BUP213

BUP213
Mfr. #:
BUP213
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors IGBT CHIP NPT TECH 1200V 15A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUP213 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUP213 DatasheetBUP213 Datasheet (P4-P6)BUP213 Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-220-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1200 V
Maximale Gate-Emitter-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
32 A
Höhe:
9.25 mm
Länge:
10 mm
Breite:
4.4 mm
Marke:
Infineon-Technologien
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
500
Unterkategorie:
IGBTs
Gewichtseinheit:
0.211644 oz
Tags
BUP21, BUP2, BUP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
***ark
; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:32A; Collector Emitter Saturation Voltage, Vce(sat):2.7V; Power Dissipation, Pd:200W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***nell
IGBT, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:1200V; Current Ic Continuous a Max:32A; Voltage, Vce Sat Max:2.7V; Power Dissipation:200W; Case Style:TO-220AB; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:64A; Device Marking:BUP213; No. of Pins:3; Pin Format:GCE; Power, Pd:200W; Power, Ptot:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:95ns; Time, Rise:70ns; Transistors, No. of:1
Teil # Mfg. Beschreibung Aktie Preis
BUP213
DISTI # BUP213IN-ND
Infineon Technologies AGIGBT 1200V 32A 200W TO220
RoHS: Not compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
    BUP213
    DISTI # 726-BUP213
    Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
    RoHS: Compliant
    0
      BUP213 E3045A
      DISTI # 726-BUP213E3045A
      Infineon Technologies AGIGBT Transistors IGBT CHIP NPT TECH 1200V 15A
      RoHS: Compliant
      0
        BUP213Infineon Technologies AGInsulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
        RoHS: Not Compliant
        1634
          Bild Teil # Beschreibung
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von BUP213 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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