NGTB30N60L2WG

NGTB30N60L2WG
Mfr. #:
NGTB30N60L2WG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors 600V 30A IGBT TO-247
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB30N60L2WG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
NGTB30N60L2WG Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Verpackung:
Rohr
Marke:
ON Semiconductor
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Tags
NGTB30N60, NGTB30N6, NGTB30, NGTB3, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V
***et
Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
***ark
Transistor, Igbt, N-Ch, 600V, 30A, To247
***el Electronic
RES SMD 1.96M OHM 1% 1/8W 0805
***nell
TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 225mW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 600V 95A 330000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***nell
IGBT, 600V, 95A, TO-247AC-3; DC Collector Current: 95A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***et Europe
Trans IGBT Chip N-CH 600V 100A 3-Pin(3+Tab) TO-247AC Tube
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors IR IGBT 600V 600V 48A COPAK-247AC
***(Formerly Allied Electronics)
Transistor IGBT N-ch 600V 60A TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***ical
Trans IGBT Chip N-CH 600V 120A 378000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, AEC-Q101, 600V, TO247AB; DC Collector Current: 120A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 378W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AB; No.
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors 600V, 40A FIELD STOP IGBT
***i-Key
IGBT FIELD STOP 600V 80A TO247-3
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
NGTB 25-75A Insulated Gate Bipolar Transistors
ON Semiconductor NGTB 25-75A Insulated Gate Bipolar Transistors feature a robust and cost effective Trench construction. They provide superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. These IGBTs are well suited for welding applications. Incorporated into the device is a soft and fast co−packaged  free wheeling diode with a low forward voltage.Learn More
Teil # Mfg. Beschreibung Aktie Preis
NGTB30N60L2WG
DISTI # NGTB30N60L2WG-ND
ON SemiconductorIGBT 600V 30A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube
On Order
  • 1020:$2.5431
  • 510:$3.0154
  • 120:$3.5422
  • 30:$4.0870
  • 1:$4.8100
NGTB30N60L2WG
DISTI # NGTB30N60L2WG
ON SemiconductorTrans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB30N60L2WG)
RoHS: Compliant
Min Qty: 180
Container: Tube
Americas - 0
  • 180:$2.1900
  • 240:$2.1900
  • 420:$2.1900
  • 900:$2.0900
  • 1800:$2.0900
NGTB30N60L2WG
DISTI # 31AC0874
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247,DC Collector Current:30A,Collector Emitter Saturation Voltage Vce(on):1.4V,Power Dissipation Pd:225mW,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of , RoHS Compliant: Yes65
  • 1:$4.5800
  • 10:$3.9000
  • 25:$3.7300
  • 50:$3.5500
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
NGTB30N60L2WG
DISTI # 863-NGTB30N60L2WG
ON SemiconductorIGBT Transistors 600V 30A IGBT TO-247
RoHS: Compliant
550
  • 1:$4.5800
  • 10:$3.9000
  • 100:$3.3800
  • 250:$3.2100
  • 500:$2.8800
  • 1000:$2.4300
  • 2500:$2.3100
NGTB30N60L2WG
DISTI # 2774810
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant
65
  • 1:$7.1600
  • 10:$6.2400
  • 100:$5.4100
  • 250:$4.8700
  • 500:$4.2700
  • 1000:$3.8600
NGTB30N60L2WG
DISTI # 2774810
ON SemiconductorTRANSISTOR, IGBT, N-CH, 600V, 30A, TO247
RoHS: Compliant
65
  • 1:£3.8600
  • 10:£2.9500
  • 100:£2.5500
  • 250:£2.4300
  • 500:£2.1800
Bild Teil # Beschreibung
SN74HC193DR

Mfr.#: SN74HC193DR

OMO.#: OMO-SN74HC193DR

Counter ICs 4-Bit Sync Up/Down
TLC274CDR

Mfr.#: TLC274CDR

OMO.#: OMO-TLC274CDR

Precision Amplifiers Quad Precision
IRLR2905ZTRPBF

Mfr.#: IRLR2905ZTRPBF

OMO.#: OMO-IRLR2905ZTRPBF

MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
HCPL0601

Mfr.#: HCPL0601

OMO.#: OMO-HCPL0601

High Speed Optocouplers 10MBit Optocoupler HS Logic Gate
74HC4051D(BJ)

Mfr.#: 74HC4051D(BJ)

OMO.#: OMO-74HC4051D-BJ-

Encoders, Decoders, Multiplexers & Demultiplexers CMOS logic IC series
74HC04D(BJ)

Mfr.#: 74HC04D(BJ)

OMO.#: OMO-74HC04D-BJ-

Inverters CMOS logic IC series
FL5150MX

Mfr.#: FL5150MX

OMO.#: OMO-FL5150MX

Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntroller
TDA3681JR/N2S

Mfr.#: TDA3681JR/N2S

OMO.#: OMO-TDA3681JR-N2S

LDO Voltage Regulators MULT VLTG REGULATOR SWITCH/IGNITION BUFF
IRLR2905ZTRPBF

Mfr.#: IRLR2905ZTRPBF

OMO.#: OMO-IRLR2905ZTRPBF-INFINEON-TECHNOLOGIES

MOSFET N-CH 55V 42A DPAK
HCPL0601

Mfr.#: HCPL0601

OMO.#: OMO-HCPL0601-ON-SEMICONDUCTOR

OPTOISO 3.75KV OPN COLLECTOR 8SO
Verfügbarkeit
Aktie:
549
Auf Bestellung:
2532
Menge eingeben:
Der aktuelle Preis von NGTB30N60L2WG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
4,58 $
4,58 $
10
3,90 $
39,00 $
100
3,38 $
338,00 $
250
3,21 $
802,50 $
500
2,88 $
1 440,00 $
1000
2,43 $
2 430,00 $
2500
2,31 $
5 775,00 $
5000
2,22 $
11 100,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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