IPT029N08N5ATMA1

IPT029N08N5ATMA1
Mfr. #:
IPT029N08N5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MV POWER MOS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPT029N08N5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPT029N08N5ATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPT02, IPT0, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ronik
N-CH 80V 169A 2,5mOhm HSOF-8
***et
DIFFERENTIATED MOSFETS
***ineon
OptiMOS 5 80V, Infineons latest generation of power MOSFETs, are especially designed for synchronous rectification in telecom and server power supplies. In addition, these devices can also be utilized in other industrial applications such as solar, low voltage drives and adapters. Within seven different packages, the new OptiMOS 5 80V MOSFETs offer the industrys lowest R DS(on). | Summary of Features: Optimized for synchronous rectification; Ideal for high switching frequency; Output capacitance reduction of up to 44%; R DS(on) reduction of up to 44% | Benefits: Highest system efficiency; Reduced switching and conduction losses; Less paralleling required; Increased power density; Low voltage overshoot | Target Applications: Telecom; Server; Solar; Low voltage drives; Light electric vehicles; Adapter
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Teil # Mfg. Beschreibung Aktie Preis
IPT029N08N5ATMA1
DISTI # V36:1790_16563202
Infineon Technologies AGMV POWER MOS0
  • 2000000:$1.9390
  • 1000000:$1.9400
  • 200000:$2.0450
  • 20000:$2.2080
  • 2000:$2.2340
IPT029N08N5ATMA1
DISTI # V72:2272_16563202
Infineon Technologies AGMV POWER MOS0
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1TR-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 2000
    Container: Tape & Reel (TR)
    On Order
    • 2000:$2.2338
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1CT-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$2.4220
    • 500:$2.8717
    • 100:$3.3734
    • 10:$4.1170
    • 1:$4.5800
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1DKR-ND
    Infineon Technologies AGMV POWER MOS
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$2.4220
    • 500:$2.8717
    • 100:$3.3734
    • 10:$4.1170
    • 1:$4.5800
    IPT029N08N5ATMA1
    DISTI # IPT029N08N5ATMA1
    Infineon Technologies AGDIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPT029N08N5ATMA1)
    RoHS: Compliant
    Min Qty: 2000
    Container: Reel
    Americas - 0
    • 12000:$1.9900
    • 20000:$1.9900
    • 8000:$2.0900
    • 4000:$2.1900
    • 2000:$2.2900
    IPT029N08N5ATMA1
    DISTI # SP001581494
    Infineon Technologies AGDIFFERENTIATED MOSFETS (Alt: SP001581494)
    RoHS: Compliant
    Min Qty: 2000
    Europe - 0
    • 20000:€1.6900
    • 12000:€1.7900
    • 4000:€1.9900
    • 8000:€1.9900
    • 2000:€2.0900
    IPT029N08N5ATMA1
    DISTI # 726-IPT029N08N5ATMA1
    Infineon Technologies AGMOSFET MV POWER MOS
    RoHS: Compliant
    400
    • 1:$4.2300
    • 10:$3.5900
    • 100:$3.1200
    • 250:$2.9600
    • 500:$2.6500
    • 1000:$2.2400
    • 2000:$2.1200
    Bild Teil # Beschreibung
    IPT029N08N5ATMA1

    Mfr.#: IPT029N08N5ATMA1

    OMO.#: OMO-IPT029N08N5ATMA1

    MOSFET MV POWER MOS
    IPT029N08N5

    Mfr.#: IPT029N08N5

    OMO.#: OMO-IPT029N08N5-1190

    N-CH 80V 169A 2,5mOhm HSOF-8
    IPT029N08N5ATMA1

    Mfr.#: IPT029N08N5ATMA1

    OMO.#: OMO-IPT029N08N5ATMA1-INFINEON-TECHNOLOGIES

    MV POWER MOS
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    2500
    Menge eingeben:
    Der aktuelle Preis von IPT029N08N5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
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    ext. Preis
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    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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