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IRFS4010-7PPBF

IRFS4010-7PPBF
Mfr. #:
IRFS4010-7PPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 100V 190A 4.0mOhm 150nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFS4010-7PPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFS4010-7PPBF DatasheetIRFS4010-7PPBF Datasheet (P4-P6)IRFS4010-7PPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
190 A
Rds On - Drain-Source-Widerstand:
3.3 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
150 nC
Pd - Verlustleistung:
380 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
4.4 mm
Länge:
10 mm
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
50
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001552284
Gewichtseinheit:
0.056438 oz
Tags
IRFS4010-7, IRFS401, IRFS40, IRFS4, IRFS, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube / MOSFET N-CH 100V 190A D2PAK-7
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS
***(Formerly Allied Electronics)
MOSFET, 100V, 190A, 4.0MOHM, 150NC QG, D2PAK-7
***ment14 APAC
MOSFET, N-CH, 100V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:100V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9830pF; Current Id Max:190A; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Pulse Current Idm:740A; Reverse Recovery Time trr Typ:60ns; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***ark
N CH POWER MOSFET, HEXFET, 100V, 190A, D2PAK-7; Transistor Polarity:N Channel; C
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-pin package, D2PAK7P, RoHS
***ure Electronics
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***S.I.T. Europe - USA - Asia
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***et
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***Yang
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***ment14 APAC
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Source Voltage Vds:100V; On Resistance
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH, 100V, 190A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 190A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 380W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ical
Trans MOSFET N-CH 100V 190A Automotive 7-Pin(6+Tab) D2PAK Tube
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
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***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a 7-lead D2-Pak Package, D2PAK7P, RoHS
***ineon
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***ical
Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) D2PAK Tube
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:160A; On Resistance, Rds(on):3.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
***Yang
Transistor MOSFET N-CH 100V 200A 7-Pin TO-263 T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 200A, 3mΩ
***r Electronics
Power Field-Effect Transistor, 200A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
***nell
MOSFET, N-CH, 100V, 200A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 200A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 250W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***icroelectronics
Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET
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*** Electronics
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***nell
MOSFET, N CH, 100V, 180A, H2PAK-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V
***icroelectronics
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
***et
Trans MOSFET N-CH 75V 180A 7-Pin(6+Tab) H2PAK T/R
*** Source Electronics
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***icroelectronics SCT
Power MOSFETs, 75V, 180A, H2PAK-6, Tape and Reel
***S
French Electronic Distributor since 1988
***ponent Sense
QA-0096-0 TRS,SMT,H2PAK-6,N-CHANN POWER
***el Electronic
CAP CERAMIC DISK RDL SHORT LEADS
***ment14 APAC
MOSFET, N CH, 75V, 180A, H2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:H2PAK-6; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +175°C
Teil # Mfg. Beschreibung Aktie Preis
IRFS4010-7PPBF
DISTI # IRFS4010-7PPBF-ND		Infineon Technologies AGMOSFET N-CH 100V 190A D2PAK-7
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRFS40107PPBF
    DISTI # SP001552284    		Infineon Technologies AGTrans MOSFET N-CH 100V 190A 7-Pin(6+Tab) D2PAK Tube (Alt: SP001552284)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€3.4900
    • 10:€2.7900
    • 25:€2.5900
    • 50:€2.4900
    • 100:€2.3900
    • 500:€2.2900
    • 1000:€2.2900
    IRFS4010-7PPBF
    DISTI # 942-IRFS4010-7PPBF    		Infineon Technologies AGMOSFET MOSFT 100V 190A 4.0mOhm 150nC
    RoHS: Compliant    		0
      IRFS4010-7PPBFInternational RectifierINSTOCK3
        IRFS4010-7PPBF
        DISTI # 1688589        		Infineon Technologies AGMOSFET, N-CH, 100V, D2PAK
        RoHS: Compliant        		0
        • 1:$8.1400
        • 10:$7.3100
        • 100:$5.9900
        Bild Teil # Beschreibung
        IRFS4010TRLPBF

        Mfr.#: IRFS4010TRLPBF

        OMO.#: OMO-IRFS4010TRLPBF

        		 MOSFET MOSFT 100V 180A 4.7mOhm 143nC Qg
        IRFS4010TRL7PP

        Mfr.#: IRFS4010TRL7PP

        OMO.#: OMO-IRFS4010TRL7PP

        		 MOSFET MOSFT 100V 190A 4.0mOhm 150nC Qg
        IRFS4010-7PPBF

        Mfr.#: IRFS4010-7PPBF

        OMO.#: OMO-IRFS4010-7PPBF

        		 MOSFET MOSFT 100V 190A 4.0mOhm 150nC
        IRFS4010TRRPBF

        Mfr.#: IRFS4010TRRPBF

        OMO.#: OMO-IRFS4010TRRPBF

        		 MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
        IRFS4010TRL7PP

        Mfr.#: IRFS4010TRL7PP

        OMO.#: OMO-IRFS4010TRL7PP-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 190A D2PAK-7
        IRFS4010

        Mfr.#: IRFS4010

        OMO.#: OMO-IRFS4010-1190

        		 Neu und Original
        IRFS4010-7PPBF

        Mfr.#: IRFS4010-7PPBF

        OMO.#: OMO-IRFS4010-7PPBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 190A D2PAK-7
        IRFS4010PBF

        Mfr.#: IRFS4010PBF

        OMO.#: OMO-IRFS4010PBF-INFINEON-TECHNOLOGIES

        		 MOSFET N-CH 100V 180A D2PAK
        IRFS4010TRLPBF,FS4010

        Mfr.#: IRFS4010TRLPBF,FS4010

        OMO.#: OMO-IRFS4010TRLPBF-FS4010-1190

        		 Neu und Original
        IRFS4010TRRPBF

        Mfr.#: IRFS4010TRRPBF

        OMO.#: OMO-IRFS4010TRRPBF-INFINEON-TECHNOLOGIES

        		 RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 4.7mOhms 143nC
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von IRFS4010-7PPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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