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BSC030N08NS5ATMA1

BSC030N08NS5ATMA1
Mfr. #:
BSC030N08NS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 80V 100A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC030N08NS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC030N08NS5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Verpackung
Spule
Teil-Aliasnamen
BSC030N08NS5 SP001077098
Gewichtseinheit
0.017870 oz
Montageart
SMD/SMT
Paket-Koffer
TDSON-8
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
139 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
13 ns
Anstiegszeit
12 ns
Vgs-Gate-Source-Spannung
+/- 20 V
ID-Dauer-Drain-Strom
100 A
Vds-Drain-Source-Breakdown-Voltage
80 V
Vgs-th-Gate-Source-Threshold-Voltage
2.2 V
Rds-On-Drain-Source-Widerstand
4.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
43 ns
Typische-Einschaltverzögerungszeit
20 ns
Qg-Gate-Ladung
61 nC
Vorwärts-Transkonduktanz-Min
55 S
Kanal-Modus
Erweiterung
Tags
BSC030N0, BSC030N, BSC030, BSC03, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 80 V 3 mOhm 61 nC OptiMOS™ Power Mosfet - TDSON-8
***ark
Mosfet, N-Ch, 80V, 100A, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0026Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipationrohs Compliant: Yes
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC030N08NS5ATMA1
DISTI # V72:2272_06378848		Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		587
  • 500:$0.8286
  • 250:$1.1693
  • 100:$1.1822
  • 25:$1.3817
  • 10:$1.4325
  • 1:$1.6386
BSC030N08NS5ATMA1
DISTI # BSC030N08NS5ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4688In Stock
  • 1000:$1.1295
  • 500:$1.3632
  • 100:$1.7526
  • 10:$2.1810
  • 1:$2.4100
BSC030N08NS5ATMA1
DISTI # BSC030N08NS5ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4688In Stock
  • 1000:$1.1295
  • 500:$1.3632
  • 100:$1.7526
  • 10:$2.1810
  • 1:$2.4100
BSC030N08NS5ATMA1
DISTI # BSC030N08NS5ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 80V 100A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$0.9831
BSC030N08NS5ATMA1
DISTI # 31035271		Infineon Technologies AGTrans MOSFET N-CH 80V 100A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		587
  • 500:$0.8286
  • 250:$1.1693
  • 100:$1.1822
  • 25:$1.3817
  • 10:$1.4325
  • 9:$1.6386
BSC030N08NS5ATMA1
DISTI # BSC030N08NS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC030N08NS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.7919
  • 10000:$0.7629
  • 20000:$0.7359
  • 30000:$0.7109
  • 50000:$0.6979
BSC030N08NS5ATMA1
DISTI # BSC030N08NS5		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: BSC030N08NS5)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
    BSC030N08NS5ATMA1
    DISTI # SP001077098    		Infineon Technologies AGTrans MOSFET N-CH 80V 100A 8-Pin TDSON T/R (Alt: SP001077098)
    RoHS: Compliant
    Min Qty: 5000
    Container: Tape and Reel    		Europe - 0
    • 5000:€1.0069
    • 10000:€0.8389
    • 20000:€0.7749
    • 30000:€0.7189
    • 50000:€0.6709
    BSC030N08NS5ATMA1
    DISTI # 12AC9442    		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0026ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes3412
    • 1:$2.0300
    • 10:$1.7200
    • 25:$1.6100
    • 50:$1.4900
    • 100:$1.3800
    • 250:$1.3000
    • 500:$1.2100
    • 1000:$0.9970
    BSC030N08NS5ATMA1
    DISTI # 726-BSC030N08NS5ATMA    		Infineon Technologies AGMOSFET N-Ch 80V 100A
    RoHS: Compliant    		11
    • 1:$2.0300
    • 10:$1.7200
    • 100:$1.3800
    • 500:$1.2100
    • 1000:$0.9970
    • 2500:$0.9290
    • 5000:$0.8940
    BSC030N08NS5ATMA1
    DISTI # 2709870    		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
    RoHS: Compliant    		3412
    • 1:$3.8200
    • 10:$3.4600
    • 100:$2.7800
    BSC030N08NS5ATMA1
    DISTI # 2709870    		Infineon Technologies AGMOSFET, N-CH, 80V, 100A, TDSON
    RoHS: Compliant    		3806
    • 1:£1.7700
    • 10:£1.2400
    • 100:£1.0500
    • 250:£0.9880
    • 500:£0.9260
    BSC030N08NS5ATMA1
    DISTI # C1S322000456314    		Infineon Technologies AGMOSFETs587
    • 250:$1.1693
    • 100:$1.1822
    • 25:$1.3817
    • 10:$1.4325
    Bild Teil # Beschreibung
    BSC030N04NS G

    Mfr.#: BSC030N04NS G

    OMO.#: OMO-BSC030N04NS-G

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC030N04NSGXT

    Mfr.#: BSC030N04NSGXT

    OMO.#: OMO-BSC030N04NSGXT

    		 MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3
    BSC030N03LSG

    Mfr.#: BSC030N03LSG

    OMO.#: OMO-BSC030N03LSG-1190

    		 Power Field-Effect Transistor, 23A I(D), 30V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    BSC030N03LSGATMA1

    Mfr.#: BSC030N03LSGATMA1

    OMO.#: OMO-BSC030N03LSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 30V 100A TDSON-8
    BSC030N03MS

    Mfr.#: BSC030N03MS

    OMO.#: OMO-BSC030N03MS-1190

    		 Neu und Original
    BSC030N03MS G

    Mfr.#: BSC030N03MS G

    OMO.#: OMO-BSC030N03MS-G-1190

    		 Trans MOSFET N-CH 30V 21A 8-Pin TDSON EP
    BSC030N03MSG

    Mfr.#: BSC030N03MSG

    OMO.#: OMO-BSC030N03MSG-1190

    		 Neu und Original
    BSC030N04NS

    Mfr.#: BSC030N04NS

    OMO.#: OMO-BSC030N04NS-1190

    		 Neu und Original
    BSC030N04NSGATMA1

    Mfr.#: BSC030N04NSGATMA1

    OMO.#: OMO-BSC030N04NSGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 40V 100A TDSON-8
    BSC030N08NS5

    Mfr.#: BSC030N08NS5

    OMO.#: OMO-BSC030N08NS5-1190

    		 Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1000
    Menge eingeben:
    Der aktuelle Preis von BSC030N08NS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,05 $
    1,05 $
    10
    0,99 $
    9,94 $
    100
    0,94 $
    94,22 $
    500
    0,89 $
    444,90 $
    1000
    0,84 $
    837,50 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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