SIS606BDN-T1-GE3

SIS606BDN-T1-GE3
Mfr. #:
SIS606BDN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS606BDN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIS606BDN-T1-GE3 DatasheetSIS606BDN-T1-GE3 Datasheet (P4-P6)SIS606BDN-T1-GE3 Datasheet (P7)
ECAD Model:
Mehr Informationen:
SIS606BDN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
35.3 A
Rds On - Drain-Source-Widerstand:
14.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Serie:
SIS
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
19 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SIS60, SIS6, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ow.cn
Trans MOSFET N-CH 100V 9.4A 8-Pin PowerPAK 1212 EP T/R
***nell
MOSFET, N-CH, 100V, 35.3A, POWERPAK SO
***ark
Mosfet, N-Ch, 100V, 35.3A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:35.3A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0145Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIS606BDN-T1-GE3
DISTI # V72:2272_21388922
Vishay IntertechnologiesSIS606BDN-T1-GE35900
  • 75000:$0.5823
  • 30000:$0.5904
  • 15000:$0.5985
  • 6000:$0.6066
  • 3000:$0.6147
  • 1000:$0.6228
  • 500:$0.7966
  • 250:$0.8987
  • 100:$0.9453
  • 50:$0.9791
  • 25:$1.0879
  • 10:$1.2088
  • 1:$1.6325
SIS606BDN-T1-GE3
DISTI # V99:2348_21388922
Vishay IntertechnologiesSIS606BDN-T1-GE30
  • 3000000:$0.6303
  • 600000:$0.6311
  • 60000:$0.6320
  • 6000:$0.6321
SIS606BDN-T1-GE3
DISTI # V36:1790_21388922
Vishay IntertechnologiesSIS606BDN-T1-GE30
  • 6000000:$0.5863
  • 3000000:$0.5865
  • 600000:$0.6021
  • 60000:$0.6279
  • 6000:$0.6321
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 15000:$0.5779
  • 6000:$0.6005
  • 3000:$0.6321
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6000In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CHAN 100V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6000In Stock
  • 1000:$0.6976
  • 500:$0.8836
  • 100:$1.0696
  • 10:$1.3720
  • 1:$1.5300
SIS606BDN-T1-GE3
DISTI # 33136746
Vishay IntertechnologiesSIS606BDN-T1-GE35900
  • 15000:$0.5985
  • 6000:$0.6066
  • 3000:$0.6147
  • 1000:$0.6228
  • 500:$0.7966
  • 250:$0.8987
  • 100:$0.9453
  • 50:$0.9791
  • 25:$1.0879
  • 11:$1.2088
SIS606BDN-T1-GE3
DISTI # SIS606BDN-T1-GE3
Vishay Intertechnologies(Alt: SIS606BDN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Asia - 0
    SIS606BDN-T1-GE3
    DISTI # SIS606BDN-T1-GE3
    Vishay Intertechnologies- Tape and Reel (Alt: SIS606BDN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel
    Americas - 0
    • 60000:$0.5509
    • 30000:$0.5659
    • 18000:$0.5819
    • 12000:$0.6069
    • 6000:$0.6249
    SIS606BDN-T1-GE3
    DISTI # SIS606BDN-T1-GE3
    Vishay Intertechnologies(Alt: SIS606BDN-T1-GE3)
    RoHS: Compliant
    Min Qty: 1
    Europe - 0
    • 1000:€0.5999
    • 500:€0.6069
    • 100:€0.6179
    • 50:€0.6269
    • 25:€0.7089
    • 10:€0.8739
    • 1:€1.2179
    SIS606BDN-T1-GE3
    DISTI # 59AC7462
    Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
    • 10000:$0.5470
    • 6000:$0.5590
    • 4000:$0.5810
    • 2000:$0.6450
    • 1000:$0.7100
    • 1:$0.7400
    SIS606BDN-T1-GE3
    DISTI # 78-SIS606BDN-T1-GE3
    Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK 1212-8
    RoHS: Compliant
    0
    • 1:$1.5000
    • 10:$1.2300
    • 100:$0.9500
    • 500:$0.8170
    • 1000:$0.6440
    • 3000:$0.6010
    • 6000:$0.5710
    • 9000:$0.5500
    SIS606BDN-T1-GE3
    DISTI # 2846620
    Vishay IntertechnologiesMOSFET, N-CH, 100V, 35.3A, POWERPAK SO0
    • 500:£0.6240
    • 250:£0.6750
    • 100:£0.7260
    • 10:£0.9870
    • 1:£1.3000
    SIS606BDN-T1-GE3
    DISTI # 2846620
    Vishay IntertechnologiesMOSFET, N-CH, 100V, 35.3A, POWERPAK SO
    RoHS: Compliant
    0
    • 1000:$1.0600
    • 500:$1.3400
    • 100:$1.6200
    • 5:$2.0700
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    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von SIS606BDN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,50 $
    1,50 $
    10
    1,23 $
    12,30 $
    100
    0,95 $
    95,00 $
    500
    0,82 $
    408,50 $
    1000
    0,64 $
    644,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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