$0.5537
    • 25:$0.6566
    • 10:$0.6879
    IRFR9N20DTRPBF
    DISTI # C1S322000494420
    Infineon Technologies AGTrans MOSFET N-CH 200V 9.4A 3-Pin(2+Tab) DPAK T/R
    RoHS: Compliant
    4000
    • 2000:$0.5590
    IRFR9N20DTRPBF
    DISTI # 2725976
    Infineon Technologies AGMOSFET, N-CH, 200V, 9.4A, TO-252AA
    RoHS: Compliant
    234
    • 5:£0.5270
    • 25:£0.4360
    • 100:£0.3910
    • 250:£0.3610
    • 500:£0.3370
    IRFR9N20DTRPBF
    DISTI # 2725976
    Infineon Technologies AGMOSFET, N-CH, 200V, 9.4A, TO-252AA
    RoHS: Compliant
    144
    • 1:$1.9800
    • 10:$1.7600
    • 100:$1.3900
    • 500:$1.0800
    • 1000:$0.8470
    Bild Teil # Beschreibung
    TC428EOA713

    Mfr.#: TC428EOA713

    OMO.#: OMO-TC428EOA713

    Gate Drivers 1.5A Dual H-Speed
    MMBT4401-7-F

    Mfr.#: MMBT4401-7-F

    OMO.#: OMO-MMBT4401-7-F

    Bipolar Transistors - BJT 40V 300mW
    TPS3711DDCR

    Mfr.#: TPS3711DDCR

    OMO.#: OMO-TPS3711DDCR

    Supervisory Circuits Supervisory
    NHP220SFT3G

    Mfr.#: NHP220SFT3G

    OMO.#: OMO-NHP220SFT3G

    Rectifiers PUF 2A 200V IN SOD123FL
    LTV-217-C-G

    Mfr.#: LTV-217-C-G

    OMO.#: OMO-LTV-217-C-G

    Transistor Output Optocouplers Optocoupler, AC 600%, 5KV, 4 PIN
    LTV-217-C-G

    Mfr.#: LTV-217-C-G

    OMO.#: OMO-LTV-217-C-G-LITE-ON

    Transistor Output Optocouplers Optocoupler, AC 600%, 5KV, 4 PIN
    TC428EOA713

    Mfr.#: TC428EOA713

    OMO.#: OMO-TC428EOA713-MICROCHIP-TECHNOLOGY

    Gate Drivers 1.5A Dual H-Speed
    UWD1H221MCL1GS

    Mfr.#: UWD1H221MCL1GS

    OMO.#: OMO-UWD1H221MCL1GS-NICHICON

    Aluminum Electrolytic Capacitors - SMD 50volts 220uF 10x10
    TPS3711DDCR

    Mfr.#: TPS3711DDCR

    OMO.#: OMO-TPS3711DDCR-TEXAS-INSTRUMENTS

    Supervisory Circuits Supervisory
    NHP220SFT3G

    Mfr.#: NHP220SFT3G

    OMO.#: OMO-NHP220SFT3G-ON-SEMICONDUCTOR

    Rectifiers PUF 2A 200V IN SOD123FL
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von IRFR9N20DTRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,02 $
    1,02 $
    10
    0,88 $
    8,75 $
    100
    0,67 $
    67,20 $
    500
    0,59 $
    297,00 $
    1000
    0,47 $
    469,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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