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SIB452DK-T1-GE3

SIB452DK-T1-GE3
Mfr. #:
SIB452DK-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET N-CH 190V 1.5A SC75-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIB452DK-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Produktkategorie
FETs - Einzeln
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
SIB452DK-GE3
Gewichtseinheit
0.003386 oz
Montageart
SMD/SMT
Paket-Koffer
PowerPAKR SC-75-6L
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PowerPAKR SC-75-6L Single
Aufbau
Single Quad Drain Dual Source
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
13W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
190V
Eingangskapazität-Ciss-Vds
135pF @ 50V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
1.5A (Tc)
Rds-On-Max-Id-Vgs
2.4 Ohm @ 500mA, 4.5V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Lade-Qg-Vgs
6.5nC @ 10V
Pd-Verlustleistung
2.4 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
15 ns
Anstiegszeit
16 ns
Vgs-Gate-Source-Spannung
16 V
ID-Dauer-Drain-Strom
670 mA
Vds-Drain-Source-Breakdown-Voltage
190 V
Rds-On-Drain-Source-Widerstand
2.4 Ohms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
30 ns
Typische-Einschaltverzögerungszeit
12 ns
Kanal-Modus
Erweiterung
Tags
SIB452DK, SIB452, SIB45, SIB4, SIB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SIB452DK-T1-GE3 N-channel MOSFET Transistor; 0.67 A; 190 V; 6-Pin SC-75
***Components
Supplied as a Tape, N-Channel MOSFET, 670 mA, 190 V, 6-Pin SC-75 Vishay SIB452DK-T1-GE3
***ure Electronics
Single N-Channel 190 V 2.4 Ohms Surface Mount Power Mosfet - PowerPAK SC-75-6L
***et Europe
Trans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
***ical
Trans MOSFET N-CH 190V 1.5A 6-Pin PowerPAK SC-75 T/R
***i-Key
MOSFET N-CH 190V 1.5A SC75-6
***ronik
N-CH.-FET 1,5A 190V PPAK SC75-6
***
N-CHANNEL 190-V
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:670Ma; Drain Source Voltage Vds:190V; On Resistance Rds(On):1.8Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; No. Of Pins:6Pins Rohs Compliant: No
***nell
MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:13W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SC75; No. of Pins:6; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 190V, 1.5A, PPAKSC75; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:190V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:13W; Transistor Case Style:PowerPAK SC75; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Teil # Mfg. Beschreibung Aktie Preis
SIB452DK-T1-GE3
DISTI # V72:2272_09216871		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 25:$0.4638
  • 10:$0.5153
  • 1:$0.6108
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		19310In Stock
  • 1000:$0.3626
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 190V 1.5A SC75-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		18000In Stock
  • 3000:$0.3190
SIB452DK-T1-GE3
DISTI # 30571749		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R
RoHS: Compliant		2000
  • 1000:$0.2844
  • 500:$0.3444
  • 250:$0.3958
  • 100:$0.4002
  • 26:$0.4638
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 50
  • 3000:€0.4799
  • 6000:€0.3269
  • 12000:€0.2819
  • 18000:€0.2599
  • 30000:€0.2419
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R - Tape and Reel (Alt: SIB452DK-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.2829
  • 6000:$0.2749
  • 12000:$0.2639
  • 18000:$0.2559
  • 30000:$0.2489
SIB452DK-T1-GE3
DISTI # SIB452DK-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 190V 0.67A 6-Pin PowerPAK SC-75 T/R (Alt: SIB452DK-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SIB452DK-T1-GE3
    DISTI # 19X1929    		Vishay IntertechnologiesMOSFET Transistor, N Channel, 1.5 A, 190 V, 1.8 ohm, 4.5 V, 1.5 V , RoHS Compliant: Yes2780
    • 1:$0.8000
    • 10:$0.6380
    • 25:$0.5870
    • 50:$0.5360
    • 100:$0.4850
    • 250:$0.4430
    • 500:$0.4000
    • 1000:$0.3200
    SIB452DK-T1-GE3.
    DISTI # 28AC2101    		Vishay IntertechnologiesN-CH PPAKSC75 190V 2.4 OHM @ 4.5V , ROHS COMPLIANT: NO0
    • 1:$0.2830
    • 6000:$0.2750
    • 12000:$0.2640
    • 18000:$0.2560
    • 30000:$0.2490
    SIB452DK-T1-GE3
    DISTI # 70616558    		Vishay SiliconixSIB452DK-T1-GE3 N-channel MOSFET Transistor,0.67 A,190 V,6-Pin SC-75
    RoHS: Compliant    		0
    • 300:$0.4200
    • 600:$0.3700
    • 1500:$0.3400
    • 3000:$0.2900
    SIB452DK-T1-GE3
    DISTI # 781-SIB452DK-T1-GE3    		Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		6525
    • 1:$0.8000
    • 10:$0.6380
    • 100:$0.4850
    • 500:$0.4000
    • 1000:$0.3200
    • 3000:$0.2900
    • 6000:$0.2710
    • 9000:$0.2610
    SIB452DK-T1-GE3
    DISTI # 8141253P    		Vishay IntertechnologiesTRANS MOSFET N-CH 190V 0.67A, RL5980
    • 60:£0.2530
    • 200:£0.2520
    • 400:£0.2510
    • 800:£0.2490
    SIB452DK-T1-GE3
    DISTI # C1S803601460440    		Vishay IntertechnologiesMOSFETs
    RoHS: Compliant    		2000
    • 250:$0.3956
    • 100:$0.3999
    • 25:$0.4635
    • 10:$0.5150
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 5:£0.4300
    • 25:£0.2700
    • 100:£0.2690
    • 250:£0.2680
    • 500:£0.2650
    SIB452DK-T1-GE3
    DISTI # 2364070    		Vishay IntertechnologiesMOSFET, N-CH, 190V, 1.5A, PPAKSC75
    RoHS: Compliant    		2775
    • 1:$1.2800
    • 10:$1.0100
    • 100:$0.7680
    • 500:$0.6340
    • 1000:$0.5070
    • 3000:$0.4590
    • 6000:$0.4290
    • 9000:$0.4130
    SIB452DK-T1-GE3Vishay IntertechnologiesMOSFET 190V Vds 16V Vgs PowerPAK SC-75
    RoHS: Compliant    		Americas - 18000
      Bild Teil # Beschreibung
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3

      		 MOSFET 190V Vds 16V Vgs PowerPAK SC-75
      SIB452DK-T1-GE3-CUT TAPE

      Mfr.#: SIB452DK-T1-GE3-CUT TAPE

      OMO.#: OMO-SIB452DK-T1-GE3-CUT-TAPE-1190

      		 Neu und Original
      SIB452D

      Mfr.#: SIB452D

      OMO.#: OMO-SIB452D-1190

      		 Neu und Original
      SIB452DK

      Mfr.#: SIB452DK

      OMO.#: OMO-SIB452DK-1190

      		 Neu und Original
      SIB452DK-T1-GE3

      Mfr.#: SIB452DK-T1-GE3

      OMO.#: OMO-SIB452DK-T1-GE3-VISHAY

      		 MOSFET N-CH 190V 1.5A SC75-6
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SIB452DK-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,36 $
      0,36 $
      10
      0,34 $
      3,38 $
      100
      0,32 $
      31,98 $
      500
      0,30 $
      151,00 $
      1000
      0,28 $
      284,30 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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