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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| IRFS254BFP001 | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Not Compliant | 7200 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: IRFS250 OMO.#: OMO-IRFS250-1190 |
Neu und Original |
|
|
Mfr.#: IRFS250B OMO.#: OMO-IRFS250B-1190 |
Power Field-Effect Transistor, 21.3A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: IRFS250BFP001 OMO.#: OMO-IRFS250BFP001-1190 |
Neu und Original |
|
|
Mfr.#: IRFS254BFP001 OMO.#: OMO-IRFS254BFP001-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
