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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BUK7616-55A,118 DISTI # BUK7616-55A,118-ND | NXP Semiconductors | MOSFET N-CH 55V 65.7A D2PAK RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BUK7616-55A,118 DISTI # 771-BUK7616-55A118 | Nexperia | MOSFET TAPE13 PWR-MOS RoHS: Compliant | 0 | |
| BUK7616-55A /T3 DISTI # 771-BUK7616-55A/T3 | NXP Semiconductors | MOSFET TAPE13 PWR-MOS RoHS: Compliant | 0 | |
| BUK7616-55A | Philips Semiconductors | 4639 |
| Bild | Teil # | Beschreibung |
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Mfr.#: BUK763R9-60E,118 OMO.#: OMO-BUK763R9-60E-118 |
MOSFET BUK763R9-60E/D2PAK/REEL 13" Q1 |
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Mfr.#: BUK7660-100A,118 OMO.#: OMO-BUK7660-100A-118 |
MOSFET TAPE13 PWR-MOS |
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Mfr.#: BUK763R6-40C,118 OMO.#: OMO-BUK763R6-40C-118 |
MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET |
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Mfr.#: BUK7608-40B118 OMO.#: OMO-BUK7608-40B118-1190 |
Neu und Original |
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Mfr.#: BUK7619-100B118 OMO.#: OMO-BUK7619-100B118-1190 |
Now Nexperia BUK7619-100B - Power Field-Effect Transistor, 64A I(D), 100V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BUK761R8-30C118 OMO.#: OMO-BUK761R8-30C118-1190 |
Now Nexperia BUK761R8-30C - Power Field-Effect Transistor, 312A I(D), 30V, 1800ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BUK7610-100B,118 |
MOSFET N-CH 100V 75A D2PAK |
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Mfr.#: BUK763R9-60E,118 |
IGBT Transistors MOSFET BUK763R9-60E/D2PAK/REEL13 |
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Mfr.#: BUK763R1-40B,118 |
MOSFET HIGH PERF TRENCHMOS |
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Mfr.#: BUK762R4-60E,118 |
MOSFET N-channel TrenchMOS intermed level FET |