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BSC094N06LS5ATMA1

BSC094N06LS5ATMA1
Mfr. #:
BSC094N06LS5ATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC094N06LS5ATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
47 A
Rds On - Drain-Source-Widerstand:
9.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.1 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
7 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
36 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Serie:
OptiMOS 5
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
22 S
Abfallzeit:
3 ns
Produktart:
MOSFET
Anstiegszeit:
3 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
14 ns
Typische Einschaltverzögerungszeit:
4 ns
Teil # Aliase:
BSC094N06LS5 SP001458086
Tags
BSC094, BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package, PG-TDSON-8, RoHS
***ark
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:47A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes
***nell
MOSFET, N-CH, 60V, 47A, 150DEG C, 36W; Transistor Polarity: N Channel; Continuous Drain Current Id: 47A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0077ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 36W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)
***ineon
Infineon's new logic level OptiMOS 5 power MOSFETs are highly suitable for wireless charging, adapter and telecom applications. The new devices' low gate charge (Q g) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (V GS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers. | Summary of Features: Low R DS(on) in small package; Low gate charge; Lower output charge; Logic level compatibility | Benefits: Higher power density designs; Higher switching frequency; Reduced parts count wherever 5V supplies are available; Driven directly from microcontrollers (slow switching); System cost reduction | Target Applications: Wireless charging; Adapter; Telecom
Teil # Mfg. Beschreibung Aktie Preis
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 60V 47A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.4328
BSC094N06LS5ATMA1
DISTI # BSC094N06LS5ATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 8-Pin TDSON EP - Tape and Reel (Alt: BSC094N06LS5ATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.4259
  • 10000:$0.4099
  • 20000:$0.3949
  • 30000:$0.3819
  • 50000:$0.3749
BSC094N06LS5ATMA1
DISTI # 726-BSC094N06LS5ATMA		Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant		0
  • 1:$0.9800
  • 10:$0.8290
  • 100:$0.6360
  • 500:$0.5630
  • 1000:$0.4440
  • 5000:$0.3940
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von BSC094N06LS5ATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,97 $
0,97 $
10
0,83 $
8,29 $
100
0,64 $
63,60 $
500
0,56 $
281,50 $
1000
0,44 $
444,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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