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IRF7463TRPBF

IRF7463TRPBF
Mfr. #:
IRF7463TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 30V 13A 8mOhm 34nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF7463TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7463TRPBF DatasheetIRF7463TRPBF Datasheet (P4-P6)IRF7463TRPBF Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
IRF7463TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SO-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
10.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
12 V
Qg - Gate-Ladung:
34 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
1.75 mm
Länge:
4.9 mm
Transistortyp:
1 N-Channel
Breite:
3.9 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
41 S
Abfallzeit:
6.5 ns
Produktart:
MOSFET
Anstiegszeit:
138 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
16 ns
Teil # Aliase:
SP001551388
Gewichtseinheit:
0.017870 oz
Tags
IRF7463TRP, IRF7463T, IRF7463, IRF746, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
IRF7463PBF N-channel MOSFET Transistor; 14 A; 30 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 30 V 8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 14A 8-Pin SOIC Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***nell
MOSFET, N, LOGIC, SO-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.008ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 14A; Current Temperature: 25°C; External Depth: 5.2mm; External Length / Height: 1.75mm; External Width: 4.05mm; Full Power Rating Temperature: 25°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 110A; Row Pitch: 6.3mm; SMD Marking: IRF7463PBF; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Max: 2V; Voltage Vgs Rds on Measurement: 10V
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRF7463TRPBF
DISTI # V72:2272_13891081		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R3899
  • 3000:$0.6393
  • 1000:$0.6460
  • 500:$0.7867
  • 250:$0.8787
  • 100:$0.8886
  • 25:$1.0869
  • 10:$1.1001
  • 1:$1.2435
IRF7463TRPBF
DISTI # IRF7463PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 14A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.7681
IRF7463TRPBF
DISTI # 26929375		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R4000
  • 4000:$0.7190
IRF7463TRPBF
DISTI # 30334307		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R3899
  • 3000:$0.6393
  • 1000:$0.6460
  • 500:$0.7867
  • 250:$0.8787
  • 100:$0.8886
  • 25:$1.0869
  • 13:$1.1001
IRF7463TRPBF
DISTI # IRF7463TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7463TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.5739
  • 8000:$0.5539
  • 16000:$0.5339
  • 24000:$0.5159
  • 40000:$0.5059
IRF7463TRPBF
DISTI # IRF7463TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R (Alt: IRF7463TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
  • 4000:$0.6109
  • 8000:$0.5858
  • 12000:$0.5779
  • 20000:$0.5554
  • 40000:$0.5482
  • 100000:$0.5345
  • 200000:$0.5215
IRF7463TRPBF
DISTI # SP001551388		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R (Alt: SP001551388)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 0
  • 4000:€0.5939
  • 8000:€0.4859
  • 16000:€0.4449
  • 24000:€0.4109
  • 40000:€0.3819
IRF7463TRPBF
DISTI # 32AC7471		Infineon Technologies AGMOSFET, N-CH, 30V, 14A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:14A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.006ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation RoHS Compliant: Yes2790
  • 1:$1.6400
  • 10:$1.4000
  • 25:$1.2900
  • 50:$1.1900
  • 100:$1.0800
  • 250:$1.0100
  • 500:$0.9480
  • 1000:$0.7490
IRF7463TRPBF
DISTI # 70018912		Infineon Technologies AGMOSFET,30V,13A,8 MOHM,34 NC QG,SO-8
RoHS: Compliant		0
  • 4000:$0.6200
IRF7463TRPBF
DISTI # 942-IRF7463TRPBF		Infineon Technologies AGMOSFET MOSFT 30V 13A 8mOhm 34nC
RoHS: Compliant		4866
  • 1:$1.6400
  • 10:$1.4000
  • 100:$1.0800
  • 500:$0.9480
  • 1000:$0.7490
  • 4000:$0.6640
  • 8000:$0.6390
IRF7463TRPBF
DISTI # 1623268		Infineon Technologies AGMOSFET N-CH 30V 14A HEXFET SOIC8, RL8000
  • 4000:£0.4790
  • 8000:£0.4690
  • 12000:£0.4600
IRF7463TRPBF
DISTI # 2777383		Infineon Technologies AGMOSFET, N-CH, 30V, 14A, SOIC
RoHS: Compliant		2790
  • 5:$1.9700
  • 25:$1.7200
  • 100:$1.4000
IRF7463TRPBF
DISTI # C1S322000595084		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R
RoHS: Compliant		3899
  • 250:$0.8787
  • 100:$0.8886
  • 25:$1.0869
  • 10:$1.1001
IRF7463TRPBF
DISTI # C1S322000604887		Infineon Technologies AGTrans MOSFET N-CH 30V 14A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.5370
IRF7463TRPBF
DISTI # 2777383		Infineon Technologies AGMOSFET, N-CH, 30V, 14A, SOIC
RoHS: Compliant		2790
  • 5:£1.1000
  • 25:£1.0700
  • 100:£0.7800
  • 250:£0.7350
  • 500:£0.6900
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Verfügbarkeit
Aktie:
240
Auf Bestellung:
2223
Menge eingeben:
Der aktuelle Preis von IRF7463TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,64 $
1,64 $
10
1,40 $
14,00 $
100
1,08 $
108,00 $
500
0,95 $
474,00 $
1000
0,75 $
749,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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