2N4401G

2N4401G
Mfr. #:
2N4401G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT 600mA 60V NPN
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N4401G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N4401G Datasheet2N4401G Datasheet (P4-P6)2N4401G Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-92-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
40 V
Kollektor- Basisspannung VCBO:
60 V
Emitter- Basisspannung VEBO:
6 V
Kollektor-Emitter-Sättigungsspannung:
0.75 V
Maximaler DC-Kollektorstrom:
0.6 A
Bandbreitenprodukt fT gewinnen:
250 MHz
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
2N4401
Höhe:
5.33 mm
Länge:
5.2 mm
Verpackung:
Schüttgut
Breite:
4.19 mm
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
0.6 A
DC-Kollektor/Basisverstärkung hfe Min:
20
Pd - Verlustleistung:
625 mW
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
5000
Unterkategorie:
Transistoren
Gewichtseinheit:
0.016014 oz
Tags
2N4401, 2N440, 2N44, 2N4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
Transistor, Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 600mA,PD 1.5W,TO-92
***emi
NPN Bipolar Transistor, TO-92 40 V, 0.6 A
***S.I.T. Europe - USA - Asia
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
***ark
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Collector Emitter Saturation Voltage, Vce(sat):0.75V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):100; Package/Case:TO-92 ;RoHS Compliant: Yes
***nell
TRANSISTOR, NPN, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 250hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 400mV; Continuous Collector Current Ic Max: 600mA; Current Ic @ Vce Sat: 150mA; Current Ic Continuous a Max: 600mA; Current Ic Fall Time Measurement: 150mA; Current Ic hFE: 1mA; Device Marking: 2N4401; Fall Time @ Ic: 255ns; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 250MHz; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 40; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: b; Power Dissipation Ptot Max: 625mW; Voltage Vcbo: 60V
Teil # Mfg. Beschreibung Aktie Preis
2N4401G
DISTI # V36:1790_07433254
ON SemiconductorTrans GP BJT NPN 40V 0.6A 3-Pin TO-92 Box
RoHS: Compliant
17
  • 100:$0.1086
  • 25:$0.1272
  • 10:$0.1656
  • 1:$0.2024
2N4401G
DISTI # 2N4401GOS-ND
ON SemiconductorTRANS NPN 40V 0.6A TO-92
RoHS: Compliant
Min Qty: 5000
Container: Bulk
Limited Supply - Call
    2N4401G
    DISTI # C1S541900364903
    ON SemiconductorTrans GP BJT NPN 40V 0.6A 3-Pin TO-92 Box
    RoHS: Compliant
    17
    • 25:$0.1346
    2N4401G
    DISTI # 70099744
    ON SemiconductorTransistor,Bipolar,Si,NPN,General Purpose,VCEO 40VDC,IC 600mA,PD 1.5W,TO-92
    RoHS: Compliant
    0
    • 1:$0.0750
    • 10:$0.0710
    • 100:$0.0680
    • 1000:$0.0640
    • 5000:$0.0610
    2N4401GON Semiconductor 
    RoHS: Not Compliant
    21963
    • 500:$0.0900
    • 1000:$0.0900
    • 25:$0.1000
    • 100:$0.1000
    • 1:$0.1100
    2N4401G
    DISTI # 863-2N4401G
    ON SemiconductorBipolar Transistors - BJT 600mA 60V NPN
    RoHS: Compliant
    0
      2N4401GON SemiconductorNPN SILICON GENERAL PURPOSE TRANSISTOR LEAD FREE, CASE 29-11, TO-226AA, 3 PIN
      RoHS: Compliant
      Asia - 5000
        2N4401GON SemiconductorINSTOCK559
          2N4401G
          DISTI # 9556427
          ON SemiconductorTRANSISTOR, NPN, TO-92
          RoHS: Compliant
          0
          • 5:$0.5000
          • 25:$0.3750
          • 100:$0.2400
          2N4401GON SemiconductorGeneral Purpose NPN Silicon Transistor341
          • 1:$0.1400
          • 100:$0.1000
          • 500:$0.0800
          • 1000:$0.0800
          Bild Teil # Beschreibung
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          2N4392Z

          Mfr.#: 2N4392Z

          OMO.#: OMO-2N4392Z-1190

          Neu und Original
          2N4401/2X

          Mfr.#: 2N4401/2X

          OMO.#: OMO-2N4401-2X-1190

          Neu und Original
          2N4401L

          Mfr.#: 2N4401L

          OMO.#: OMO-2N4401L-1190

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          2N4403_D29Z

          Mfr.#: 2N4403_D29Z

          OMO.#: OMO-2N4403-D29Z-ON-SEMICONDUCTOR

          TRANS PNP 40V 0.6A TO-92
          2N475A

          Mfr.#: 2N475A

          OMO.#: OMO-2N475A-1190

          Neu und Original
          2N4126_D75Z

          Mfr.#: 2N4126_D75Z

          OMO.#: OMO-2N4126-D75Z-1190

          Bipolar Transistors - BJT
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von 2N4401G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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