GB05SLT12-252

Mfr. #:: GB05SLT12-252
Hersteller:: GeneSiC Semiconductor
Beschreibung:: Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: GB05SLT12-252 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: GB05SLT12-252 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: GeneSiC Halbleiter

Produktkategorie:: Schottky-Dioden und Gleichrichter

RoHS:: Y

Produkt:: Schottky-Siliziumkarbid-Dioden

Montageart:: Durchgangsloch

Paket / Koffer:: TO-263

Wenn - Vorwärtsstrom:: 5 A

Vrrm - Repetitive Sperrspannung:: 1200 V

Vf - Durchlassspannung:: 1.9 V

Ifsm - Vorwärtsstoßstrom:: 32 A

Technologie:: SiC

Ir - Gegenstrom:: 26 uA

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Serie:: GB05SLT12

Verpackung:: Spule

Betriebstemperaturbereich:: - 55 C to + 175 C

Marke:: GeneSiC Halbleiter

Pd - Verlustleistung:: 42 W

Produktart:: Schottky-Dioden und Gleichrichter

Werkspackungsmenge:: 2500

Unterkategorie:: Dioden & Gleichrichter

trr - Reverse Recovery-Zeit:: 25 ns

Gewichtseinheit:: 0.056438 oz

Tags: GB05S, GB05, GB0

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

GB05SLT12-252 Beschreibung

***eSiC Semiconductor: SiC Schottky MPS™ Diode 1200V 5A TO-252-2

***i-Key: DIODE SILICON 1.2KV 5A TO252

***ark: SIC SCHOTTKY DIODE, SINGLE, 5A, 1.2KV, TO-252; Product Range:1200V Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Continuous Forward Current If:5A; Total Capacitive Charge Qc:35nC; No. of Pins:3 Pin RoHS Compliant: Yes

GB05SLT12-252 Mehr Informationen

1200V & 1700V SiC MPS Schottky Diodes: GeneSiC Semiconductor 1200V and 1700V SiC MPS Schottky Diodes provide low standby power losses and improved circuit efficiency. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. Both the 1200V and 1700V Schottky Diodes offer the advantage of paralleling devices without a thermal runaway. Additional features include low reverse recovery current, low device capacitance, and low reverse leakage current. The SiC MPS Schottky Diodes are ideal for a wide range of applications including LED lighting, medical imaging systems, high voltage sensing, and electric vehicles.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
GB05SLT12-252 DISTI # 1242-1129-ND	GeneSic Semiconductor Inc	DIODE SILICON 1.2KV 5A TO252 RoHS: Compliant Min Qty: 2500 Container: Bulk	Temporarily Out of Stock	2500:$3.4843
GB05SLT12-252 DISTI # 905-GB05SLT12-252	GeneSic Semiconductor Inc	Schottky Diodes & Rectifiers 1200V 1A SiC Schottky Rectifier RoHS: Compliant	179	1:$8.5000 10:$7.6500 25:$6.9700 100:$6.3000 250:$5.7900 500:$5.2700 1000:$4.6000

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	Mfr.#: IPB60R165CP OMO.#: OMO-IPB60R165CP-126	IGBT Transistors MOSFET N-Ch 650V 21A D2PAK-2 CoolMOS CP

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von GB05SLT12-252 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

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GB05SLT12-252

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes