OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

SI5935CDC-T1-GE3

SI5935CDC-T1-GE3
Mfr. #:
SI5935CDC-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI5935CDC-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI5935CDC-T1-GE3 DatasheetSI5935CDC-T1-GE3 Datasheet (P4-P6)SI5935CDC-T1-GE3 Datasheet (P7-P9)SI5935CDC-T1-GE3 Datasheet (P10-P11)
ECAD Model:
Mehr Informationen:
SI5935CDC-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
ChipFET-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
4 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
400 mV
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
11 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
3.1 W
Aufbau:
Dual
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.1 mm
Länge:
3.05 mm
Serie:
SI54
Transistortyp:
2 P-Channel
Breite:
1.65 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
9.5 S
Abfallzeit:
6 ns
Produktart:
MOSFET
Anstiegszeit:
32 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
25 ns
Typische Einschaltverzögerungszeit:
10 ns
Teil # Aliase:
SI5935CDC-GE3 SIR814DP-T1-GE3
Gewichtseinheit:
0.002998 oz
Tags
SI5935CDC-T1-G, SI5935CDC-T1, SI5935CDC-T, SI5935C, SI5935, SI593, SI59, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI5935CDC-T1-GE3 Dual P-channel MOSFET Transistor; 3.8 A; 20V; 8-Pin 1206 ChipFET
***ure Electronics
Dual P-Channel 20 V 100 mO 11 nC Surface Mount Mosfet - 1206-8 ChipFET
***et Europe
Transistor MOSFET Array Dual P-CH 20V 4A 8-Pin Chip FET T/R
***ark
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; On Resistance Rds(On):0.083Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V Rohs Compliant: No
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Teil # Mfg. Beschreibung Aktie Preis
SI5935CDC-T1-GE3
DISTI # V72:2272_09216253		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R
RoHS: Compliant		3000
  • 3000:$0.1940
  • 1000:$0.1990
  • 500:$0.2497
  • 250:$0.3060
  • 100:$0.3187
  • 25:$0.4237
  • 10:$0.4709
  • 1:$0.6061
SI5935CDC-T1-GE3
DISTI # V36:1790_09216253		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R
RoHS: Compliant		0
  • 3000:$0.1636
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		27328In Stock
  • 1000:$0.2206
  • 500:$0.2855
  • 100:$0.3634
  • 10:$0.4870
  • 1:$0.5700
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		27328In Stock
  • 1000:$0.2206
  • 500:$0.2855
  • 100:$0.3634
  • 10:$0.4870
  • 1:$0.5700
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 4A 1206-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		24000In Stock
  • 30000:$0.1613
  • 15000:$0.1701
  • 6000:$0.1827
  • 3000:$0.1953
SI5935CDC-T1-GE3
DISTI # 32739564		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R
RoHS: Compliant		3000
  • 42:$0.6061
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R (Alt: SI5935CDC-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 150000:$0.1568
  • 75000:$0.1595
  • 30000:$0.1622
  • 15000:$0.1680
  • 9000:$0.1743
  • 6000:$0.1810
  • 3000:$0.1882
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R (Alt: SI5935CDC-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1899
  • 18000:€0.2049
  • 12000:€0.2219
  • 6000:€0.2579
  • 3000:€0.3779
SI5935CDC-T1-GE3
DISTI # SI5935CDC-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5935CDC-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.1538
  • 18000:$0.1581
  • 12000:$0.1626
  • 6000:$0.1695
  • 3000:$0.1747
SI5935CDC-T1-GE3
DISTI # 05AC9501		Vishay IntertechnologiesTrans MOSFET P-CH 20V 3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: 05AC9501)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 1:$0.2370
SI5935CDC-T1-GE3
DISTI # 69W7212		Vishay IntertechnologiesMOSFET, DUAL P CHANNEL, -20V, -4A, CHIPFET-8,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:-1.8V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 2500:$0.2070
  • 1000:$0.2610
  • 500:$0.2970
  • 250:$0.3460
  • 100:$0.3890
  • 50:$0.4400
  • 25:$0.4830
  • 1:$0.5380
SI5935CDC-T1-GE3
DISTI # 05AC9501		Vishay IntertechnologiesMOSFET, DUAL P-CH, -20V, -4A, CHIPFET,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,RoHS Compliant: Yes12000
  • 1:$0.2470
  • 3000:$0.2470
SI5935CDC-T1-GE3.
DISTI # 26AC3339		Vishay IntertechnologiesTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-4A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.083ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:3.1W RoHS Compliant: No0
  • 1:$0.2470
  • 3000:$0.2470
SI5935CDC-T1-GE3
DISTI # 70616992		Vishay SiliconixSI5935CDC-T1-GE3 Dual P-channel MOSFET Transistor,3.8 A,20V,8-Pin 1206 ChipFET
RoHS: Compliant		0
  • 500:$0.3630
  • 1500:$0.3220
  • 3000:$0.2910
  • 9000:$0.2490
SI5935CDC-T1-GE3
DISTI # 78-SI5935CDC-T1-GE3		Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
RoHS: Compliant		11330
  • 1:$0.5600
  • 10:$0.4330
  • 100:$0.3210
  • 500:$0.2640
  • 1000:$0.2040
  • 3000:$0.1850
  • 6000:$0.1730
  • 9000:$0.1620
  • 24000:$0.1530
SI5935CDC-T1-GE3
DISTI # 8181352P		Vishay IntertechnologiesTRANS MOSFET P-CH 20V 3.1A, RL14300
  • 200:£0.2500
SI5935CDCT1GE3Vishay IntertechnologiesSmall Signal Field-Effect Transistor, 4A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		47750
    SI5935CDC-T1-GE3
    DISTI # 2679697    		Vishay IntertechnologiesMOSFET, DUAL P-CH, -20V, -4A, CHIPFET
    RoHS: Compliant    		3000
    • 3000:$0.2930
    SI5935CDC-T1-GE3
    DISTI # 2646387    		Vishay IntertechnologiesMOSFET, DUAL P-CH, -20V, -4A, CHIPFET
    RoHS: Compliant    		0
    • 3000:$0.3030
    • 1000:$0.3090
    • 500:$0.3990
    • 100:$0.4850
    • 10:$0.6540
    • 1:$0.8440
    SI5935CDC-T1-GE3Vishay IntertechnologiesMOSFET -20V Vds 8V Vgs 1206-8 ChipFET
    RoHS: Compliant    		Americas - 12000
    • 3000:$0.1750
    • 6000:$0.1660
    • 12000:$0.1610
    • 18000:$0.1570
    SI5935CDC-T1-GE3
    DISTI # 2679697    		Vishay IntertechnologiesMOSFET, DUAL P-CH, -20V, -4A, CHIPFET0
    • 9000:£0.1530
    • 3000:£0.1560
    Bild Teil # Beschreibung
    ADA4661-2ACPZ-R7

    Mfr.#: ADA4661-2ACPZ-R7

    OMO.#: OMO-ADA4661-2ACPZ-R7

    		 Precision Amplifiers 18V LowPower RRIO Precision CmosAmp
    SMMBT3906LT3G

    Mfr.#: SMMBT3906LT3G

    OMO.#: OMO-SMMBT3906LT3G

    		 Bipolar Transistors - BJT SS GP XSTR SPCL TR
    STM32F030CCT6

    Mfr.#: STM32F030CCT6

    OMO.#: OMO-STM32F030CCT6

    		 ARM Microcontrollers - MCU Mainstream ARM Cortex-M0 Value line MCU with 256 Kbytes Flash, 48 MHz CPU
    STM32F427VIT6

    Mfr.#: STM32F427VIT6

    OMO.#: OMO-STM32F427VIT6

    		 ARM Microcontrollers - MCU 32B ARM Cortex-M4 2Mb Flash 168MHz CPU
    STM32F100C8T6B

    Mfr.#: STM32F100C8T6B

    OMO.#: OMO-STM32F100C8T6B

    		 ARM Microcontrollers - MCU 32BIT CORTEX M3 48PINS 64KB
    MCP1811AT-033/TT

    Mfr.#: MCP1811AT-033/TT

    OMO.#: OMO-MCP1811AT-033-TT

    		 LDO Voltage Regulators Ultra Low Iq LDO
    MIC5332-SSYMT-T5

    Mfr.#: MIC5332-SSYMT-T5

    OMO.#: OMO-MIC5332-SSYMT-T5

    		 LDO Voltage Regulators Dual 300mA micropower ULDO, with POR
    ADA4661-2ACPZ-R7

    Mfr.#: ADA4661-2ACPZ-R7

    OMO.#: OMO-ADA4661-2ACPZ-R7-ANALOG-DEVICES-INC-ADI

    		 Precision Amplifiers 18V LowPower RRIO Precision CmosAmp
    SMMBT3906LT3G

    Mfr.#: SMMBT3906LT3G

    OMO.#: OMO-SMMBT3906LT3G-ON-SEMICONDUCTOR

    		 Bipolar Transistors - BJT SS GP XSTR SPCL TR
    MIC5332-SSYMT-T5

    Mfr.#: MIC5332-SSYMT-T5

    OMO.#: OMO-MIC5332-SSYMT-T5-MICROCHIP-TECHNOLOGY

    		 LDO Voltage Regulators
    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von SI5935CDC-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,56 $
    0,56 $
    10
    0,43 $
    4,33 $
    100
    0,32 $
    32,10 $
    500
    0,26 $
    132,00 $
    1000
    0,20 $
    204,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
    Beginnen mit
    Neueste Produkte
    • -12 V and -20 V P-Channel Gen III MOSFETs
      -12 V and -20 V P-Channel Gen III MOSFETs
      Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
    • DG2788A Dual DPDT / Quad SPDT Analog Switch
      DG2788A Dual DPDT / Quad SPDT Analog Switch
      Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
    • Smart Load Switches
      Smart Load Switches
      Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
    • SUM70101EL 100 V P-Channel MOSFET
      SUM70101EL 100 V P-Channel MOSFET
      Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
    • Compare SI5935CDC-T1-GE3
      Compare SI5935CDC-T1-GE3
      SI5935CDCT1G vs SI5935CDCT1GE3 vs SI5935CDCT1GE3CUTTAPE
    • DGQ2788A AEC-Q100 Qualified Analog Switch
      DGQ2788A AEC-Q100 Qualified Analog Switch
      The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
    More Newest Products
    Top